RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 1 of 5
MLCE6.5 – MLCE170A
Available 1500 Watt Low Capacitance
Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This high-reliability plastic encapsulated Transient Voltage Suppressor (TVS) diode series for thru-hole
mounting includes a rectifier diode element in series and in the opposite direction. This allows it to
present a very low (< 100 pF) capacit anc e to the syste m it is prote ctin g (s ee Figure 2). The low
capacitance of these devices makes them particularly useful for protecting lines carrying high frequency
signals. They are also useful in protecting from the secondary effects of lightning in airborne avionics per
IEC61000-4-5, RTCA/DO-160G, and ARINC 429. If bidirectional transient capability is required, two of
these low capacitance TVS devices may be used in parallel and opposite directions (anti-parallel) for
complete ac protection.
Case 1 Package
Also available in:
SMCG & SMCJ
package
(tabbed surface mounts)
SMCG(J)LCE6.5 –
SMCG(J)LCE170
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• High reliability with fabrication and assembly lot traceability.
• All devices are 100% surge tested.
• Unidirectional construction. For bidirectional applications, use two in anti-parallel (see Figure 4).
• Suppresses transients up to 1500 watts @10/1000μs (see Figure 1).
• Working standoff voltage (VWM) range 6.5 V to 170 V.
• 5% and 10% tolerance options available
• Clamps transients in less than 100 pico seconds.*
• 3σ lot norm screening performed on standby current ID.
• Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
• Screening options available in reference to MIL-PRF-19500. S ee Part Nomenclature below for all
available options, and to our Hi-Rel Non-Hermetic Products brochure on our web site for more
details.
• RoHS compliant versions available.
*measure ment li mita tion
APPLICATIONS / BENEFITS
• Protect ion from switch ing tr an sien ts and indu ced RFI.
• Low capacitan ce for dat a line prote ctio n to 1 MH z .
• Protect ion for fast data rate lines in aircraft up to:
RTCA/DO-160G – level 5 Waveform 4 and Lev el 2 Waveform 5A in (also see MicroNote 130)
ARINC 429, Part 1, paragraph 2.4.1.1 with bit rates of 100 kb/s.
• Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
• Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
Class 1: MLCE6.5A to MLCE170A
Class 2: MLCE6.5A to MLCE150A
Class 3: MLCE6.5A to MLCE70A
Class 4: MLCE6.5A to MLCE36A
• Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
Cla ss 1: MLCE6.5A to MLCE90A
Class 2: MLCE6.5A to MLCE45A
Class 3: MLCE6.5A to MLCE22A
Class 4: MLCE6.5A to MLCE11A
• Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
Class 2: MLCE6.5A to MLCE20A
Class 3: MLCE6.5A to MLCE10A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 2 of 5
MLCE6.5 – MLCE170A
MAXIMUM RATINGS @ 2 5 ºC unless otherwise stated
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
ºC
Thermal Resi stan ce Jun cti on-to-Lead (1)
RӨJL
22
ºC/W
Peak Pulse Power dissipation @ 25 ºC (at 10/1000 µs,
see Figures 1, 2, and 3 )
(2)
P
PP
1500
W
Rated Average Power Dissipation
L
(1)
P
M(AV)
5.0
1.52
W
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. At 3/ 8 inc h (10 mm) from body, or 82 ºC/W junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width
1 mm, length 25mm.
2. With a impulse repetition rate of 0.01% or less. TVS devices are not typically used for dc power dissipation and are instead operated at
≤ VWM except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see
Application Schematics for further protection details in rated peak power for unidirectional and bidirectional c onfigurations respectively.
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
• TERMINALS: Tin-lead or RoHS compli ant annealed matte-tin plating. Soldera ble to M IL-STD-750, method 2026.
• MARKING: Part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 1.5 gram s.
• See Package Dimensions on last page.
PART NOMENCLATURE
M LC E 6.5 A e3
Reliability Level
M
MA
MX
MXL
*(see High Reliability
Non-Hermetic Product
Portfolio)
Low Capacitance
Rated
RoHS Compli ance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Tolerance Level
A = +/- 5%
Blank = +/- 10%
Reverse Stand-Off Voltage
(see Electrical Characteristics
table)
Encapsulated Plastic Package
RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 3 of 5
MLCE6.5 – MLCE170A
SYMBOLS & DEFINITIONS
Symbol
Definition
I(BR)
Breakdown Current: T he cur r ent used for measur i ng breakdown voltage V(BR).
ID
Standby Current: T he curr e nt at the rate d standoff voltage VWM.
IF
Forward Current: The forward current dc value, no alternating component.
IPP
Peak Impulse Current: The peak current during the impulse.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
VC Clamping Voltage: The maximum clamping voltage at specified IPP (peak pulse current) at the specified pul se
conditions.
V(BR)
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
MICROSEMI
Part Number
Working
Stand-Off
Voltage
VWM
(Note 1)
Volts
Breakdown Voltage
V(BR) @ I(BR)
Volts
Maximum
Stanby
Current
ID @ VWM
µA
Maximum
Clamping
Voltage
VC @ IPP
Volts
Maximum
Peak Pulse
Current
IPP
Amps
Maximum
Capacitance
C @ 0 Volts,
f = 1 MHz
pF
Working
Inverse
Blocking
Voltage
VWIB
Volts
Inverse
Blocking
Leakage
Current
IIB
µA
Peak
Inverse
Blocking
Voltage
VPIB
Volts
MIN
MAX
mA
MLCE6.5A
MLCE7.0A
6.5
7.0
7.22
7.78
7.98
8.60
10
10
1000
500
11.2
12.0
100
100
100
100
75
75
10
10
100
100
MLCE7.5A
MLCE8.0A
7.5
8.0
8.33
8.89
10.2
9.83
10
1
250
100
12.9
13.6
100
100
100
100
75
75
10
10
100
100
MLCE8.5A
MLCE9.0A
8.5
9.0
9.44
10.0
10.4
11.1
1
1
50
10
14.4
15.4
100
97
100
100
75
75
10
10
100
100
MLCE10A
MLCE11A
10
11
11.1
12.2
12.3
13.5
1
1
5
5
17.0
18.2
88
82
100
100
75
75
10
10
100
100
MLCE12A
MLCE13A
12
13
13.3
14.4
14.7
15.9
1
1
5
5
19.9
21.5
75
70
100
100
75
75
10
10
100
100
MLCE14A
MLCE15A
14
15
15.6
16.7
17.2
18.5
1
1
5
5
23.2
24.4
65
61
100
100
75
75
10
10
100
100
MLCE16A
MLCE17A
16
17
17.8
18.9
19.7
20.9
1
1
5
5
26.0
27.6
57
54
100
100
75
75
10
10
100
100
MLCE18A
MLCE20A
18
20
20.0
22.2
22.1
24.5
1
1
5
5
29.2
32.4
51
46
100
100
75
75
10
10
100
100
MLCE22A
MLCE24A
22
24
24.4
26.7
26.9
29.5
1
1
5
5
35.5
38.9
42
39
100
100
75
75
10
10
100
100
MLCE26A
MLCE28A
26
28
28.9
31.1
31.9
34.4
1
1
5
5
42.1
45.5
36
33
100
100
75
75
10
10
100
100
MLCE30A
MLCE33A
30
33
33.3
36.7
36.8
40.6
1
1
5
5
48.4
53.3
31
28.1
100
100
75
75
10
10
100
100
MLCE36A
MLCE40A
36
40
40.0
44.4
44.2
49.1
1
1
5
5
58.1
64.5
25.8
23.3
100
100
75
75
10
10
100
100
MLCE43A
MLCE45A
43
45
47.8
50.0
52.8
55.3
1
1
5
5
69.4
72.7
21.6
20.6
100
100
150
150
10
10
200
200
MLCE48A
MLCE51A
48
51
53.3
56.7
58.9
62.7
1
1
5
5
77.4
82.4
19.4
18.2
100
100
150
150
10
10
200
200
MLCE54A
MLCE58A
54
58
60.0
64.4
66.3
71.2
1
1
5
5
87.1
93.6
17.2
16.0
100
100
150
150
10
10
200
200
MLCE60A
MLCE64A
60
64
66.7
71.1
73.7
78.6
1
1
5
5
96.8
103
15.5
14.6
90
90
150
150
10
10
200
200
MLCE70A
MLCE75A
70
75
77.8
83.3
86.0
92.1
1
1
5
5
113
121
13.3
12.4
90
90
150
150
10
10
200
200
MLCE80A
MLCE90A
80
90
88.7
100
98.0
111
1
1
5
5
129
146
11.6
10.3
90
90
150
300
10
10
200
200
MLCE100A
MLCE110A
100
110
111
122
123
135
1
1
5
5
162
178
9.3
8.4
90
90
300
300
10
10
200
400
MLCE120A
MLCE130A
120
130
133
144
147
159
1
1
5
5
193
209
7.8
7.2
90
90
300
300
10
10
400
400
MLCE150A
MLCE160A
150
160
167
178
185
197
1
1
5
5
243
259
6.2
5.8
90
90
300
300
10
10
400
400
MLCE170A
170
189
209
1
5
275
5.4
90
300
10
400
NOTE 1: TVS are normally selected according to the reverse “standoff voltage” (VWM) which should be equal to or greater than the dc or continuous
peak operating voltage level.
RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 4 of 5
MLCE6.5 – MLCE170A
GRAPHS
Pulse Time (tw) in µs
FIGURE 1
Peak Pulse Power vs Pulse Time (tw) in µs
PPP - Peak Pulse Power - kW
RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 5 of 5
MLCE6.5 – MLCE170A
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. The major diameter is essentially constant along its length.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in figure 2. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 3. In
applications where random high voltage trans ients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage c onducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clam ping voltage VC. The Microsemi recommended
rectifier part number is the “ELCR80” for the application in figure 3. If using two (2) low capacitance TVS devices in anti-parallel for
bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also
provided. The unidirectional and bidirectional configurations in figure 3 and 4 wil l both result in twice the capacitance of figure 2.
FIGURE 2 FIGURE 3 FIGURE 4
TVS with internal Low Optional Unidirectional Optional Bidirectional
Capacitanc e Dio de configuration (TVS and configuration (two TVS
separate rectifier diode devices in anti-parallel)
in parallel)
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
BD
0.190
0.205
4.826
5.207
BL
0.360
0.375
9.146
9.527
LD
0.038
0.042
0.958
1.074
LL
1.10
1.625
27.9
41.28