VISHAY
BAS40-HT3 to BAS40-06-HT3
Document Number 85688
Rev. 4, 03-Jun-03
Vishay Semiconductors
www.vishay.com
1
12
3
BAS40-HT3
12
3
BAS40-05-HT3
Top View
12
3
BAS40-06-HT3
12
3
BAS40-04-HT3
Top View
17008
Pin 1
Top view
Schottky Diodes
Features
These diodes feature very low turn-on voltage and
fast switching.
These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
Space saving LiLiPut package
Mechanical Data
Case: LLP75-3B Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 5 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BAS40-HT3 BAS40-HT3-GS08 43 Tape and Reel
BAS40-04-HT3 BAS40-04-HT3-GS08 44 Tape and Reel
BAS40-05-HT3 BAS40-05-HT3-GS08 45 Tape and Reel
BAS40-06-HT3 BAS40-06-HT3-GS08 46 Tape and Reel
Parameter Te st c o n d i t i o n Symbol Value Unit
Repetitive peak reverse voltage VRRM 40 V
Forward continuous current Tamb = 25 °C IF200 mA
Surge forward current tp < 1 s, Tamb = 25 °C IFSM 600 mA
Power dissipation Tamb = 25 °C Ptot 200 mW
Parameter Tes t conditi on Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 430 °C/W
Junction temperature Tj125 °C
Storage temperature range TS- 55 to +125 °C
www.vishay.com
2
Document Number 85688
Rev. 4, 03-Jun-03
VISHAY
BAS40-HT3 to BAS40-06-HT3
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in mm
Parameter Test condition Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 40 V
Leakage current Pulse test VR = 30 V, tp < 300 µs IR20 100 nA
Forward voltage Pulse test tp < 300 µs,
IF = 1.0 mA
VF380 mV
Pulse test tp < 300 µs,
IF = 40 mA,
VF1000 mV
Capacitance VR = 0 V, f = 1 MHz Ctot 4.0 5pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100
trr 5ns
18057
ISO Method E
VISHAY
BAS40-HT3 to BAS40-06-HT3
Document Number 85688
Rev. 4, 03-Jun-03
Vishay Semiconductors
www.vishay.com
3
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423