DRDNB21D COMPLEX ARRAY FOR DUAL RELAY DRIVER Features and Benefits Mechanical Data * * * * * * * * Epitaxial Planar Die Construction Two Pre-Biased Transistors and Two Switching Diodes, Internally Connected in One Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0062 grams (approximate) * * * * R1 = R3 = 2.2k (nominal) R2 = R4 = 47k (nominal) 6 4 5 5 D1 R1 R3 D2 1 3 R1 R2 R3 Q1 6 R4 Q2 R2 1 4 R4 3 2 2 Top View Top View Device Circuit Ordering Information (Note 3) Device DRDNB21D-7 Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.s "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, visit our website at http://www.diodes.com. Marking Information Date Code Key Year 2005 Code S Month Code Jan 1 2006 T Feb 2 DRDNB21D Document number: DS30756 Rev. 6 - 2 2007 U Mar 3 2008 V Apr 4 RD08 = Product Type Marking Code YM = Date Code Marking Y = Year (e.g. T = 2006) M = Month (e.g. 1 = January) YM RD08 2009 W May 5 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 7 www.diodes.com February 2011 (c) Diodes Incorporated DRDNB21D Maximum Ratings, Total Device @TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Junction Temperature Range Symbol PD RJA TJ, TSTG Value 200 625 -55 to +150 Unit mW C/W C Maximum Ratings, Pre-Biased NPN Transistor @TA = 25C unless otherwise specified Characteristic Collector-Emitter Voltage Base-Emitter Voltage Output Current Peak Collector Current Symbol VCC Vin IO ICM Value 50 -5 to +12 100 100 Unit V V mA mA Value 100 Unit V 75 V 53 500 250 4.0 1.0 V mA mA Maximum Ratings, Switching Diode @TA = 25C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Symbol VRM VRRM VRWM VR VR(RMS) IFM IO Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 4) Average Rectified Output Current (Note 4) Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0s IFSM A Electrical Characteristics, Pre-Biased NPN Transistor @TA = 25C unless otherwise specified Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl R1 R2/R1 fT Min 0.5 80 -30 -20 Typ 250 Max 1.1 0.3 3.6 0.5 +30 +20 Unit V V V mA uA % % MHz Test Condition VCC = 5V, IO = 100A VO = 0.3V, IO = 5mA IO/Il = 50mA/0.25mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz Transistor - For Reference Only Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 5) Forward Voltage @TA = 25C unless otherwise specified Symbol V(BR)R Min 75 Max Unit V VF 0.62 0.72 0.855 1.0 1.25 V A A A nA pF ns Reverse Current (Note 5) IR 2.5 50 30 25 Total Capacitance Reverse Recovery Time CT trr 4.0 4.0 Notes: Test Condition IR = 10A IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, TJ = 150C VR = 25V, TJ = 150C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com 5. Short duration pulse test used to minimize self-heating effect. DRDNB21D Document number: DS30756 Rev. 6 - 2 2 of 7 www.diodes.com February 2011 (c) Diodes Incorporated DRDNB21D Device Characteristics PD, POWER DISSIPATION (mW) 250 Note 4 200 150 100 50 0 120 40 80 160 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve (Total Device) 0 Pre-Biased NPN Transistor Elements 1,000 1 0.1 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 75 C TA = -25C TA = 25C 0.01 0.001 0 10 40 20 30 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical VCE(SAT) vs. IC DRDNB21D Document number: DS30756 Rev. 6 - 2 50 3 of 7 www.diodes.com 100 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain 100 February 2011 (c) Diodes Incorporated DRDNB21D Pre-Biased NPN Transistor Elements - continued IC, COLLECTOR CURRENT (mA) 100 10 Vin, INPUT VOLTAGE (V) 10 1 0.1 1 0.01 0.001 0 1 8 9 10 6 7 3 4 5 Vin, INPUT VOLTAGE (V) Fig. 4 Typical Collector Current vs. Input Voltage 2 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Input Voltage vs. Collector Current 4 COB, CAPACITANCE (pF) IE = 0mA f = 1MHz 3 2 1 0 0 10 15 25 20 5 VR, REVERSE BIAS VOLTAGE (V) Fig. 6 Typical Output Capacitance DRDNB21D Document number: DS30756 Rev. 6 - 2 30 4 of 7 www.diodes.com February 2011 (c) Diodes Incorporated DRDNB21D 10,000 1,000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Switching Diode Elements 100 10 1 0.1 0 1,000 1.2 0.4 0.8 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 7 Typical Forward Characteristics 100 10 1 0.1 0 60 80 20 40 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Reverse Characteristics 100 3.0 CT, TOTAL CAPACITANCE (pF) f = 1MHz 2.5 2.0 1.5 1.0 0.5 0 0 10 20 40 30 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance vs. Reverse Voltage Typical Application Circuit L1 Relay1 D1 RL1 Typical Application Circuit DRDNB21D with two independent relays. DRDNB21D Document number: DS30756 Rev. 6 - 2 5 of 7 www.diodes.com February 2011 (c) Diodes Incorporated DRDNB21D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DRDNB21D Document number: DS30756 Rev. 6 - 2 6 of 7 www.diodes.com February 2011 (c) Diodes Incorporated DRDNB21D IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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