APTGT35X120RTP3 APTGT35X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT(R) Power Module VCES = 1200V IC = 35A @ Tc = 80C Application * AC Motor control Features Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring * * * * * APTGT35X120RTP3: Without Brake (Pin 7 & 14 not connected) 21 20 19 18 17 16 15 14 13 12 11 10 Benefits 22 9 8 23 7 24 1 2 3 4 5 6 * * * * * * * * Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80C Tj = 25C Max ratings 1600 80 320 Tj = 150C 260 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-4 APTGT35X120BTP3 - Rev 1 December, 2003 All ratings @ Tj = 25C unless otherwise specified APTGT35X120RTP3 APTGT35X120BTP3 Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD IF Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD RBSOA IF IFRM TC = 25C TC = 80C Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol IR VF RthJC TC = 25C TC = 80C TC = 25C Characteristic Reverse Current Forward Voltage Junction to Case TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C TC = 80C tp = 1ms Test Conditions VR = 1600V Tj = 150C Tj = 150C IF = 50A IGBT Brake & Diode (only for APTGT35X120BTP3) Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Cies Coes Cres Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance VF Forward Voltage RthJC Junction to Case Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25C VGE = 0V IF = 35A Tj = 125C IGBT Diode APT website - http://www.advancedpower.com Max ratings 1200 40 25 65 20 160 15 Unit V Max ratings 1200 55 35 80 20 200 80A @ 1100V 35 50 Unit V Min Typ 3 1.0 Min Typ 1.4 1.7 2.0 5.8 5.0 1808 95 82 2.3 2.5 A V W A A V W A Max Unit mA V 0.65 C/W Max 4 2.1 Unit mA 6.5 600 V nA V pF 2.7 0.6 1.5 V C/W 2-4 APTGT35X120BTP3 - Rev 1 December, 2003 IGBT & Diode Brake (only for APTGT35X120BTP3) Absolute maximum ratings APTGT35X120RTP3 APTGT35X120BTP3 IGBT & Diode Inverter Electrical Characteristics VCE(on) Collector Emitter on Voltage VGE(th) IGES Cies Coss Crss Td(on) Tr Td(off) Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy VF Forward Voltage Qrr Reverse Recovery Charge RthJC Test Conditions VGE = 0V, IC = 3mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 40A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 40A RG = 27 VGE = 0V IF = 40A IF = 25A VR = 600V di/dt=990A/s Min 1200 5.0 Typ 1.8 2.1 5.8 Tj = 25C Tj = 125C Tj = 25C Tj = 125C 5 Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K RT = R25 exp B25 / 50 1 1 - T25 T 6.5 600 Unit V mA V V nA pF ns 65 90 45 520 90 4.2 2.1 2.0 2 Temperature sensor NTC 4 2.2 2530 132 115 85 30 420 IGBT Diode Junction to Case Max ns mJ V C 0.6 0.95 C/W Min Typ 5 3375 Max Unit k K Min Typ Max Unit T: Thermistor temperature RT: Thermistor value at T 3. Thermal and package characteristics Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 2500 M5 APT website - http://www.advancedpower.com -40 -40 -40 V 150 125 125 3.3 300 C N.m g 3-4 APTGT35X120BTP3 - Rev 1 December, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current APTGT35X120RTP3 APTGT35X120BTP3 4. Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 4-4 APTGT35X120BTP3 - Rev 1 December, 2003 PIN 24