Rev. A, March 2003
FQP8N80C/FQPF8N80C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA800 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4 A -- 1.29 1.55 Ω
gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) -- 5.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1580 2050 pF
Coss Output Capacitance -- 135 175 pF
Crss Reverse Transfer Capacitance -- 13 17 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 8 A,
RG = 25 Ω
(Note 4, 5)
-- 40 90 ns
trTurn-On Rise Time -- 110 230 ns
td(off) Turn-Off D e l a y Time -- 65 140 n s
tfTurn -Off Fa ll Time -- 70 150 ns
QgTotal Gate Ch arge VDS = 640 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)
-- 35 45 nC
Qgs Gate-Source Charge -- 10 -- nC
Qgd Gate-Drain Charge -- 14 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 8 A ,
dIF / dt = 100 A/µs (Note 4)
-- 690 -- ns
Qrr Reverse Recovery Charge -- 8.2 - - µC