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Thank you for your cooperation and understanding, WeEn Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BYC8B-600 Rectifier diode ultrafast, low switching loss Product specification March 2001 1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC8B-600 SYMBOL * Extremely fast switching * Low reverse recovery current * Low thermal resistance * Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V k tab VF 1.85 V a 3 IF(AV) = 8 A trr = 19 ns (typ) APPLICATIONS * Active power factor correction * Half-bridge lighting ballasts * Half-bridge/ full-bridge switched mode power supplies. The BYC8B-600 is supplied in the SOT404 surface mounting package. PINNING PIN SOT404 DESCRIPTION 1 no connection 2 cathode1 3 anode tab 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current IFRM IFSM Tstg Tj CONDITIONS Tmb 110 C = 0.5; with reapplied VRRM(max); Tmb 82 C Repetitive peak forward current = 0.5; with reapplied VRRM(max); Tmb 82 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature MIN. MAX. UNIT - 600 600 500 8 V V V A - 16 A - 55 60 A A -40 - 150 150 C C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS minimum footprint, FR4 board MIN. TYP. MAX. UNIT - - 2.2 K/W - 50 - K/W 1 it is not possible to make connection to pin 2 of the SOT404 package March 2001 1 Rev 1.400 1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC8B-600 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 8 A; Tj = 150C IF = 16 A; Tj = 150C IF = 8 A; VR = 600 V VR = 500 V; Tj = 100 C - 1.4 1.7 2.0 9 1.1 1.85 2.3 2.9 150 3.0 V V V A mA IR Reverse current trr trr Reverse recovery time Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/s IF = 8 A; VR = 400 V; dIF/dt = 500 A/s IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 100C - 30 19 52 - ns ns trr Reverse recovery time - 32 40 ns Irrm Peak reverse recovery current - 1.5 5.5 A Peak reverse recovery current IF = 8 A; VR = 400 V; dIF/dt = 50 A/s; Tj = 125C IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 125C Irrm - 9.5 12 A Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/s - 8 10 V ID IL Vin Vin Vin = 400 V d.c. Vo = 400 V d.c. IR IF 150 uH typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. March 2001 2 Rev 1.400 1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss 25 Forward dissipation, PF (W) BYC8-600 BYC8B-600 Tmb(max) C 95 D = 1.0 Vo = 1.4 V Rs = 0.05625 Ohms dIF/dt 20 ID = IL 106 0.5 losses due to diode reverse recovery 0.2 15 Irrm ID 117 0.1 time 10 I tp D= T tp VD 139 5 T 0 128 0 2 t 4 6 8 10 Average forward current, IF(AV) (A) 150 12 Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x D. 0.25 Diode reverse recovery switching losses, Pdsw (W) 100 f = 20 kHz Tj = 125 C 0.2 VR = 400 V 12 A 8A 16 A 0.15 BYC8-600 Reverse recovery time, trr (ns) 12 A IF = 5 A 16 A 0.1 IF = 8 A Tj = 125 C VR = 400 V 0.05 BYC8-600 0 100 Rate of change of current, dIF/dt (A/us) 10 100 1000 Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C 7 16 A VR = 400 V 6 12 A 5 8 100 10 8A 3 2 1000 1000 Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. March 2001 BYC8-600 16 A Tj = 125 C VR = 400 V 1 100 Rate of change of current, dIF/dt (A/us) BYC8-600 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) IF = 5 A IF = 5 A 1 0 100 1000 Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. 4 Rate of change of current, dIF/dt (A/us) 3 Rev 1.400 1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC8B-600 dt t 15 rr typ time Q I I R 100% 10% s 5 rrm 0 Peak forward recovery voltage, Vfr (V) max 10 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 BYC8-600 Forward current, IF (A) Tj = 25 C Tj = 150 C 20 F 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25C and 150C. BYC8-600 100mA BYC8-600 Reverse leakage current (A) Tj = 25 C IF = 10 A 10mA 15 Tj = 125 C typ 100 C 1mA 10 75 C 100uA 50 C 5 25 C 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 1uA 200 Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. I 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj 10 F Transient thermal impedance, Zth j-mb (K/W) 1 time 0.1 VF PD 0.01 V D= tp T fr VF 0.001 1us time T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYC8 10s Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. Fig.11. Definition of forward recovery voltage Vfr March 2001 tp 4 Rev 1.400 1;3 Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC8B-600 MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.15. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.16. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". March 2001 5 Rev 1.400 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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