BYT 30PI-1000 (R) FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K e t le SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. o s b O - c u d ) s t( o r P Isolated DOP3I (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol (s) Parameter ct VRRM Repetitive Peak Reverse Voltage VRSM Non Repetitive Peak Reverse Voltage IFRM Repetive Peak Forward Current IF (RMS) o r P e du tp 10s RMS Forward Current Value Unit 1000 V 1000 V 375 A 70 A IF (AV) Average Forward Current Tc = 50C = 0.5 30 A IFSM Surge non Repetitive Forward Current tp = 10ms Sinusoidal 200 A Power Dissipation Tc = 50C 60 W - 40 to +150 C Value Unit 1.6 C/W t e l o s b O P Tstg Tj Storage and Junction Temperature Range THERMAL RESISTANCE Symbol Rth (j - c) Parameter Junction-case October 1999 - Ed: 2A 1/5 BYT 30PI-1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Test Conditions Min. Typ. Max. Unit 100 A 5 mA 1.9 V VR = VRRM Tj = 25C Tj = 100C VF IF = 30A Tj = 25C 1.8 Tj = 100C RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25C Min. Typ. Max. Unit ns IF = 1A diF/dt = - 15A/s VR = 30V 165 IF = 0.5A IR = 1A Irr = 0.25A 70 TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance) Symbol tIRM Test Conditions diF/dt = - 120A/s diF/dt = - 240A/s IRM Min. VCC = 200 V IF = 30A Lp 0.05H Tj = 100C See figure 11 diF/dt = -120A/s e t le diF/dt = - 240A/s o s b O - Pr uc Typ. od ) s t( Max. Unit 200 ns 19.5 A 120 22 TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance) Symbol C= VRP VCC Test Conditions Tj = 100C diF/dt = - 30A/s VCC = 200V Lp = 5H ) s ( ct IF = IF (AV) See figure 12 Min. Typ. Max. Unit 4.5 To evaluate the conduction losses use the following equations: VF = 1.47 + 0.010 IF P = 1.47 x IF(AV) + 0.010 IF2(RMS) u d o r P e Figure 1. Low frequency power losses versus average current t e l o s b O 2/5 Figure 2. Peak current versus form factor BYT 30PI-1000 Figure 3. Non repetitive peak surge current versus overload duration Figure 4. Thermal impedance versus pulse width Figure 5. Voltage drop versus forward current Figure 6. Recovery charge versus diF/dt- c u d e t le ) s ( ct u d o Figure 7. Recovery time versus diF/dt- ) s t( o r P o s b O - Figure 8. Peak reverse current versus diF/dt- r P e t e l o s b O 3/5 BYT 30PI-1000 Figure 9. Peak forward voltage versus diF/dt- Figure 10. Dynamic parameters versus junction temperature. Figure 11. Turn-off switching characteristics (without series inductance). e t le ) s ( ct u d o o s b O - Figure 12. Turn-off switching characteristics (with series inductance) r P e t e l o s b O 4/5 o r P c u d ) s t( BYT 30PI-1000 PACKAGE MECHANICAL DATA : Isolated DOP3I Plastic REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 0.020 0.028 2.7 2.9 0.106 0.114 15.8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 10.8 11.3 0.425 0.444 1.20 1.40 0.047 0.055 4.60 typ. 0.181 typ. A B C D E F G H K L N P R c u d e t le Cooling method: by conduction (method C) Marking: type number Weight: 18.84g Recommended torque value: 250cm. N Maximum torque value: 310cm. N ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5