This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3931G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Package * Optimum for RF amplification of FM/AM radios * High transition frequency fT * S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing * Code SMini3-F2 * Marking Symbol: U * Pin Name 1. Base 2. Emitter 3. Collector d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Features Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Symbol Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 30 V VEBO IE = 10 A, IC = 0 3 V VBE VCB = 6 V, IE = -1 mA hFE VCB = 6 V, IE = -1 mA 65 450 on tin Emitter-base voltage (Collector open) ue Parameter Di sc Base-emitter voltage Forward current transfer ratio * Conditions Min Typ Max 720 Unit mV 260 VCB = 6 V, IE = -1 mA, f = 200 MHz Cre VCB = 6 V, IE = -1 mA, f = 10.7 MHz 0.8 Power gain GP VCB = 6 V, IE = -1 mA, f = 100 MHz 24 dB NF VCB = 6 V, IE = -1 mA, f = 100 MHz 3.3 dB M ain te na nc Transition frequency e/ fT Common-emitter reverse transfer capacitance Noise figure 650 MHz 1.0 pF Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank C D hFE 65 to 160 100 to 260 Publication date: April 2007 SJC00358AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3931G PC Ta IC VCE Ta = 25C 10 Collector current IC (mA) Collector current IC (mA) 120 VCE = 6 V Ta = 25C IB = 100 A 10 160 12 80 A 8 60 A 8 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) IC I B 12 200 80 40 0 40 80 120 160 Collector-emitter saturation voltage VCE(sat) (V) VCE = 6 V Ta = 75C -25C 15 10 5 0 0.4 0.8 6 12 0 18 0 60 1.2 1.6 2.0 1 25C 0.1 Ta = 75C -25C 0.01 0.1 1 10 180 hFE IC 360 IC / IB = 10 10 300 240 180 120 Ta = 75C 25C -25C 60 0 0.1 100 VCE = 6 V Collector current IC (mA) 1 10 100 Collector current IC (mA) nc 400 200 0 - 0.1 -1 -10 Emitter current IE (mA) 2 100 80 60 Pl 600 Cre VCE VCB = 6 V f = 2 MHz Ta = 25C -100 40 20 0 - 0.1 -1 Emitter current IE (mA) SJC00358AED -10 Common-emitter reverse transfer capacitance Cre (pF) 800 te na 1 000 M ain Transition frequency fT (MHz) e/ VCB = 6 V Ta = 25C Zrb IE 120 Reverse transfer impedance Zrb () Di sc fT I E 1 200 on tin ue Base-emitter voltage VBE (V) 100 120 Base current IB (A) VCE(sat) IC 25C 20 0 Collector-emitter voltage VCE (V) IC VBE 25 4 2 Forward current transfer ratio hFE 0 30 Collector current IC (mA) 20 A 2 Ambient temperature Ta (C) 0 40 A 4 6 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 6 2.4 2.0 IC = 1 mA f = 10.7 MHz Ta = 25C 1.6 1.2 0.8 0.4 0 0.1 1 10 100 Collector-emitter voltage VCE (V) This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3931G GP IE f = 100 MHz Rg = 50 Ta = 25C Power gain GP (dB) 30 0.8 12 VCE = 10 V 6V f = 100 MHz Rg = 50 k Ta = 25C 10 Noise figure NF (dB) 1.0 NF IE 40 IE = 0 f = 1 MHz Ta = 25C 8 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 1.2 0.6 0.4 6 VCE = 6 V, 10 V 4 10 5 10 15 20 25 0 - 0.1 30 Reverse transfer susceptance bre (mS) 150 100 -7 mA IE = - 0.5 mA -1 mA 100 8 58 58 25 4 25 f = 10.7 MHz 0 0 3 6 -1 9 12 -4 mA -1 mA 58 IE = -7 mA -3 -4 100 -5 -20 -40 -1 mA 10.7 150 -2 mA -4 mA 150 -60 58 100 100 f = 150 MHz - 0.4 - 0.3 - 0.2 - 0.1 0 Reverse transfer conductance gre (mS) 58 f = 150 MHz IE = -7 mA 100 -80 -120 0 20 yfe = gfe + jbfe VCE = 10 V 40 60 80 100 Forward transfer conductance gfe (mS) on tin ue bfe gfe -100 -6 - 0.5 15 Input conductance gie (mS) -1 -2 -100 0 10.7 25 yre = gre + jbre VCE = 10 V -10 Emitter current IE (mA) bre gre -4 mA -2 mA 0 - 0.1 -100 0 yie = gie + jbie VCE = 10 V 16 12 -10 Emitter current IE (mA) bie gie 20 -1 - 0.4 mA 0 Forward transfer susceptance bfe (mS) 0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 2 0.2 Collector-base voltage VCB (V) Input susceptance bie (mS) 20 e/ IE = - 0.5 mA -1 mA nc -4 mA M ain 0.8 150 -2 mA te na 1.0 100 -7 mA 0.6 58 Pl Output susceptance boe (mS) Di sc boe goe 1.2 0.4 25 0.2 f = 10.7 MHz 0 0 0.1 0.2 yoe = goe + jboe VCE = 10 V 0.3 0.4 0.5 Output conductance goe (mS) SJC00358AED 3 1.25 0.10 1 (0.65) 0.050 +0.05 3 2 (0.65) 0.13 -0.02 +0.05 1.30 0.10 0 to 0.10 0.10 0.10 pla in ea 0.90 2.10 ne clu se d pla m d m es f ht visi n a a o tp t f e :// ol d d d inte inte llow ww lo is is na n i(5) w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P 0.425 ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy n s cle i (0.49) c.c t in o. for sta jp/ m ge en at . / ion . ed inu 0.30 -0.02 (0.89) on t (5) Di sc ce / en an 2.00 0.20 Pl ain t M M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.