Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1517, 2SK1518
Silicon N Channel MOS FET REJ03G0947-0200
(Previous : AD E-208- 1 287)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
123
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1517 450 Drain to source voltage 2SK1518 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 20 A
Drain peak current ID(pulse)*1 80 A
Body to drain diode reverse drain current IDR 20 A
Channel dissipation Pch*2 120 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1517 450 Drain to source
breakdown voltage 2SK1518 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1517 VDS = 360 V, VGS = 0 Zero gate voltage drain
current 2SK1518 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1517 — 0.20 0.25 Static drain to source on
state resistance 2SK1518 RDS(on) — 0.22 0.27 Ω I
D = 10 A, VGS = 10 V *3
Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V *3
Input capacitance Ciss — 3050 — pF
Output capacitance Coss — 940 — pF
Reverse transfer capacitance Crss — 140 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 35 — ns
Rise time tr — 130 — ns
Turn-off delay time td(off) — 240 — ns
Fall time tf — 105 — ns
ID = 10 A, VGS = 10 V,
RL = 3 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time trr — 120 — ns IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
150
100
50
0 50 100 150
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
100
10 100 1,000
Drain to Source Voltage V
DS
(V)
Drain Current ID (A)
Maximum Safe Operation Area
13 30 300
30
10
3
1
0.3
0.1
Ta = 25
°
C
10 µs
100 µs
1 ms
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 Shot)
Operation in this area
is limited by R
DS (on)
2SK1518
2SK1517
50
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
40
10
10 30 400
20
30
Drain Current I
D
(A)
V
GS
= 4 V
Pulse Test
6 V
7 V10 V
5 V
20
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
16
4
2680
8
12
V
DS
= 20 V
Pulse Test
T
C
= – 25
°
C
75
°
C25
°
C
10
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
412160
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
I
D
= 5 A
20 A
10 A
5
100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1
Static Drain to Source on State
Resistance vs. Drain Current
2
1
0.5
0.2
0.1
0.05
2 5 10 20 50
Pulse Test
V
GS
= 10 V
15 V
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
40 160
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.8
0.2
0 80 120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
V
GS
= 10 V
I
D
= 20 A
10 A
5 A
5
20
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
0.2
1
2
0.5
0.2
0.1
0.05
0.5 1 2 5 10
–25°C
T
C
= 25°C
75°C
V
DS
= 20 V
Pulse Test
5,000
50
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.5
2,000
1,000
500
200
100
50
12 51020
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
20 5
0
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
Crss
Coss
Ciss
V
GS
= 0
f = 1 MHz
500
80 200
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
400
100
40 120 1600
200
300
20
16
4
0
8
12
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
250 V
400 V
V
DD
= 400 V
250 V
100 V
I
D
= 20 A
V
DS
V
GS
500
50
Drain Current I
D
(A)
Switching Time t (ns)
0.5
Switching Characteristics
200
100
50
20
10
5
12 51020
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
t
d (off)
t
f
t
d (on)
t
r
•
•
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 5 of 6
20
0.8 2.0
Source to Drain Voltage VSD (V)
Reverse Drain Current I
DR
(A)
16
0.4 1.2 1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
Pulse Test
V
GS
= 0, –10 V
5 V
10 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1.0
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 1.08°C/W, T
C
= 25°C
T
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Switching Time Test Circuit
Vin Monitor
Vout Monitor
R
L
V
DD
30 V
D.U.T
50 Ω
Vin
10 V =
..
Vout
Waveforms
t
d
(on)
10%
10%
90% 90%
10%
90%
Vin
t
r
t
d
(off)
t
f
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max 2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Package Name
PRSS0004ZE-A TO-3P / TO-3PV
MASS[Typ.]
5.0gSC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1517-E 360 pcs Box (Tube)
2SK1518-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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