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FGA30T65SHD Rev. C0

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

December 2014

Absolute Maximum Ratings

Symbol Description FGA30T65SHD Unit

VCES Collector to Emitter Voltage 650 V

VGES

Gate to Emitter Voltage  20 V

Transient Gate to Emitter Voltage  30 V

IC

Collector Current @ TC = 25oC 60 A

Collector Current @ TC = 100oC 30 A

ILM (1) Pulsed Collector Current @ TC = 25oC 90 A

ICM (2) Pulsed Collector Current 90 A

IF

Diode Forward Current @ TC = 25oC 40 A

Diode Forward Current @ TC = 100oC 20 A

IFM (2) Pulsed Diode Maximum Forward Current 90 A

PD

Maximum Power Dissipation @ TC = 25oC 238 W

Maximum Power Dissipation @ TC = 100oC119 W

TJ Operating Junction Temperature -55 to +175 oC

Tstg Storage Temperature Range -55 to +175 oC

TL

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

TC = 25°C unless otherwise noted

Notes:

1. VCC = 400 V, VGE = 15 V, IC =90 A, RG = 30  Inductive Load

2. Repetitive rating: Pulse width limited by max. junction temperature

FGA30T65SHD

650 V, 30 A Field Stop Trench IGBT

Features

• Maximum Junction Temperature : TJ =175oC

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A

• 100% of the Parts Tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

General Description

G

E

C

TO-3PN

GCE

Using novel field stop IGBT technology, Fairchild’s new series of

field stop 3rd generation IGBTs offer the optimum performance

for solar inverter, UPS, welder, telecom, ESS and PFC applica-

tions where low conduction and switching losses are essential.

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Thermal Characteristics

Symbol Parameter FGA30T65SHD Unit

RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.63 oC/W

RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W

RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W

Package Marking and Ordering Information

Part Number Top Mark Package Packaging Method Reel Size Tape Width Quantity

FGA30T65SHD FGA30T65SHD TO-3PN Tube - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA 650 - - V

BVCES /

TJ

Temperature Coefficient of Breakdown

Voltage IC = 1 mA, Reference to 25oC- 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A

IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 30 mA, VCE = VGE 4.0 5.5 7.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 30 A, VGE = 15 V - 1.6 2.1 V

IC = 30 A, VGE = 15 V,

TC = 175oC- 2.14 - V

Dynamic Characteristics

Cies Input Capacitance

VCE = 30 V, VGE = 0 V,

f = 1MHz

- 1558 - pF

Coes Output Capacitance - 64 - pF

Cres Reverse Transfer Capacitance - 19 - pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400 V, IC = 30 A,

RG = 6 , VGE = 15 V,

Inductive Load, TC = 25oC

- 14.4 - ns

trRise Time - 16 - ns

td(off) Turn-Off Delay Time - 52.8 - ns

tfFall Time - 9.6 - ns

Eon Turn-On Switching Loss - 598 - uJ

Eoff Turn-Off Switching Loss - 167 - uJ

Ets Total Switching Loss - 765 - uJ

td(on) Turn-On Delay Time

VCC = 400 V, IC = 30 A,

RG = 6 , VGE = 15 V,

Inductive Load, TC = 175oC

- 14.4 - ns

trRise Time - 19.2 - ns

td(off) Turn-Off Delay Time - 59.2 - ns

tfFall Time - 8 - ns

Eon Turn-On Switching Loss - 992 - uJ

Eoff Turn-Off Switching Loss - 303 - uJ

Ets Total Switching Loss - 1295 - uJ

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

QgTotal Gate Charge

VCE = 400 V, IC = 30 A,

VGE = 15 V

- 54.7 - nC

Qge Gate to Emitter Charge - 9.6 - nC

Qgc Gate to Collector Charge - 20.3 - nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

VFM Diode Forward Voltage IF = 20 A TC = 25oC - 2.2 2.7 V

TC = 175oC - 1.94 -

Erec Reverse Recovery Energy

IF =20 A, dIF/dt = 200 A/s

TC = 175oC - 50 - uJ

trr Diode Reverse Recovery Time TC = 25oC - 31.8 - ns

TC = 175oC - 192 -

Qrr Diode Reverse Recovery Charge TC = 25oC - 50.6 - nC

TC = 175oC - 699 -

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.

Gate Resistance Collector Current

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.

Collector Current Collector Current

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT

FGA30T65SHD Rev. C0

Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21.Transient Thermal Impedance of IGBT

Figure 22.Transient Thermal Impedance of Diode

t

1

P

DM

t

2

t

1

P

DM

t

2

R

0.50

16.20

15.40

5.20

4.80

20.10

19.70

2.20

1.80

3.70

3.30

3.20

2.80

1.20

0.80

5.45 5.45

18.90

18.50

1.85

0.55

M

1.65

1.45

R

0.50

5.00

4.60

2.60

2.20

0.75

0.55

2.00

1.60

3° 4°

3°

3.30

3.10

7.20

6.80

13.80

13.40

16.96

16.56

20.30

19.70

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO EIAJ

SC-65 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSION AND TOLERANCING PER

ASME14.5-2009.

D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSSIONS.

E) DRAWING FILE NAME:

TO3PN03AREV2.

F) FAIRCHILD SEMICONDUCTOR.

13

www.onsemi.com

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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