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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
December 2013
©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FPDB50PH60 Rev. C3
FPDB50PH60
PFC SPM® 3 Series for 2-Phase Bridgeless PFC
Features
UL Certified No. E209204 (UL1557)
600 V - 50 A 2-Phase Bridgeless PFC with Integral
Gate Driver and Protection
Very Low Thermal Resistance Using AlN DBC
Substrate
Built-in NTC Thermistor for Temperature Monitoring
Built-in Shunt Resistor for Current Sensing
Optimized for 20kHz Switchi ng Frequency
Isolation Rating: 25 00 Vrms/min.
Applications
2-Phase Bridgeless PFC Converter
Related Source
AN-9041 - Bridgeless PFC SPM 3 Series Design
Guide
General Description
The FPDB50PH60 is a PFC SPM® 3 module provid ing a
fully-featured, high-performa nce Bridgeless PFC (Power
Factor Correction) input power stage for consumer,
medical, and industrial applications. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also
providi ng multiple on-module protection features
including under-voltage lockout, over-current shutdown,
thermal monitoring, and fault reporting. These modules
also feature high-performance output diodes and shunt
resistor for additional space savings and mounting
convenience.
Figure 1. Package Overview
Package Marking & Ordering Information
Device Device Marking Package Packing Type Quantity
FPDB50PH60 FPDB50PH60 SPMHA-027 Rail 10
©2005 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FPDB50PH60 Rev. C3
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
Integrated Power Functions
PFC converter for single-phase AC / DC power conversion.(please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
Fault signal: corresponding to OC and UV fault
Built-in thermistor: temperature monitoring
Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21 ) VAC-
(22 ) NSENSE
(23 ) N
(27 ) PR
(15 ) NC
(16) N C
(17) N C
(18) NC
(19) RTH
(20 ) VTH
(24 ) N
(25 ) R
(26 ) S
Case Temperature (TC)
D e te c ting P o in t
DBC Substrate
(7) CFOD
(8) CSC
(9) NC
(10 ) NC
(11 ) NC
(12) N C
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21 ) VAC-
(22 ) NSENSE
(23 ) NC
(27 ) PR
(15 ) NC
(16) N C
(17) N C
(18) NC
(19) RTH
(20 ) VTH
(24 ) N
(25 ) R
(26 ) S
Case Temperature (TC)
D e te c ting P o in t
DBC Substrate
(7) CFOD
(8) CSC
(9) NC
(10 ) NC
(11 ) NC
(12) N C
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21 ) VAC-
(22 ) NSENSE
(23 ) N
(27 ) PR
(15 ) NC
(16) N C
(17) N C
(18) NC
(19) RTH
(20 ) VTH
(24 ) N
(25 ) R
(26 ) S
Case Temperature (TC)
D e te c ting P o in t
DBC Substrate
(7) CFOD
(8) CSC
(9) NC
(10 ) NC
(11 ) NC
(12) N C
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21 ) VAC-
(22 ) NSENSE
(23 ) NC
(27 ) PR
(15 ) NC
(16) N C
(17) N C
(18) NC
(19) RTH
(20 ) VTH
(24 ) N
(25 ) R
(26 ) S
Case Temperature (TC)
D e te c ting P o in t
DBC Substrate
(7) CFOD
(8) CSC
(9) NC
(10 ) NC
(11 ) NC
(12) N C
(13) NC
(14) NC
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FPDB50PH60 Rev. C3
Pin Descriptions
Internal Equivalent Circuit
Figure 3. Internal Block Diagram
Notes:
1. Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions.
Pin Number Pin Name Pin Description
1V
CC Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
4IN
(R) Signal Input for Low-Side R-Phase IGBT
5IN
(S) Signal Input for Low-Side S-Phase IGBT
6V
FO Fault Output
7C
FOD Capacitor for Fault Output Duration Selection
8C
SC Capacitor(Low-Pass Filter) for Over-Current Detection
19 R(TH) Series Resistor for The Use of Thermistor
20 V(TH) Thermistor Bias Voltage
21 VAC- Current Sensing Terminal
22 NSENSE Current Sensing Reference Terminal
24 N Negative Rail of DC-Link
25 R Output for R-Phase
26 S Output for S-Phase
27 PRPositive Rail of DC-Link
3, 9~18, 23 NC No Connection
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
OUT(S)
OUT(R)
(20) VTH
(19) RTH
(8) C SC
(7) C FOD
(6) VFO
(5) I N (S)
(4) I N (R)
(2) C OM
(1) VC C
(27) PR
(26) S
(25) R
(23) NC
(22) NSENSE
(21) VAC-
Shunt
Resistor
NTC
Thermistor
Q1 Q2
D1
D3
D2
D4
(24) N
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FPDB50PH60 Rev. C3
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Converter Part
Notes:
2. The maximum junction temperature rating of the power chips integrated within the PFC SPM® product is 150 C(@TC 100C). However, to insure safe operation of the PFC
SPM product, the average junction temperature should be limited to TJ(ave) 125C (@TC 100C)
Control Part
Total System
Thermal Resistance
Notes :
3. For the measurement point of case temperature(TC), please refer to Figure 2.
Symbol Item Condition Rating Unit
ViSupply Voltage Applied between R - S 264 Vrms
Vi(Surge) Supply Voltage (Surge) Applied between R - S 500 V
VPN Output Voltage Applied between P - N 450 V
VPN(Surge) Output Voltage (Surge) Applied between P - N 500 V
VCES Collector - Emitter Voltage 600 V
IiInput Current (100% Load) TC < 95°C, Vi = 220 V, VPN = 390 V,
VPWM = 20 kHz 30 A
Ii(125%) Input Current (125% Load) TC < 95°C, Vi = 220V , VPN = 390 V,
VPWM = 20 kHz, 1 min Non-Repetitive 37.5 A
PCCollector Dissipation TC = 25°C per IGBT 143 W
PRSH Power Rating of Shunt Resistor TC < 125°C 2 W
TJOperating Junction Temperature (Note 2) -20 ~ 125 °C
Symbol Item Condition Rating Unit
VCC Control Supply Voltage Applied between VCC - COM 20 V
VIN Input Signal Voltage Applied between IN - COM -0.3 ~ 17.0 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V
IFO Fault Output Current Sink Current at VFO Pin 5 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V
Symbol Item Condition Rating Unit
TCModule Case Operation Temperature -20 ~ 100 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate 2500 Vrms
Symbol Item Condition Min. Typ. Max. Unit
R(j-c)Q Junction to Case Thermal Resistance
(Referenced to PKG Center) IGBT - - 0.7 °C/W
R(j-c)HD High-Side Diode - - 1.5 °C/W
R(j-c)LD Low-Side Diode - - 0.85 °C/W
©2005 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FPDB50PH60 Rev. C3
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Converter Part
Notes:
4. tON and tOFF include the propagation delay of the internal drive IC . tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Item Condition Min. Typ. Max. Unit
VCE(SAT) IGBT Saturation Voltage VCC = 15 V, VIN = 5 V, IC = 50 A - 2.8 3.2 V
VFH High-Side Diode Voltage IF = 50 A - 2.1 2.7 V
VFL Low-Side Diode Voltage IF = 50 A - 1.3 1.7 V
tON Switching Times VPN = 400 V, VCC = 15 V, IC = 50 A
VIN = 0 V 5 V, Inductive Load
(Note 4)
- 550 - ns
tC(ON) - 200 - ns
tOFF - 430 - ns
tC(OFF) - 180 - ns
trr -60-ns
Irr -6-A
RSENSE Current-Sensing Resistor 1.8 2.0 2.2 m
ICES Collector - Emitter
Leakage Current VCE = VCES - - 250 A
tON tC(ON)
trr
Irr
10% of IC
100% of IC
90% of IC
120% of IC
10% of VCE
(a ) T u rn -o n
tOFF
tC(OFF)
(b ) T u rn-o ff
IC
VCE
VCE
IC
VIN VIN
10% of VCE
10% of IC
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FPDB50PH60 Rev. C3
Control Part
Notes:
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Figure 5. R-T Curve o f the Built-in Thermistor
Recommended Operating conditions
Symbol Item Condition Min. Typ. Max. Unit
IQCCL Quiescent VCC Supply Current VCC = 15 V, IN = 0 V VCC - COM - - 26 mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V
VSC(ref) Over-Current Trip Level VCC = 15 V 0.45 0.50 0.55 V
UVCCD Supply Circuit Under-Voltage
Protection Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.2 V
tFOD Fault-Out Pulse Width CFOD = 33 nF (Note 5) 1.4 1.8 2.0 ms
VIN(ON) ON Threshold Voltage Applied between IN - COM 3.0 - - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
RTH Resistance of Thermistor at TC = 25°C (See Figure 5) - 50 - k
at TC = 80°C (See Figure 5) - 5.76 - k
Symbol Item Condition Min. Typ. Max. Unit
VIInput Supply Voltage Applied between R - S 180 - 264 Vrms
VPN Output Voltage Applied between P - N - 280 400 V
VCC Control Supply Voltage Applied between VCC - COM 13.5 15.0 16.5 V
dVCC/dt Control Supply Variation Applied between IN - COM -1 - 1 V/s
fPWM PWM Input Signal TC 100°C, TJ 125°C, per IGBT - 20 - kHz
R-T G raph
0
20
40
60
80
100
120
20 30 40 50 60 70 80 90 100 110 120 130
Tem perature [C]
Resistance [k]
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FPDB50PH60 Rev. C3
Mechanical Characteristics and Ratings
Figure 6. Flatness Measurement Position
Item Condition Min. Typ. Max. Units
Mounting Torque Mounting Screw: M3 Recommended 0.62 N•m 0.51 0.62 0.72 N•m
Device Flatness See Figure 6 0 - +120 m
Weight - 15.00 - g
(+)
(+)
(+)
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FPDB50PH60 Rev. C3
Time Charts of Protective Function
P1 : Normal operation: IGBT ON and conducting current.
P2 : Under-voltage detection.
P3 : IGBT gate interrupt.
P4 : Fault signal generation.
P5 : Under-voltage reset.
P6 : Normal operation: IGBT ON and conducting current.
Figure 7. Under-V olta g e Prote c t io n
P1 : Normal operation: IGBT ON and conducting current.
P2 : Over current detection.
P3 : IGBT gate interrupt / fault signal generation.
P4 : IGBT is slowly turned off.
P5 : IGBT OFF signal.
P6 : IGBT ON signal: but IGBT cannot be turned on during the fault output activation.
P7 : IGBT OFF state.
P8 : Fault output reset and normal operation start.
Figure 8. Over-Current Protection
In te rn a l IGB T
Ga te -Emitte r Vo lta g e
Input S ignal
O utput Current
Fault O utput S ignal
Control S upply Voltage
P1
P2
P3
P4
P6
P5
UV
detect
UV
reset
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FPDB50PH60 Rev. C3
Figure 9. Application Example
Notes:
6. For the over-current protection, please set time constant in the range 3 ~ 4 s.
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
OUT(S)
OUT(R)
VTH
RTH
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
PR
S
R
N
NSENSE
VAC-
Shunt
Resistor
NTC
Thermistor
MCU
or
Controller
+5 V
Vac
3-Phase
Inverter
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FPDB50PH60 Rev. C3
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf
FPDB50PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FPDB50PH60 Rev. C3
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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