7MBR150VZ060-50 IGBT Modules IGBT MODULE (V series) 600V / 150A / PIM Features Low VCE (sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC I CP PC VRRM VRRM IO I FSM I 2t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature Tc Tstg Continuous 1ms Tc=80C Tc=80C 1ms 1 device Continuous 1ms 1 device Tc=80C Tc=80C 50Hz/60Hz, sine wave 10ms, Tj=150C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 600 20 150 300 150 300 485 600 20 75 150 300 600 800 150 700 2450 175 150 150 150 125 -40 to +125 V V A W V V A W V V A A A 2s C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 7MBR150VZ060-50 IGBT Modules Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 600V VGE = 0V, VGE = 20V VCE = 20V, I C = 50mA VCE (sat) (terminal) VGE = 15V I C = 150A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Tj=25C Tj=125C Tj=150C Tj=25C VGE = 15V Tj=125C I C = 150A Tj=150C VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V I C = 150A VGE = +15 / -15V RG = 9 I F = 150A Forward on voltage Brake Units mA nA V V nF s V VF (chip) I F = 150A trr I F = 150A Zero gate voltage collector current I CES VGE = 0V VCE = 600V - - 1.0 mA Gate-Emitter leakage current I GES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V I C = 75A 465 3305 1.95 2.25 2.35 1.60 1.90 2.00 0.36 0.25 0.52 0.03 1.90 1.25 5000 495 3375 2.30 2.05 1.20 0.60 1.20 0.45 1.00 2.35 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.25 2.70 2.55 2.65 1.60 2.05 1.90 2.00 9.7 0.36 1.20 0.25 0.60 0.07 0.52 1.20 0.03 0.45 2.25 2.70 2.15 2.10 1.60 2.05 1.50 1.45 0.35 ton tr toff tf IRRM VGE = 15V I C = 75A Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCE = 300V I C = 75A VGE = +15 / -15V RG =30 VR = 600V Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 800V T = 25C T = 100C T = 25 / 50C Symbols Conditions I F = 150A terminal chip s V s mA V mA K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 http://store.iiic.cc/ Characteristics min. typ. max. 0.31 0.60 0.50 0.47 0.05 - Units C/W 7MBR150VZ060-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 15V Collector current: IC [A] VGE=20V 250 300 VGE=20V 12V Collector current: IC [A] 300 Tj= 150oC / chip 200 150 10V 100 50 250 12V 200 150 10V 100 50 8V 0 8V 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE[V] 300 3 4 5 Tj= 25oC / chip 8 Collector - Emitter voltage: VCE [V] Collector current: IC [A] 2 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=150C Tj=25C 1 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 250 Tj=125C 200 150 100 50 0 6 4 Ic=300A Ic=150A Ic=75A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Cies 10.0 Cres Coes 0.1 0.0 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC 1.0 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 200 400 600 Gate charge: Qg [nC] 3 800 1000 7MBR150VZ060-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9, Tj= 150C 10000 1000 toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9, Tj= 125C ton tr 100 tf 10 0 100 200 300 10000 1000 tr 100 tf 10 400 0 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr 1000 tf 10 1.0 10.0 100.0 1000.0 20 Eon(150C) 15 Eoff(150C) Eoff(125C) 10 5 Err(150C) Err(125C) 0 0 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] 200 300 400 400 30 20 Eoff(150C) Eoff(125C) Err(150C) Err(125C) 100 100 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9 ,Tj <= 125C Eon(150C) Eon(125C) 10 400 Collector current: IC [A] 40 1 300 Eon(125C) [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V 0 200 Collector current: IC [A] 25 Gate resistance : Rg [] 10 100 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9 [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 125C 100 ton toff 300 200 RBSOA (Repetitive pulse) 100 0 0 1000 200 400 600 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [] 4 800 7MBR150VZ060-50 IGBT Modules [ Inverter ] Forward current vs. forward on voltage (typ.) chip [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=9 200 Tj=125C Tj=150C 100 Tj=25C 0 0.0 0.5 1.0 1.5 2.0 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 300 2.5 Irr(150C) trr(125C) 100 trr(150C) Irr(125C) 10 3.0 0 100 Forward on voltage : VF [V] 200 300 400 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 300 200 100 Tj=125 C Tj=25C 0 0 1 1 2 2 3 3 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 1.00 100 FWD[Inverter] Conv. Diode Resistance : R [k] Thermal resistanse : Rth(j-c) [ C/W ] Transient thermal resistance (max.) IGBT[Inverter] IGBT[Brake] 0.10 0.01 0.001 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] 5 7MBR150VZ060-50 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip VGE=20V 15V 150 VGE=20V 12V 100 Collector current: IC [A] Collector current: IC [A] 150 Tj= 150oC / chip 10V 50 15V 12V 100 10V 50 8V 8V 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage: VCE[V] Tj= 25oC / chip Tj=150C Collector - Emitter voltage: VCE [V] Collector current: IC [A] 5 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=125C 50 0 6 4 Ic=150A Ic=75A Ic=38A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Cies 1.0 Coes Cres 0.1 0 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC 10.0 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 4 8 Tj=25C 100 3 Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 150 2 1 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 200 400 Gate charge: Qg [nC] 6 600 7MBR150VZ060-50 IGBT Modules Outline Drawings, mm ( shows theoretical dimension. ) shows reference dimension. Section A-A Equivalent Circuit Schematic 7 7MBR150VZ060-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8 http://store.iiic.cc/