Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 4 1Publication Order Number:
MMBF170LT1/D
MMBF170LT1
Power MOSFET
500 mA, 60 V
N−Channel SOT−23
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 Vdc
Drain−Gate Voltage VDGS 60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 s) VGS
VGSM ±20
±40 Vdc
Vpk
Drain Current − Continuous
− Pulsed ID
IDM 0.5
0.8 Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. FR−5 = 1.0 0.75 0.062 in.
3
1
2
N−Channel
SOT−23
CASE 318
STYLE 21
W
MARKING DIAGRAM
6Z
6Z = Device Code
W = Work Week
PIN ASSIGNMENT
2
1
3
500 mA, 60 V
RDS(on) = 5
3
Drain
2 SourceGate 1
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ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
MMBF170LT1
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 A) V(BR)DSS 60 − Vdc
Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSS − 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) − 5.0
On−State Drain Current (VDS = 25 Vdc, VGS = 0) ID(off) − 0.5 A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss − 60 pF
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time (VDD = 25 Vdc, ID = 500 mA, R
g
en = 50 )td(on) − 10 ns
Turn−Off Delay Time
(VDD
25
Vdc
,
ID
500
mA
,
Rgen
50
)
Figure 1 td(off) − 10
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping†
MMBF170LT1 SOT−23 (TO−236) 10,000 Tape & Reel
MMBF170LT1G SOT−23 (TO−236)
(Pb−Free) 3,000 Tape & Reel
MMBF170LT3 SOT−23 (TO−236) 10,000 Tape & Reel
MMBF170LT3G SOT−23 (TO−236)
(Pb−Free) 3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
20 dB 50
ATTENUATOR
PULSE
GENERATOR
50
50 1 M
Vout
125
+25 V
40 pF
Vin
TO SAMPLING
SCOPE
50 INPUT
PULSE WIDTH
50%
90%
50%
10%
10%
90% 90%
Vin
OUTPUT
INVERTED
INPUT
(Vin AMPLITUDE 10 VOLTS)
Vout
toff
tf
td(off)
ton
td(on) tr
MMBF170LT1
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TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 3. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60 −20 +20 +60 +100 +140 −60 −20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 5. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 6. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V −55 °C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
MMBF170LT1
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
SOT−23
2.0
0.079
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMBF170LT1/D
Thermal Clad is a registered trademark of the Bergquist Company.
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