PD - 96255 IRF7316GPbF HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free Halogen-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage TA = 25C TA = 70C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS V GS -30 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 -2.8 0.20 -5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient www.irf.com Symbol Limit Units RJA 62.5 C/W 1 07/10/09 IRF7316GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 Typ. Max. Units Conditions V V GS = 0V, ID = -250A 0.022 V/C Reference to 25C, ID = -1mA 0.042 0.058 V GS = -10V, ID = -4.9A 0.076 0.098 V GS = -4.5V, ID = -3.6A V V DS = V GS, ID = -250A 7.7 S V DS = -15V, I D = -4.9A -1.0 V DS = -24V, VGS = 0V A -25 V DS = -24V, VGS = 0V, TJ = 55C 100 V GS = -20V nA -100 V GS = 20V 23 34 I D = -4.9A 3.8 5.7 nC V DS = -15V 5.9 8.9 V GS = -10V, See Fig. 10 13 19 V DD = -15V 13 20 I D = -1.0A ns 34 51 R G = 6.0 32 48 R D = 15 710 V GS = 0V 380 pF V DS = -25V 180 = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -30 A -0.78 -1.0 44 66 42 63 V ns nC Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, IS = -1.7A, VGS = 0V TJ = 25C, IF = -1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. www.irf.com ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. 2 IRF7316GPbF 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 -VDS, Drain-to-Source Voltage (V) 1 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6.0 A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF7316GPbF -4.9A ID =-4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 VGS = -10V 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( C) 10 20 300 I D = -4.9A 0.04 0.00 3 6 9 12 -VGS , Gate -to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage www.irf.com 15 A EAS , Single Pulse Avalanche Energy (mJ) 0.12 0 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 0.08 30 -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature RDS (on) , Drain-to-Source On Resistance () V GS = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 4 IRF7316GPbF VGS = 0V C, Capacitance (pF) 1200 20 f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd 1000 Ciss 800 Coss 600 400 Crss 200 0 1 ID = -4.9A SHORTED -VGS , Gate-to-Source Voltage (V) 1400 10 100 A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) - V DS , Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7316GPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ',0 % $ + >@ ( $ 0,1 $ E F ' ( H %$6,& H ; H H ;E >@ $ $ 0,//,0(7(56 0$; $ ,1&+(6 0,1 0$; %$6,& %$6,& %$6,& + . / \ .[ & \ >@ & $ % ;/ ;F )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)*3%) ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; )* '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 *'(6,*1$7(6 +$/2*(1)5(( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 6 IRF7316GPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2009 www.irf.com 7