SZMMBZ15VDLT1G - ON Semiconductor L.L.C.

May, 2012 − Rev. 12

1Publication Order Number:

MMBZ15VDLT1/D

MMBZ15VDLT1G,

MMBZ27VCLT1G,

SZMMBZ15VDLT1G,

SZMMBZ27VCLT1G

40 Watt Peak Power

Zener Transient Voltage

Suppressors

SOT−23 Dual Common Cathode Zeners

for ESD Protection

These dual monolithic silicon zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

cathode design protects two separate lines using only one package.

These devices are ideal for situations where board space is at a

premium.

The MMBZ27VCLT1G/SZMMBZ27VCLT1G can be used to

protect a single wire communication network form EMI and ESD

transient surge voltages.

The MMBZ27VCLT1G/SZMMBZ27VCLT1G is recommended by

the Society of Automotive Engineers (SAE), February 2000, J2411

“Single Wire Can Network for Vehicle Applications” specification as

a solution for transient voltage problems.

Specification Features:

•SOT−23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

•Working Peak Reverse Voltage Range − 12.8 V, 22 V

•Standard Zener Breakdown Voltage Range − 15 V, 27 V

•Peak Power − 40 W @ 1.0 ms (Bidirectional),

per Figure 5 Waveform

•ESD Rating of Class 3B (exceeding 16 kV) per the Human

Body Model

•Low Leakage < 100 nA

•Flammability Rating: UL 94 V−O

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•Pb−Free Packages are Available*

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−23

CASE 318

STYLE 9

ANODE 1

3 CATHODE

ANODE 2

Device Package Shipping†

ORDERING INFORMATION

MARKING DIAGRAM

XXX = 15D or 27C

M = Date Code

G= Pb−Free Package

XXX MG

MMBZ15VDLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

MMBZ15VDLT3G SOT−23

(Pb−Free)

10,000 /

Tape & Reel

MMBZ27VCLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SZMMBZ15VDLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SZMMBZ15VDLT3G SOT−23

(Pb−Free)

10,000 /

Tape & Reel

SZMMBZ27VCLT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

(Note: Microdot may be in either location)

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Ppk 40 Watts

Total Power Dissipation on FR−5 Board (Note 2)

@ TA = 25°C

Derate above 25°C

°PD°

225

1.8

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 556 °C/W

Total Power Dissipation on Alumina Substrate (Note 3)

@ TA = 25°C

Derate above 25°C

°PD°

300

2.4

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

VBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IFUni−Directional TVS

IPP

VRWM

VCVBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 0.9 V Max @ IF = 10 mA)

Device*

Device

Marking

VRWM IR @ VRWM

Breakdown Voltage VC @ IPP (Note 5)

VBR

VBR (Note 4) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

MMBZ15VDLT1G/T3G 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12

(VF = 1.1 V Max @ IF = 200 mA)

Device*

Device

Marking

VRWM IR @ VRWM

Breakdown Voltage VC @ IPP (Note 5)

VBR

VBR (Note 4) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 38 1.0 26

4. VBR measured at pulse test current IT at an ambient temperature of 25°C.

5. Surge current waveform per Figure 5 and derate per Figure 6

*Include SZ-prefix devices where applicable.

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G

http://onsemi.com

-40 +85

BREAKDOWN VOLTAGE (VOLTS)

Figure 1. Typical Breakdown Voltage

versus Temperature

TEMPERATURE (°C)

+125

(VBR @ I T)

+25

MMBZ15VDLT1G, SZMMBZ15VDLT1G

-55 +85

BREAKDOWN VOLTAGE (VOLTS)

Figure 2. Typical Breakdown Voltage

versus Temperature

TEMPERATURE (°C)

+125

(VBR @ I T)

+25

MMBZ27VCLT1G, SZMMBZ27VCLT1G

TYPICAL CHARACTERISTICS

BIDIRECTIONAL

UNIDIRECTIONAL

BIDIRECTIONAL

1000

0.01

TEMPERATURE (°C)

IR(nA)

Figure 3. Typical Leakage Current

versus Temperature

100

0.1

-40 +85 +125+25 0 25 50 75 100 125 150 175

300

250

200

150

100

Figure 4. Steady State Power Derating Curve

PD, POWER DISSIPATION (mW)

TEMPERATURE (°C)

FR-5 BOARD

ALUMINA SUBSTRATE

VALUE (%)

100

001234

t, TIME (ms)

Figure 5. Pulse Waveform

tr ≤ 10 ms

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAYS TO

50% OF IPP

HALF VALUE— IPP

PEAK VALUE—IPP

100

00 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (°C)

Figure 6. Pulse Derating Curve

PEAK PULSE DERATING IN % OF PEAK POWER

OR CURRENT @ TA= 25 C

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G

http://onsemi.com

TYPICAL APPLICATIONS

Figure 7. Single Wire CAN Network

ECU Connector

220 pF 10% GND

Single Wire

CAN Transceiver

CLoad Load

RLoad

9.09 kW 1%

Loss of

Ground

Protection

Circuit

VBatt

47 mHBus

*ESD Protection − MMBZ27VCLT1G or equivalent. May be

located in each ECU (CLoad needs to be reduced accordingly)

or at a central point near the DLC.

Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the

Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification

(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common

cathode zener configuration.

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

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MMBZ15VDLT1/D

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