ES2A THRU ES2K
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S025
Rev. 2.7, 07-Jan-21
www.21yangjie.com
Surface Mount Super Fast Recovery Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super Fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
Mechanical Data
● Package: DO-214AA (SMB) 　
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: Cathode line denotes the cathode end 　
■Maximum Ratings (Ta=25℃ Unless otherwise specified）
PARAMETER SYMBOL UNIT ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K
Device marking code ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K
Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 800
Maximum RMS Voltage VRMS V 35 70 105 140 210 280 350 420 560
Maximum DC blocking Voltage VDC V 50 100 150 200 300 400 500 600 800
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1) IO A 2.0
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃ IFSM A
50
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃ 100
Current squared time
@1ms≤t8.3≤ms Tj=25℃，Rating of per diode I2t A2s10.375
Typical junction capacitance
@Measured at 1MHz and Applied Reverse
Voltage of 4.0 V.D.C
Cj pF 31 17 12 12
Storage temperature Tstg ℃ -55 ~ +150
Junction temperature Tj ℃ -55 ~ +150
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
PARAMETER SYMBOL UNIT TEST
CONDITIONS ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K
Maximum instantaneous
forward voltage drop per diode VF V IFM=2.0A 0.95 1.3 1.7 1.85
Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,
Irr=0.25A 35
Maximum DC reverse current at
rated DC blocking voltage per
diode
IR μA
Tj =25℃ 5.0
Tj =125℃ 100
COMPLIANT
RoHS
ES2A THRU ES2K
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S025
Rev. 2.7, 07-Jan-21
www.21yangjie.com
■Thermal Characteristics （Ta=25℃ Unless otherwise specified）
PARAMETER SYMBOL UNIT ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J ES2K
Typical Thermal Resistance
RθJ-A(1)
℃/W
60
RθJ-L(1) 22
RθJ-C(1) 16
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas
■ Characteristics (Typical)
PeakForwardSurgeCurrent(A)
NumberofCycles
FIG2：SurgeForwardCurrentCapability
8.3ms Single Half Sine Wave
110100
0
10
20
30
40
50
20 160
FIG1：Io‐TLCurve
AverageForwardOutputCurrent(A)
Resistive or Inductive Load
P.C.B. Mounted on 0.3"×0.3"
(8.0mm×8.0mm)Copper Pad Areas
LeadTemperature(℃)
2.4
0
40 60 80 100 120 140
0.4
0.8
1.2
1.6
2.0
0 20 40 60 80 100
0.01
0.1
1.0
10
100
PercentofRatedPeakReverseVoltage(%)
InstantaneousReverseCurrent(uA)
Tj=25℃
FIG4:Typical Reverse Characteristics
Tj=125℃
0.4 0.8 1.2 1.6 2.0 2.4
0.01
0.02
0.05
InstantaneousForwardVoltage(V)
InstantaneousForwardCurrent(A)
FIG3: Typical Forward Voltage
0.1
1
2
4
6
0.5
ES2A~ES2D
ES2F~ES2G
ES2H-ES2J
ES2K
ES2A THRU ES2K
3 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S025
Rev. 2.7, 07-Jan-21
www.21yangjie.com
■Ordering Information (Example)
PREFERED P/N PACKING
CODE UNIT WEIGHT(g) MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
ES2A-ES2K F1 Approximate 0.096 3000 6000 48000 13” reel
ES2A-ES2K F2 Approximate 0.096 750 6000 24000 7” reel
ES2A-ES2K F3 Approximate 0.096 500 4000 16000 7” reel
■ Outline Dimensions
DO-214AA(SMB)
Dim Min Max
A 1.85 2.15
B 3.30 3.94
C 4.05 4.75
D 1.99 2.61
E 5.21 5.59
F 0.90 1.41
G 0.10 0.20
H 0.15 0.31
Dimensions in millimeters
DO-214AA(SMB)
A B
C
D
E
FHG
0
trr
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
-0.25A
-1.0A
+0.5A
1cm SET TIME BASE FOR
5/10ns/cm
(-)
(+)
(-)
(+)
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE1)
DUT
1Ω
NONINDUCTIVE
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1MΩ 22pf
2.Rise Time=10ns max.Sourse Impedance=50Ω
ES2A THRU ES2K
4 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S025
Rev. 2.7, 07-Jan-21
www.21yangjie.com
■ Suggested pad layout
DO-214AA(SMB)
Dim Millimeters
P1 6.8
P2 4.3
P3 1.8
Q12.5
Q22.3
Dimensions in millimeters
P2
Q2
Q1
P1
P3
ES2A THRU ES2K
5 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S025
Rev. 2.7, 07-Jan-21
www.21yangjie.com
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.