Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 2 1Publication Order Number:
BCW65ALT1/D
BCW65ALT1
General Purpose Transistor
NPN Silicon
Features
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 32 Vdc
Collector−Base Voltage VCBO 60 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC800 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
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EA = Specific Device Code
M = Date Code
MARKING DIAGRAM
12
3
Device Package Shipping†
ORDERING INFORMATION
BCW65ALT1 SOT−23 3000 / Tape & Reel
BCW65ALT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
EA M
3000 / Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
BCW65ALT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO 32 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 Adc, VEB = 0) V(BR)CES 60 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES −
−−
−20
20 nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO − − 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 Adc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 35
75
100
35
−
−
−
−
−
220
250
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) −
−0.7
0.3 −
−
Vdc
Base−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − − 2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
SWITCHING CHARACTERISTICS
T urn−On Time
(IB1 = IB2 = 15 mAdc) ton − − 100 ns
Turn−Off Time
(IC = 150 mAdc, RL = 150 )toff − − 400 ns
BCW65ALT1
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3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AJ
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
BCW65ALT1
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4
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5773−3850
BCW65ALT1/D
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