VNQ660SP Quad channel high side solid state relay Features Type RDS(on) IOUT VCC VNQ660SP 50m(1) 6A 36V 10 1. Per each channel. 1 PowerSO-10 CMOS compatible inputs Off state open load detection Undervoltage and overvoltage shutdown Overvoltage clamp Thermal shutdown Current limitation Very low standby power dissipation Protection against loss of ground and loss of VCC Reverse battery protection(a) Description The VNQ660SP is a monolithic device made by using| STMicroelectronics VIPower M0-3 Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Builtin thermal shutdown and output current limitation protect the chip from over temperature and short circuit. a. See Application schematic on page 16 Table 1. Device summary Order codes Package PowerSO-10 December 2008 Tube Tape and reel VNQ660SP VNQ660SP13TR Rev 5 1/26 www.st.com 26 Contents VNQ660SP Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1 4 6 2/26 3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 16 3.1.2 Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . 17 3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.4 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . . 18 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.1 5 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16 PowerSO-10 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.1 ECOPACK(R) packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.2 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.3 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 VNQ660SP List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VCC - output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Switching (VCC = 13V; Tj = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Openload detection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3/26 List of figures VNQ660SP List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. 4/26 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 On state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 On state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Openload Off state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PowerSO-10 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 19 Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Thermal fitting model of a quad channel HSD in PowerSO-10. . . . . . . . . . . . . . . . . . . . . . 20 PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 PowerSO-10 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 SO-28 tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 VNQ660SP 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram VCC OVERVOLTAGE UNDERVOLTAGE DEMAG 1 DRIVER 1 OUTPUT 1 ILIM1 INPUT 1 DEMAG 2 INPUT 2 DRIVER 2 INPUT 3 OUTPUT 2 ILIM2 LOGIC DEMAG 3 INPUT 4 DRIVER 3 STATUS OUTPUT 3 ILIM3 STATUS DEMAG 4 DRIVER 4 OVERTEMP. 1 OUTPUT 4 ILIM4 OVERTEMP. 2 OPEN LOAD OFF-STATE OVERTEMP. 3 OVERTEMP. 4 GND Figure 2. Configuration diagram (top view) STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1 6 7 8 9 5 4 3 10 1 GND OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1 2 11 VCC Table 2. Suggested connections for unused and not connected pins Connection / pin Status N.C. Output Input Floating X X X X To ground X Through 10K resistor 5/26 Electrical specifications VNQ660SP 2 Electrical specifications 2.1 Absolute maximum ratings Stressing the device above the rating listed in the "Absolute maximum ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document. Table 3. Absolute maximum ratings Symbol VCC 2.2 Parameter Value Unit 41 V - 0.3 V Internally limited A - 15 A Supply voltage - VCC Reverse DC supply voltage IOUT DC output current, per each channel IR Reverse DC output current, per each channel IIN Input current +/- 10 mA ISTAT Status current +/- 10 mA IGND DC ground current at TC < 25C -200 mA VESD Electrostatic discharge (human body model: R=1.5K; C = 100pF) - INPUT - STATUS - OUTPUT - VCC 4000 4000 5000 5000 V V V V EMAX Maximum switching energy (L = 0.38mH; RL = 0; Vbat = 13.5V; Tjstart = 150C; IL = 14A) 101 mJ Ptot Power dissipation at TC = 25C 114 W Tj Junction operating temperature - 40 to 150 C Tstg Storage temperature - 65 to 150 C EC Non repetitive clamping energy at TC = 25C 150 mJ Thermal data Table 4. Symbol Thermal data (per island) Parameter Value Rthj-case Thermal resistance junction-case 1.1(1) Rthj-amb Thermal resistance junction-ambient (one chip ON) 51.1(1) 1. When mounted on a standard single-sided FR-4 board with 1cm2 Unit 52(2) C/W 33(2) C/W of Cu (at least 35 m thick). 2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 m thick). 6/26 VNQ660SP 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 6V < VCC < 24V; -40C < Tj < 150C, unless otherwise stated. Figure 3. Current and voltage conventions IS IIN1 INPUT 1 VCC OUTPUT 1 IIN2 VIN1 INPUT 2 IOUT2 IOUT3 VCC VOUT1 VOUT2 OUTPUT 3 INPUT 3 VOUT3 IOUT4 VIN3 IIN4 OUTPUT 4 INPUT 4 VIN4 VOUT4 GND STATUS VSTAT Note: VF1 (*) OUTPUT 2 IIN3 VIN2 IOUT1 ISTAT IGND VFn = VCCn - VOUTn during reverse battery condition. Table 5. Symbol Power Parameter VCC(1) Operating supply voltage VUSD(1) Test conditions Min. Typ. Max. Unit 6 13 36 V Undervoltage shutdown 3.5 4.6 6 V Undervoltage hysteresis 0.2 1 V VOV(1) Overvoltage shutdown 36 V VOVhyst(1) Overvoltage hysteresis 0.25 V VUVhyst(1) RON IS(1) On state resistance Supply current IOUT = 1A; Tj = 25C 9V < VCC < 18V IOUT = 1A;Tj = 150C 9V < VCC < 18V IOUT = 1A; VCC = 6V 40 50 m 85 100 m 130 m Off State; VCC = 13.5V; VIN = VOUT = 0V 12 40 A Off State; VCC = 13.5V; VIN = VOUT = 0V; Tj = 25C 12 25 A On State; VCC = 13V; VIN = 3.25V; 9V < VCC < 18V 6 12 mA 7/26 Electrical specifications Table 5. VNQ660SP Power (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit 0 50 A -75 0 A IL(off1) Off state output current VIN = VOUT = 0V IL(off2) Off state output current VIN = 0V; VOUT = 3.5V IL(off3) Off state output current VIN = VOUT = 0V; VCC = 13V; Tj = 125C 5 A IL(off4) Off state output current VIN = VOUT = 0V; VCC = 13V; Tj =25C 3 A 1. Per device. Table 6. Symbol Min. Typ. Max. Unit Shutdown temperature 150 170 200 C TR Reset temperature 135 Thyst Thermal hysteresis 7 15 25 C 6 10 18 18 A A TTSD Ilim Note: Parameter DC short circuit current Vdemag Turn-off output clamp voltage VSTAT Status low output voltage ILSTAT Test conditions 9V < VCC < 36V 6V < VCC < 36V IOUT = 2A; VIN = 0V; L = 6mH C VCC - VCC - VCC 41 48 55 V ISTAT=1.6mA 0.5 V Status leakage current Normal operation; VSTAT=5V 10 A CSTAT Status pin input capacitance Normal operation; VSTAT=5V 25 pF VSCL Status clamp voltage 8 V V ISTAT=1mA ISTAT=-1mA 6 6.8 - 0.7 To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. Table 7. 8/26 Protections VCC - output diode Symbol Parameter Test conditions VF Forward on voltage - IOUT = 1.6A; Tj = 150C Min. Typ. Max. Unit 0.6 V VNQ660SP Electrical specifications Table 8. Switching (VCC = 13V; Tj = 25C) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time RL = 13 channels 1,2,3,4 (see Figure 5) 40 70 s td(off) Turn-off delay time RL = 13 channels 1,2,3,4 (see Figure 5) 40 140 s dVOUT/dt(on) Turn-on voltage slope RL = 13 channels 1,2,3,4 (see Figure 5) See Figure 10 V/s dVOUT/dt(off) Turn-off voltage slope RL = 13 channels 1,2,3,4 (see Figure 5) See Figure 12 V/s Table 9. Logic inputs Symbol Parameter VIL Input low level voltage IIL Input low level current VIH Input high level voltage IIH Input high level current VI(hyst) Input hysteresis voltage CIN Input capacitance VICL Input clamp voltage Table 10. Test conditions VIN = 1.25V Typ. Max. Unit 1.25 V 1 A 3.25 V VIN = 3.25V 10 0.5 V 6 IIN = 1mA IIN = -1mA A 6.8 - 0.7 40 pF 8 V V Openload detection Symbol Parameter Test conditions tSDL Status delay VOL Openload voltage detection threshold tDOL Openload detection delay at turn-off Figure 4. Min. Min. Typ. Max. See Figure 4 VIN = 0V 1.5 VCC = 18V (see Figure 4) 2.5 Unit 20 s 3.5 V 300 s Status timings OPENLOAD STATUS TIMING OVERTEMP STATUS TIMING VIN VIN VSTAT VSTAT tDOL tSDL tSDL tSDL 9/26 Electrical specifications Figure 5. VNQ660SP Switching characteristics VOUT 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% tr tf t ISENSE 90% INPUT t tDSENSE td(on) td(off) t Table 11. 10/26 Truth table Conditions Input Output Status Normal operation L H L H H H Current limitation L H H L X X H (TJ < TTSD) H (TJ > TTSD) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output voltage > VOL L H H H L H Output current < IOL L H L H H L VNQ660SP Electrical specifications Table 12. Electrical transient requirements ISO T/R Test level 7637/1 Test pulse I II III IV Delays and impedance 1 - 25V - 50V - 75V - 100V 2ms, 10 2 + 25V + 50V + 75V + 100V 0.2ms, 10 3a - 25V - 50V - 100V - 150V 0.1s, 50 3b + 25V + 50V + 75V + 100V 0.1s, 50 4 - 4V - 5V - 6V - 7V 100ms, 0.01 5 + 26.5V + 46.5V + 66.5V + 86.5V 400ms, 2 ISO T/R 7637/1 Test level I II III IV 1 C C C C 2 C C C C 3a C C C C 3b C C C C 4 C C C C 5 C E E E Test pulse Class C E Contents All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. 11/26 Electrical specifications Figure 6. VNQ660SP Waveforms NORMAL OPERATION INPUTn LOAD VOLTAGEn STATUS UNDERVOLTAGE VUSDhyst VCC VUSD INPUTn LOAD VOLTAGEn STATUSn undefined OVERVOLTAGE VCC<VOV VCC>VOV VCC INPUTn LOAD VOLTAGEn STATUSn OPENLOAD with external pull-up INPUTn LOAD VOLTAGEn VOL STATUSn tDOL Tj INPUTn LOAD CURRENTn STATUSn 12/26 TTSD TR OVERTEMPERATURE tDOL VNQ660SP Electrical specifications 2.4 Electrical characteristics curves Figure 7. Off state output current Figure 8. High level input current IL(off1) (A) Iih (A) 10 7 9 Off state Vcc=24V Vout=0V 8 7 6 Vin=3.25V 5 6 4 5 3 4 3 2 2 1 1 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (C ) Figure 9. 50 75 100 125 150 175 150 175 150 175 Tc (C ) Input clamp voltage Figure 10. Turn-on voltage slope Vicl (V) dVout/dt(on) (V/ms) 8 500 450 7.75 Iin=1mA Vcc=13V Rl=13Ohm 400 7.5 350 7.25 300 7 250 200 6.75 150 6.5 100 6.25 50 6 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (C ) 50 75 100 125 Tc (C ) Figure 11. Overvoltage shutdown Figure 12. Turn-off voltage slope Vov (V) dVout/dt(off) (V/ms) 54 700 52 600 Vcc=13V Rl=13Ohm 50 500 48 46 400 44 300 42 40 200 38 100 36 34 0 -50 -25 0 25 50 75 Tc (C ) 100 125 150 175 -50 -25 0 25 50 75 100 125 Tc (C ) 13/26 Electrical specifications VNQ660SP Figure 13. ILIM vs Tcase Figure 14. On state resistance vs VCC Vih (V) RDS (on) (mOhm) 4 100 90 3.75 Iout=1A 80 Tc=150C 3.5 70 3.25 60 3 50 Tc=25C 40 2.75 Tc= - 40C 30 2.5 20 2.25 10 2 0 -50 -25 0 25 50 75 100 125 150 175 8 9 10 11 12 Tc (C ) 13 14 15 16 17 18 19 20 Vcc (V) Figure 15. Input high level Figure 16. Input hysteresis voltage Vih (V) Vihyst (V) 4 1.4 3.75 1.3 1.2 3.5 1.1 3.25 1 3 0.9 2.75 0.8 2.5 0.7 2.25 0.6 2 0.5 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (C ) 75 100 125 150 175 Tc (C ) Figure 17. On state resistance vs Tcase Figure 18. Input low level RDS (on) (mOhm) Vil (V) 100 2.6 90 2.4 Iout=1A 80 50 Vcc=9V; 13V; 18V 2.2 70 2 60 1.8 50 40 1.6 30 1.4 20 1.2 10 0 1 -50 -25 0 25 50 75 Tc (C ) 14/26 100 125 150 175 -50 -25 0 25 50 75 Tc (C ) 100 125 150 175 VNQ660SP Electrical specifications Figure 19. Status leakage current Figure 20. Status low output voltage Ilstat (A) Vstat (V) 0.6 0.05 0.045 0.525 Vstat=5V 0.04 Istat=1.6mA 0.45 0.035 0.375 0.03 0.3 0.025 0.02 0.225 0.015 0.15 0.01 0.075 0.005 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (C ) 50 75 100 125 150 175 Tc (C ) Figure 21. Status clamp voltage Figure 22. Openload Off state detection threshold Vscl (V) Vol (V) 7.4 5 4.5 7.3 Istat=1mA Vin=0V 4 7.2 3.5 7.1 3 7 2.5 2 6.9 1.5 6.8 1 6.7 0.5 6.6 0 -50 -25 0 25 50 75 Tc (C ) 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 Tc (C ) 15/26 Application information 3 VNQ660SP Application information Figure 23. Application schematic +5V +5V VCC Rprot STATUS Dld Rprot INPUT1 OUTPUT1 C Rprot INPUT2 OUTPUT2 Rprot INPUT3 OUTPUT3 INPUT4 OUTPUT4 Rprot GND RGND VGND DGND . Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 Solution 1: a resistor in the ground line (RGND only) This can be used with any type of load. The following show how to dimension the RGND resistor: 1. RGND 600mV / 2 (IS(on)max) 2. RGND ( - VCC) / ( - IGND) where - IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0 during reverse battery situations) is: PD = ( - VCC)2/ RGND 16/26 VNQ660SP Application information This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that, if the microprocessor ground is not shared by the device ground, then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND . If the calculated power dissipation requires the use of a large resistor, or several devices have to share the same resistor, then ST suggests using solution 2 below. 3.1.2 Solution 2: a diode (DGND) in the ground line A resistor (RGND = 1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected. 3.2 Load dump protection Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the VCC maximum DC rating. The same applies if the device is subject to transients on the VCC line that are greater than those shown in the ISO T/R 7637/1 table. 3.3 MCU I/O protection If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/O pins from latching up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os: - VCCpeak / Ilatchup Rprot (VOHC - VIH - VGND) / IIHmax Example For the following conditions: VCCpeak = - 100V Ilatchup 20mA VOHC 4.5V 5k Rprot 65k. Recommended values are: Rprot = 10k 17/26 Application information 3.4 VNQ660SP Maximum demagnetization energy (VCC = 13.5V) Figure 24. Maximum turn-off current versus load inductance ILMAX (A) 100 10 A B C 1 0.01 0.1 1 L (mH) 10 100 A = single pulse at TJstart = 150C B= repetitive pulse at TJstart = 100C C= repetitive pulse at TJstart = 125C VIN, IL Demagnetization Demagnetization Demagnetization t Note: Values are generated with RL = 0. In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. 18/26 VNQ660SP Package and PCB thermal data 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 25. PowerSO-10 PC board Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB thickness = 2mm, Cu thickness = 35m, Copper areas: from minimum pad lay-out to 8 cm2). Figure 26. Rthj-amb Vs PCB copper area in open box free air condition 55 RTHjamb (C /W) 50 45 40 35 30 25 20 0 2 4 6 8 10 PCB Cu heatsink area (cm^2) 19/26 Package and PCB thermal data VNQ660SP Figure 27. Thermal impedance junction ambient single pulse ZT H (C /W) 1000 0.5 cm2 100 2 cm2 4 cm2 10 8 cm2 1 0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000 Equation 1: pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = tp T Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10 20/26 VNQ660SP Package and PCB thermal data Table 13. Thermal parameters Area / island (cm2) 0.5 R1 = R7 = R9 = R11 (C/W) 0.15 R2 = R8 = R10 = R12 (C/W) 0.5 R3 (C/W) 0.4 R4 (C/W) 10 R5 (C/W) 15 R6 (C/W) 26 C1 = C7 = C9 = C11 (W.s/C) 0.0006 C2 = C8 = C10 = C12 (W.s/C) 0.0021 C3 (W.s/C) 0.02 C4 (W.s/C) 0.5 C5 (W.s/C) 1.5 C6 (W.s/C) 5 2 4 8 14.5 10 6 10 14 18 21/26 Package and packing information VNQ660SP 5 Package and packing information 5.1 ECOPACK(R) packages In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. ECOPACK(R) packages are lead-free. The category of Second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. 5.2 PowerSO-10 mechanical data Figure 29. PowerSO-10 package dimensions B 0.10 A B 10 H E E E2 1 S EATING P LANE e B DETAIL "A" A C 0.25 h E4 D = D1 = = = S EATING PLANE A F A1 A1 L DETAIL "A" 22/26 VNQ660SP Package and packing information Table 14. PowerSO-10 mechanical data mm Dim. Min. Typ. Max. A 3.35 3.65 A(1) 3.4 3.6 A1 0 0.10 B 0.40 0.60 B(1) 0.37 0.53 C 0.35 0.55 C(1) 0.23 0.32 D 9.40 9.60 D1 7.40 7.60 E 9.30 9.50 E2 7.20 7.60 E2(1) 7.30 7.50 E4 5.90 6.10 E4(1) 5.90 6.30 e 1.27 F 1.25 1.35 F(1) 1.20 1.40 H 13.80 14.40 H(1) 13.85 14.35 h 0.50 L 1.20 1.80 L(1) 0.80 1.10 0 8 (1) 2 8 1. Muar only POA P013P. 23/26 Package and packing information 5.3 VNQ660SP PowerSO-10 packing information Figure 30. PowerSO-10 suggested Figure 31. PowerSO-10 tube shipment pad layout (no suffix) 14.6 - 14.9 CASABLANCA B 10.8 - 11 MUAR C 6.30 C A A 0.67 - 0.73 1 9.5 10 9 8 2 3 7 4 5 6 B 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Casablanca Muar 50 50 1000 1000 Tube length ( 0.5) 532 532 A B 10.4 16.4 4.9 17.2 C ( 0.1) 0.8 0.8 Figure 32. SO-28 tape and reel shipment (suffix "TR") Reel dimensions Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) All dimensions are in mm. 24 4 24 1.5 1.5 11.5 6.5 2 End Start Top cover tape No components Components 500mm min Empty components pockets saled with cover tape. User direction of feed 24/26 No components 500mm min VNQ660SP 6 Revision history Revision history Table 15. Document revision history Date Revision Changes 22-Jun-2004 1 Initial release. 14-Jul-2004 2 New revision. 24-Jul-2004 3 Minor changes. Current and voltage convention update (page 2). Configuration diagram (top view) & suggested connections for unused and not connected pins insertion (page 3). 6 cm2 Cu condition insertion in thermal data table (page 3). VCC - output diode section update (page 3). Protections note insertion (page 4) Revision history table insertion (page 18). 28-Jul-2004 4 Disclaimers Update (page 19). 03-Dec-2008 5 Document reformatted and restructured. Added contents, list of tables and figures. Added ECOPACK(R) packages information. 25/26 VNQ660SP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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