MOTOROLA SC {DIODES/OPTO} ~ =o DES eae7255 0079237 7? BP pasis = Triacs SC250( )3 Bidirectional Triode Thyristors $C251 ... designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls, - TRIACs motor controls, welding equipment and power switching systems; or wherever 15 AMPERES RMS full-wave, silicon gate controlled solid-state devices are needed. 200 thru 600 VOLTS e All Diffused and Glass Passivated Junctions for Greater Stability Pressfit, Stud and Isolated Stud Packages @ Gate Triggering Guaranteed In Ail 3 Quadrants MT2 o_o mm G MAXIMUM RATINGS Rating Symbol Value Unit Repetitive Peak Off-State Voltage VDRM Volts $C251B, SC250B, SC250B3 200 $C251D, SC250D, SC250D3 400 SC251M, SC250M, SC250M3 600 CASE 174.04 SC251N, SC250N 800 {TO-203) RMS On-State Current ITIRMS) 15 Amps eee Peak Non-Repetitive Surge Current ITSM 100 Amps PRESS FIT {One Full Cycle, 60 Hz) Circuit Fusing Considerations it A2s t=1ms 20 = 83 ms 41.5 Peak Gate Power PEM 10 Watts CASE 175-03 Average Gate Power PG(AV) 0.5 Watt STYLE 3 Peak Gate Power (Pulse Width = 10 ps) Iam 2 Amps ee Operating Junction Temperature Range Ty 40 to +115 C Storage Temperature Range Tstg ~40 to +125 C Stud Torque _ 30 in. Ib, THERMAL CHARACTERISTICS Characteristic Symbol Max Unit CASE 235-03 Thermal Resistance, Junction to Case Rec C seoeot 3 $C250, SC251 2 " LA SC250( )3 2.3 ISOLATED STUD Fy 3-312 MOTOROLA SC LDIODES/OPTOT .- ol DE ff psu7255 do079236 4 i FASTIS $C250 e SC250( )3 SC251 ELECTRICAL CHARACTERISTICS (Tc = +25C unless otherwise noted. Values apply for either polarity of Main Terminal 2 Characteristics referenced to Main Terminal 1.) Characteristic Symbol Min Typ Max Unit Peak Forward or Reverse Blocking Current lpRM: RRM (Rated Vprm or Var, gate open) Tc = 25C _ 10 BA To = +115C _ . 0.5 mA Peak On-State Voltage VIM - - 1.65 Volts (tm = 214, Pulse Width = 1 ms, Duty Cycle < 2%) : Critical Rate of Rise of Off-State Voltage dv/dt 100 _ = Vins : (Rated Vopr, Gate Open-Circuited, : Exponential Waveform) Te = +1186C Critical Rate-of-Rise of Commutating Off-State Voltage, Note 1 dv/dt(c) Vips (it(RMs) = Rated RMS On-State Current, Vp = Vorm) (Gate Open-Circuited, Commutating di/dt = 8 A/ms) $C250, SC251 Tc = +84C 4 - _ SC250( }3 To = +78C 4 I DC Gate Trigger Current (Continuous dc) IGT mAdc : (Vp = 12 Vde) : MT2(+), G(+); MT2(), G(-}; RL = 100 Ohms _ _ 50 MT2(+), G(); RL = 50 Ohms _ _ 50 DC Gate Trigger Current (Continuous dc) IGT mAdc (Vp = 12 Vde, Te = 40C) MT2(+), G(+); MT2{), G(); RL = 50 Ohms ~ _ 80 MT2(+), G(); RL = 25 Ohms _- 80 DC Gate Trigger Voltage (Continuous dc) Ver Vde (Vp = 12 Vdc) MT2(+), G(+); MT2(), G(); RL = 100 Ohms _ ~ 25 MT2(+), G(); RL = 50 Ohms _ - 25 DC Gate Trigger Voltage (Continuous dc) VGT Vdc (Vp = 12 Vde, Tc = 40C) MT2(+), G(+); MT2(), G{); RL = 50 Ohms _ 35 MT2(+), G(}; RL = 25 Ohms _ 35 DC Gate Non-Trigger Voltage Vep 0.20 _ _ Vde (Vp = Rated Vprm. RL = 1K Ohms, To = 115C) All Trigger Modes Holding Current ly mAdc (Vp = 24 Vde, Peak Initiating Current = 0.5 A, Pulse Width = 0.1 to 10 ms, Gate Trigger} (Source = 7 V, 20 Ohms} Tc = +25C _ _ 50 Tc = -40C _ - 100 Latching Current IL mAdc (Vp = 24 Vde, Gate Trigger Source = 15 V, 100 Ohms, Pulse Width = 50 ys, 5 ps Maximum Rise and Fall Times) : MT2(+), G+); MT2(), G(-); MT2(+), G(-} Tc = 26C _ _ 100 : MT2(+}, G+); MT2(), G(); MT2(+), G(-} To = 40C =_ 200 FIGURE 1 CURRENT DERATING FIGURE 2 MAXIMUM ON-STATE POWER DISSIPATION FULL ys 11500 FUEL Tc, MAX!HUM ALLOWABLE CASE TEMPERATURE (2C} Play), AVERAGE POWER DISSIPATION (WATTS} SINE WAVE 0 4 fy W 16 0 4 8 2 IT(fims), BS AVERAGE ON STATE CURRENT (AMP) ITiAms), RUS ONSTATE CUARENT (AMP) Cn mes nmamnses + MOTOROLA THYRISTOR DEVICE DATA 3-313