Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
•I
T (AV) ...........................................................................5A
•V
DRM ..............................................................400V/600V
•I
GT .........................................................................200µA
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage ✽1
DC off-state voltage ✽1
Voltage class Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=88°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Ratings
7.8
5
90
33
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.26
✽1. With Gate-to-cathode resistance RGK=220Ω
6.5
5.0±0.2
2.3 2.3
0.9 MAX 1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
23
4
1
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING Dimensions
in mm
MP-3
24
1
3
1
2
3
4
CATHODE
ANODE
GATE
ANODE
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
✽2.The method point for case temperature is at anode tab.
✽3.If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BD)
The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.
B
20 ~ 50
Item
IGT (µA)
A
1 ~ 30
C
40 ~ 100
D
80 ~ 200
ELECTRICAL CHARACTERISTICS
Test conditions
Tj=125°C, VRRM applied, RGK=220Ω
Tj=125°C, VDRM applied, RGK=220Ω
Tc=25°C, ITM=15A, instantaneous value
Tj=25°C, VD=6V, IT=0.1A
Tj=125°C, VD=1/2VDRM, RGK=220Ω
Tj=25°C, VD=6V, IT=0.1A
Tj=25°C, VD=12V, RGK=220Ω
Junction to case ✽2
Unit
mA
mA
V
V
V
µA
mA
°C/W
Typ.
—
—
—
—
—
—
3.5
—
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.1
1
—
—
Max.
2.0
2.0
1.8
0.8
—
200✽3
—
3.0
10
0
23 5710
1
40
20
23 5710
2
44
60
80
100
30
10
50
70
90
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
c
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
0
10
–1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
523 57
10
1
23 57
10
2
23 57 23
10
–1
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 200µA
(T
j
= 25°C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.1V
I
FGM
= 0.3A
16
14
6
4
2
12
10
8
080 2467135
θ
360°
θ = 30°
60°
120°
90°
180°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE VOLTAGE (V)
GATE CURRENT (mA)
2310
0
5710
1
23 5710
2
23 5710
3
10
1
2310
–3
5710
–2
23 5710
–1
23 5710
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
JUNCTION TO AMBIENT
JUNCTION TO CASE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
TIME (s)
160
120
60
40
20
140
100
80
080 2467135
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
θ = 30° 60° 120°
90° 180°
GATE CHARACTERISTICS
120 14060–20–40–60 0 20 40 80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
# 1 # 2 # 1
@
11µA
# 2
@
61µA
I
GT
(25°C)
R
L
= 60Ω
V
D
= 6V
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0120 140–40–60 –20 20 80
0.2
0.5
0.9
06040 100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
T
j
= 25°C
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
16
12
6
4
2
14
10
8
080 2467135
θ = 30° 60° 120°
90°
180°
θ θ
360°
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
60°
120°
90°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
WITHOUT FIN
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
60°
120°
90°
180°
θ θ
360°
WITHOUT FIN
RESISTIVE LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
080 2467135
θ = 30° 60° 90°
θ θ
360°
120°180°
RESISTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
080 2467135
80 80 t2.3
θ = 30°
60°
120°
180°
90°
θ θ
360°
RESISTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
160
120
60
40
20
140
100
80
080 2467135
θ = 30°
60°
120°
90°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
80 80 t2.3
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
–40–20 0 20 40 60 80 100120140160
160
0
80
100
120
140
40
60
20
TYPICAL EXAMPLE
–40–20 0 20 40 60 80 100120140160
160
0
80
100
120
140
40
60
20
R
GK
= 220Ω
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25 °C)
231005710
123 5710
223 5710
3
160
0
120
140
40
60
80
100
20
T
j
= 125°C
R
GK
= 220Ω
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t°C)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25°C)
23 5710
-1 23 5710
023 5710
1
102
101
103
100
2
3
5
7
2
3
5
7
2
3
5
7TYPICAL EXAMPLE T
j
= 125°C
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (Ω)
100 (%)
BREAKOVER VOLTAGE (R
GK
= rΩ)
BREAKOVER VOLTAGE (R
GK
= 220Ω)
60–20–40–60 0 20 40 80 100120140
7
5
3
4
2
7
5
3
4
2
10–1
100
101
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE I
GT
(25°C)= 35µA
V
D
= 12V
R
GK
= 220Ω
23 5710
-1 23 5710
023 5710
1
400
0
100
150
200
250
300
350
50
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
HOLDING CURRENT (R
GK
= rΩ)
HOLDING CURRENT (R
GK
= 220Ω)
# 1 14µA 1.7mA
# 2 48µA 2.7mA
I
GT
(25°C) I
H
(1K)
TYPICAL EXAMPLE T
j
= 25°C
# 1 # 2
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
2310
0
544710
1
23 5710
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
# 1 11µA
# 2 61µA
I
GT
(DC)
T
a
= 25°C
R
L
= 60Ω
V
D
= 6V
# 1
# 2
