NPN POWER TRANSISTORS |...... 15 AMP, 175 WATTS 2N6547 The 2N6547 transistor is designed for high-voltage, high- speed power switching in inductive circuits where fall time is critical. It is particularly suited for 115 and 220 volt line operated switch-mode applications such as: switching regu- lators, PWM inverters and motor controls, solenoid and relay drivers, and deflection circuits. Features: e High temperature performance specified e Reversed biased SOA with inductive loads e Switching times with inductive loads e Saturation Voltages e Leakage currents NPN COLLECTOR BASE EMITTER CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) MAX ~~ .368(9.08) MAX 085(1.65) je DIA + MAX 1 FT wpe SEATING PLANE 0.043(1.09) pia, | be C 426(10.82) MIN 0.038(0.97} 1.050(26.68) MAX") 0.675(17.18) 0.650(76.51) CASE TEMP REFERENCE POINT 20(5.00) EMITTER BASE 0.162(4.03) pia 0. 1543.84) 2 HOLES 1.197(30.40) i 177(29.90) 1.573(39.96) MAX 0.225(5.72) = COLLECTOR 0.205(5.21) (CASE) 0440/11. 18) 0 420(10.67) maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL 2N6547 UNITS Collector-Emitter Voltage VCEO 400 Volts Collector-Emitter Voltage VCEX 450 Volts Emitter Base Voltage VEBO 9.0 Volts Collector Current - Continuous Io 15 A Peak Iom 30 Base Current Continuous Ip 10 A Peak lam 20 Total Power Dissipation @ To = 100C Pp 100 Watts To= 25C 175 Derate above 25C 1.0 w/C Operating and Storage Junction Temperature Range Ty, Tsta -65 to +200 C thermal characteristics Thermal Resistance, Junction to Case Rejc 1.0 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Te 275 C 819 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [symMBOL | MIN | TYP MAX UNIT off characteristics ee coma} Sustaining Voltage VcEo(sus) 400 _ _ Volts Collector-Emitter Sustaining Voltage (Ig = 8.0MA, Velamp = Rated VcEx, To = 100C) VCEX 450 Volts (Ic = 15A, Velamp = Rated VcEo - 100V, Tc = 100C) 300 Volts Collector Cutoff Current (Vcev = Rated Value, Vge(off) = -1.5V) IcEV _ _ 1.0 mA (VcEv = Rated Value, Vge(oft) = -1-5V, Tc = 100C) _ _ 4.0 Collector Cutoff Current \ _ _ 5.0 A (VcE = Rated Vcev, Ree = 500, Tc = 100C) CER m Emitter Cutoff Current (VeR = 9.0V) lEBo _ _ 1.0 mA second breakdown Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 7 Clamped Inductive SOA with Base Reversed Bias RBSOA SEE FIGURE 8 on characteristics DC Current Gain hee (Ic = 5A, Voce = 2V) 12 _ 60 _ (Ico = 10A, Voce = 2V) 6 _ 30 Coliector-Emitter Saturation Voltage VcE(sat) (Ic = 10A, Ip = 2A) 1.5 Vv (Ig = 15A, Ip = 3A) = 5.0 (Ig = 10A, Ip = 2A, Tc = 100C) 2.5 Base-Emitter Saturation Voltage VBE(sat) (Ig = 10A, Ig = 2.0A) _ 1.6 Vv (Ig = 10A, Ip = 2.0A, Tc = 100C) 1.6 switching characteristics Resistive Load Delay Time Voc = 250V, ic = 10A tg _ _ -05 us Rise Time Ig1 = Ip2 = 2A, tp = 100us tr _ _ 1.0 Storage Time Duty Cycle < 2.0% ts _ _ 4.0 Fall Time tf _ _ 0.7 Ty = 1509C -59C hee, DC CURRENT GAIN ewe VCE = 20V me eee = VCE IOV 02 03 0.5 1.0 20 3.0 50 7.0 10 tc, COLLECTOR CURRENT (AMP) FIGURE 1 DOC CURRENT GAIN 820 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.2 0.8 0.4 0 0.07 0.1 0.2 0.3 05 07 1.0 20 63.0 tc, COLLECTOR CURRENT (AMP) FIGURE 2 COLLECTOR SATURATION REGION 7.0 VBE (sat) @ Ic/1p = 5.0 VBE{an) @ VcE = 2.0V V, VOLTAGE (VOLTS) VCE (sat) @ Ic/lg = 5 1.0 2.0 3.0 .0 7.0 10 Ic, COLLECTOR CURRENT (AMP) FIGURE 3 ON VOLTAGE 02 03 0.5 3.0k 2.0k Veco = 280 V (c/tp = 6.0 Ty = 250C 1.0 k 700 500 300 t, TIME (ns) 100 tg @ VBE (off) = 5.0V 70 50 30 0.02 Ic, COLLECTOR CURRENT (AMP) FIGURE 5 TURN-ON TIME 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 Tc= <- BONDING WIRE eme me THERMAL LIMIT (SING LE PULSE) SECOND BREAKDOWN LIMIT tc, COLLECTOR CURRENT (AMP) 0.01 0.005 5a 7.0 CURVES APPLY BELOW RATED VcEg 2N6547 10 20 30 50 70 100 200 300 400 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 7 FORWARD BIAS SAFE OPERATING AREA tc, COLLECTOR CURRENT (AMP) 821 t, TIME (ns) by, TEMPERATURE COEFFICIENTS (mV/C) 25 2.0 16 1.0 -0.5 -1.0 Applies for <hpe/3 OVC for VCE (sat) -55C to 25C to 1 6vB forV 15 to 25C -2.0 . -2.5 0.2 03 05 07 1.0 20 3.0 50 7.0 10 20 tg, COLLECTOR CURRENT (AMP) FIGURE 4 TEMPERATURE COEFFICIENTS 10k Veg * 250 V 7.0k ichg =6.0 5.0k 'p1 = 12 Ty = 25C 3.0k 2.0k Lok 700 500 300 200 100 0.02 0.05 01 02 05 61 Ic, COLLECTOR CURRENT (AMP) FIGURE 6 TURN-OFF TIME VCEX(sus} VeE(oft) <5 V Te < 100C YCEO (sus) VCEX(sus) 100 200 300 Vce, COLLECTOR-EMITTER VOLTAGE VOLTS) FIGURE 8 REVERSE BIAS SAFE OPERATING AREA 500 POWER DERATING FACTOR(%) SECOND BREAKDOWN DERATING THERMAL DERATING 80 1 Tc, CASE TEMPERATURE (C) FIGURE 9 - POWER DERATING 1.0 07 08 03 02 Zactt) = r(t) Ress TRANSIENT THERMAL RESISTANCE (NORMALIZED) 04 Rec 1.0C/W MAX D CURVES APPLY FOR POWER 0.07 PULSE TRAIN SHOWN READ TIME @ty 0.05 TJepk) - TS = Pipk) Zeuctt) DUTY CYCLE, D= ty/tz on tt 0.02 Tr SINGLE Pipk) te 0.01 0.01 0.02 005 01 02 O8 10 20 50 10 20 80 100 200 800 10k TIME (ms) FIGURE 10 - THERMAL RESPONSE 822