MLCE6.5 - MLCE170A Available 1500 Watt Low Capacitance Transient Voltage Suppressor Screening in reference to MIL-PRF-19500 available DESCRIPTION This high-reliability plastic encapsulated Transient Voltage Suppressor (TVS) diode series for thru-hole mounting includes a rectifier diode element in series and in the opposite direction. This allows it to present a very low (< 100 pF) capacitance to the system it is protecting (see Figure 2). The low capacitance of these devices makes them particularly useful for protecting lines carrying high frequency signals. They are also useful in protecting from the secondary effects of lightning in airborne avionics per IEC61000-4-5, RTCA/DO-160G, and ARINC 429. If bidirectional transient capability is required, two of these low capacitance TVS devices may be used in parallel and opposite directions (anti-parallel) for complete ac protection. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * * * * High reliability with fabrication and assembly lot traceability. All devices are 100% surge tested. Unidirectional construction. For bidirectional applications, use two in anti-parallel (see Figure 4). Suppresses transients up to 1500 watts @10/1000s (see Figure 1). Working standoff voltage (V WM ) range 6.5 V to 170 V. 5% and 10% tolerance options available Clamps transients in less than 100 pico seconds.* 3 lot norm screening performed on standby current I D . Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B. Screening options available in reference to MIL-PRF-19500. See Part Nomenclature below for all available options, and to our Hi-Rel Non-Hermetic Products brochure on our web site for more details. * RoHS compliant versions available. Case 1 Package Also available in: SMCG & SMCJ package (tabbed surface mounts) SMCG(J)LCE6.5 - SMCG(J)LCE170 *measurement limitation APPLICATIONS / BENEFITS * * * * * * * Protection from switching transients and induced RFI. Low capacitance for data line protection to 1 MHz. Protection for fast data rate lines in aircraft up to: RTCA/DO-160G - level 5 Waveform 4 and Level 2 Waveform 5A in (also see MicroNote 130) ARINC 429, Part 1, paragraph 2.4.1.1 with bit rates of 100 kb/s. Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4. Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance: Class 1: MLCE6.5A to MLCE170A Class 2: MLCE6.5A to MLCE150A Class 3: MLCE6.5A to MLCE70A Class 4: MLCE6.5A to MLCE36A Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance: Class 1: MLCE6.5A to MLCE90A Class 2: MLCE6.5A to MLCE45A Class 3: MLCE6.5A to MLCE22A Class 4: MLCE6.5A to MLCE11A Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance: Class 2: MLCE6.5A to MLCE20A Class 3: MLCE6.5A to MLCE10A RF01009, Rev. B (5/7/13) (c)2013 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 MLCE6.5 - MLCE170A MAXIMUM RATINGS @ 25 C unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Lead Peak Pulse Power dissipation @ 25 C (at 10/1000 s, (2) see Figures 1, 2, and 3) Rated Average Power Dissipation T L = +40 C (1) T A = +25 C Solder Temperature @ 10 s Symbol T J and T STG R JL P PP Value -65 to +150 22 1500 Unit C C/W W P M(AV) 5.0 1.52 260 W T SP o C Notes: 1. At 3/8 inch (10 mm) from body, or 82 C/W junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width 1 mm, length 25mm. 2. With a impulse repetition rate of 0.01% or less. TVS devices are not typically used for dc power dissipation and are instead operated at V WM except for transients that briefly drive the device into avalanche breakdown (V BR to V C region) of the TVS element. Also see Application Schematics for further protection details in rated peak power for unidirectional and bidirectional configurations respectively. MECHANICAL and PACKAGING * * * * * * * CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026. MARKING: Part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296 (add "TR" suffix to part number). Consult factory for quantities. WEIGHT: Approximately 1.5 grams. See Package Dimensions on last page. PART NOMENCLATURE M LC E 6.5 A Reliability Level M MA MX MXL *(see High Reliability Non-Hermetic Product Portfolio) e3 RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Tolerance Level A = +/- 5% Blank = +/- 10% Reverse Stand-Off Voltage (see Electrical Characteristics table) Low Capacitance Rated Encapsulated Plastic Package RF01009, Rev. B (5/7/13) (c)2013 Microsemi Corporation Page 2 of 5 MLCE6.5 - MLCE170A SYMBOLS & DEFINITIONS Definition Symbol I (BR) ID IF I PP P PP VC V (BR) V WM Breakdown Current: The current used for measuring breakdown voltage V (BR) . Standby Current: The current at the rated standoff voltage V WM . Forward Current: The forward current dc value, no alternating component. Peak Impulse Current: The peak current during the impulse. Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I PP . Clamping Voltage: The maximum clamping voltage at specified I PP (peak pulse current) at the specified pulse conditions. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range. ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise stated MICROSEMI Part Number MLCE6.5A MLCE7.0A MLCE7.5A MLCE8.0A MLCE8.5A MLCE9.0A MLCE10A MLCE11A MLCE12A MLCE13A MLCE14A MLCE15A MLCE16A MLCE17A MLCE18A MLCE20A MLCE22A MLCE24A MLCE26A MLCE28A MLCE30A MLCE33A MLCE36A MLCE40A MLCE43A MLCE45A MLCE48A MLCE51A MLCE54A MLCE58A MLCE60A MLCE64A MLCE70A MLCE75A MLCE80A MLCE90A MLCE100A MLCE110A MLCE120A MLCE130A MLCE150A MLCE160A MLCE170A Working Stand-Off Voltage V WM (Note 1) Volts 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 80 90 100 110 120 130 150 160 170 Breakdown Voltage V (BR) @ I (BR) Volts MIN 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 88.7 100 111 122 133 144 167 178 189 MAX 7.98 8.60 10.2 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92.1 98.0 111 123 135 147 159 185 197 209 mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Stanby Current I D @ V WM Maximum Clamping Voltage V C @ I PP Maximum Peak Pulse Current I PP Maximum Capacitance C @ 0 Volts, f = 1 MHz Working Inverse Blocking Voltage V WIB Inverse Blocking Leakage Current I IB Peak Inverse Blocking Voltage V PIB A 1000 500 250 100 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Volts 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.5 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 129 146 162 178 193 209 243 259 275 Amps 100 100 100 100 100 97 88 82 75 70 65 61 57 54 51 46 42 39 36 33 31 28.1 25.8 23.3 21.6 20.6 19.4 18.2 17.2 16.0 15.5 14.6 13.3 12.4 11.6 10.3 9.3 8.4 7.8 7.2 6.2 5.8 5.4 pF 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 90 90 90 90 90 90 90 90 90 90 90 90 90 Volts 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 150 150 150 150 150 150 150 150 150 150 150 300 300 300 300 300 300 300 300 A 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Volts 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 200 200 200 200 200 200 200 200 200 200 400 400 400 400 400 400 NOTE 1: TVS are normally selected according to the reverse "standoff voltage" (V WM ) which should be equal to or greater than the dc or continuous peak operating voltage level. RF01009, Rev. B (5/7/13) (c)2013 Microsemi Corporation Page 3 of 5 MLCE6.5 - MLCE170A PPP - Peak Pulse Power - kW GRAPHS Pulse Time (tw) in s FIGURE 1 Peak Pulse Power vs Pulse Time (tw) in s RF01009, Rev. B (5/7/13) (c)2013 Microsemi Corporation Page 4 of 5 MLCE6.5 - MLCE170A PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for information only. 3. The major diameter is essentially constant along its length. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Symbol BD BL LD LL Dimensions Inches Millimeters Min Max Min Max 0.190 0.360 0.038 1.10 0.205 0.375 0.042 1.625 4.826 9.146 0.958 27.9 5.207 9.527 1.074 41.28 APPLICATION SCHEMATICS The TVS low capacitance device configuration is shown in figure 2. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 3. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage V C . The Microsemi recommended rectifier part number is the "ELCR80" for the application in figure 3. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in figure 3 and 4 will both result in twice the capacitance of figure 2. FIGURE 2 TVS with internal Low Capacitance Diode RF01009, Rev. B (5/7/13) FIGURE 3 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) (c)2013 Microsemi Corporation FIGURE 4 Optional Bidirectional configuration (two TVS devices in anti-parallel) Page 5 of 5