DRDNB21D
Document number: DS30756 Rev. 6 - 2 1 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
COMPLEX ARRAY FOR DUAL RELAY DRIVER
Features and Benefits
• Epitaxial Planar Die Construction
• Two Pre-Biased Transistors and Two Switching Diodes,
Internally Connected in One Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
R1 = R3 = 2.2kΩ (nominal)
R2 = R4 = 47kΩ (nominal)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0062 grams (approximate)
Ordering Information (Note 3)
Device Packaging Shipping
DRDNB21D-7 SOT-363 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, visit our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Top View
RD08 = Product Type Marking Code
YM = Date Code Marking
Y = Year (e.g. T = 2006)
M = Month (e.g. 1 = January)
1 3
2
6 5 4
R4
R3
R2
R1
1
2
3
4
5
6
D1 D2
Q1 Q2
R2 R4
R3R1
Device Circuit
RD08
YM
DRDNB21D
Document number: DS30756 Rev. 6 - 2 2 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 200 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R
θ
JA 625 °C/W
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCC 50 V
Base-Emitter Voltage Vin -5 to +12 V
Output Current IO 100 mA
Peak Collector Current ICM 100 mA
Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 75 V
RMS Reverse Voltage VR
(
RMS
)
53 V
Forward Continuous Current (Note 4) IFM 500 mA
Average Rectified Output Current (Note 4) IO 250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μ
s
@ t = 1.0s IFSM 4.0
1.0 A
Electrical Characteristics, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage Vl
(
off
)
0.5 ⎯ ⎯ V VCC = 5V, IO = 100μA
Vl
(
on
)
⎯ ⎯ 1.1 V
VO = 0.3V, IO = 5mA
Output Voltage VO
(
on
)
⎯ ⎯ 0.3 V
IO/Il = 50mA/0.25mA
Input Current Il ⎯ ⎯ 3.6 mA
VI = 5V
Output Current IO
(
off
)
⎯ ⎯ 0.5 uA
VCC = 50V, VI = 0V
DC Current Gain Gl 80 ⎯ ⎯ ⎯ VO = 5V, IO = 10mA
Input Resistor Tolerance
Δ
R1 -30 ⎯+30 % -
Resistance Ratio Tolerance
Δ
R2/R1 -20 ⎯ +20 % -
Gain-Bandwidth Product* fT ⎯ 250 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V(BR)R 75 ⎯ V IR = 10μA
Forward Voltage VF
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 5) IR ⎯
2.5
50
30
25
μA
μA
μA
nA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
Total Capacitance CT ⎯ 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.
DRDNB21D
Document number: DS30756 Rev. 6 - 2 3 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
Device Characteristics
0
50
100
120 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Derating Curve (Total Device)
A
150
200
250
0
Note 4
1608040
Pre-Biased NPN Transistor Elements
0.001
0.01
0.1
1
010 20 30 40 50
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA TION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical V vs. I
C
CE(SAT) C
I/I = 10
CB
T = -25C
A
°
T = 75C
A
°
T = 25C
A
°
10
1,000
100
110100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 T y pical DC Current Gain
C
DRDNB21D
Document number: DS30756 Rev. 6 - 2 4 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
Pre-Biased NPN Transistor Elements - continued
0.001
0.01
1
10
100
01234 8910
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(mA)
C
V , INPUT VOLT AGE (V)
Fig. 4 Typical Collector Current vs. Input V oltage
in
567
0.1
0.1
1
10
01020304050
I , COLLECTOR CURRENT (mA)
Fig . 5 Typic al In put Volt age vs. Collector Current
C
V , INPUT VOLTAGE (V)
in
0
1
2
3
4
020 30
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
OB
V , REVERSE BIAS VOLTAGE (V)
Fig. 6 T ypical Output Capacitance
R
10
515 25
I = 0mA
f = 1MHz
E
DRDNB21D
Document number: DS30756 Rev. 6 - 2 5 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
Switching Diode Elements
10
100
1,000
1
0.1 01.6
1.2
0.4 0.8
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , IN STAN TANE OUS F O RWA RD VOL TAG E (V)
Fig. 7 Ty pical Forward C haract er istics
F
0.1
1
10
100
1,000
10,000
020 40 60 80 100
V , REVERSE VOL TAGE (V)
Fig. 8 T ypical Reverse Characteristics
R
I, INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(nA)
R
0
0.5
1.0
2.5
2.0
1.5
3.0
01020 40
30
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
V , REVERSE VOL TAGE (V)
Fig. 9 T ypical Capacitance vs. Reverse Voltage
R
f = 1MHz
Typical Application Circuit
Typical Application Circuit DRDNB21D with two independent relays.
L1
Relay1
D1
RL1
DRDNB21D
Document number: DS30756 Rev. 6 - 2 6 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
Package Outline Dimensions
Suggested Pad Layout
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
DRDNB21D
Document number: DS30756 Rev. 6 - 2 7 of 7
www.diodes.com February 2011
© Diodes Incorporated
DRDNB21D
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
