MOTOROLA SC {DIODES/OPTOF O1 DE Pfe3u7255 o078984 & T T- 28-185 2N5164 Silicon Controlled Rectifiers thru Reverse Blocking Triode Thyristor 2N5171 . .. designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. . ; SCRs Supplied in Either Pressfit or Stud Package High Surge Current Rating Ipgny = 240 Amps OER oe @ Low On-State Voltage 1.2 V (Typ) @ IT = 20 Amps @ Practical Level Triggering and Holding Characteristics 40 mA (Max) and 50 mA (Max) @ Tc = 28C MAXIMUM RATINGS Rating Symbol Value Unit *Peak Forward and *Repetitive Reverse Blocking VpRM Volts Voltage, Notes 1 and 2 or 2N5164, 2N5168 VRAM 50 2N5165, 2N5169 200 2N5166, 2N5170 400 CASE 263-04 2N5167, 2N5171 600 STYLE 1 *Non-Repetitive Peak Reverse Blocking Voltage VRSM Volts 2N5168 thru 2N5171 2N5164, 2N5168 75 2N5165, 2N5169 300 2N5166, 2N5170 500 2N5167, 2N5171 700 On-State Current RMS t 20 Amps T(RMS) . CASE 310-02 Average On-State Current ltiAv) 13 Amps STVLE 1 (To = 67C) 2N5164 thru 2N5167 Circuit Fusing 12t 235 As (Ty = 40to + 100C, t < 8.3 ms) *Peak Non-Repatitive Surge Current l1sm 240 Amps (One cycle, 60 Hz, Ty = 40 to +100C) Preceded and followed by rated current and voltage *Peak Gate Power PGM 5 Watts (Maximum Pulse Width = 10 us) *Average Gate Power Pa(av) 0.5 Watt *Peak Forward Gate Current lom 2 Amps (Maximum Pulse Width = 10 zs) Peak Gate Voltage Vem 10 Volts *QOperating Junction Temperature Range Ty -40 to +100 C *Storage Tamperature Range Tstg | 40 to +150 C Stud Torque 30 in. fb. 2N5168-2N5171 *Indicatas JEDEC ragistered data. Notes: 1. Vor for all types can be applled on a continuous dec basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage appliad exceeds the rated blocking voltage. 2. Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode. - Shae, MOTOROLA THYRISTOR DEVICE DATA 3-59 MOTOROLA SC {DIODES/0PTO} 01 De feas7255 oo7aqas a i 6367255 MOTGROLA SC (DIODES/OPTO) OIE 78985 DT-2S4S> i 2N5164 thru 2N5171 THERMAL CHARACTERISTICS + Characteristic Symbol| Typ | Max Unit *Thermal Resistance, Junction to Case Rasc CW 2N5164, 65, 66, 67 1 1.6 2N5168, 69, 70, 71 11 1.6 . ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit *Peak Forward or Reverse Blocking Current ipRM- IRRM (Rated VporM or VaRM, gate open) Ty = 25C 10 pA Ty = 100C _ 5 mA Gate Trigger Current (Continuous dc), Note 1 IGT mA (Vp = 7 Vde, RL = 100 0) _ 40 VD = 7 Vde, RL = 100 0, Tc = 40C) 75 Gate Trigger Voltage (Continuous de) VeT Volts (Vp = 7 Vdc, gate open} _ 1.5 *(Vp = 7 Vde, RL = 100.0, To = ~40C} 2.5 *(Vp = Rated VpRm. RL = 1009, Ty = 100C) 0.2 - Peak On-State Voltage (Pulse Width = 1 ms max, duty cycle < 1%) VIM Volts (Itm = 204} _ 1.5 *(ItM = 41 A) 8 17 Holding Current I mA H (Vp = 7 Vde, gate open) _ 50 *(Vp = 7 Vde, gate open, Tc = 40C) _ 90 Typical Gate Controlled Turn-On Time (tg + t,) tgt 1 HS (ltM = 204, Ig7 = 40 mAde, Vp = Rated Vprm) Circuit Commutated Turn-Off Time tg Bs (itm = 10 A, IR = 10 A) 20 (lt = 104, IR = 10A, Ty = 100C) 30 (Vp = VpoRM = rated voltage) (dv/dt = 30 Vins) Critical Rate of Rise of Off-State Voltage dv/dt 50 Vins (Vp = Rated VpRm. Exponential Wave Form, Gate open, Ty = 100C) *Indicates JEDEC registered data. Note 1. Devices should not be operated with a positive bias applied to the gate concurrent with a nagative potential applied to the anode. ee MOTOROLA THYRISTOR DEVICE DATA 3-60 MOTOROLA SC {DIODES/OPTOT 6367255: MOTOROLA SC C(DIOBES/OPTO) 2N5164 thru 2N5171 O1 pe Pjuae7255 0078964 Q I O1E 78986 Dr ASTS i EFFECT OF TEMPERATURE UPON TYPICAL TRIGGER CHARACTERISTICS ume SAA BEE NE MeL FIGURE 1 GATE TRIGGER CURRENT 20 70 5.0 IgT,GATE TRIGGER CURRENT (mA) ~60 -40 -20 0 20 40 so 80 6100 120-140 Ty, JUNCTION TEMPERATURE (C} VT, GATE TRIGGER VOLTAGE (VOLTS) FIGURE 2 GATE TRIGGER VOLTAGE 0.9 STATE VOLTAGE =7V 0.8 07 0.6 0.5 04 0.3 -60 -40 = -20 9 20 40 60 = 80 100 120-140 Ty, JUNCTION TEMPERATURE (C) MAXIMUM ALLOWABLE NON-REPETITIVE SURGE CURRENT FIGURE 3 60 Hz SURGES PRIOR TO SURGE SCR OPERATED AT RATED LOAD CONDITIONS Ty=-409C to +100C {= 60 MHz ITs, PEAK SURGE CURRENT (AMP) je 1 cvcte->| 10 2.0 40 6.0 8.010 20 40 60 90100 NUMBER OF CYCLES AMS ON-STATE SURGE CURRENT (AMP) FIGURE 4 SUB-CYCLE SURGES 5090 Ty = -400 to +100C 400 300 NS DN r= 29602 | PAY 200 < 140 1.0 15 2.0 3.0 5.0 7.0 10 PULSE WIDTH (ms) MOTOROLA THYRISTOR DEVICE DATA 3-61 = MOTOROLA SC {LDIODES/OPTOT 6367255 MOTOROLA SC (DIODES/OPTO) 2N5164 thru 2N5171 FIGURE 5 GATE TRIGGER CHARACTERISTICS 20 ' = MAXIMUM ALLOWABLE FORWARD = GATE CURRENT Lg : Jikw igm = 2.0 AMP = ro 1.5 VOLTS 4 a = 074 eas | GATE VOLTAGE Pom =5.0W = os |2ze REQUIRED TRIGGER @ Ty = 25C = Eze 5 a a1 o = o3|Z2E7| necommenveo TRIGGER = = eee CURRENT 5 g2+e= = al o & zo 2 25 = 2 | 5 2 orl? ALL UNITS WILL TRIGGER AT ANY VOLTAGE 8 ES | AND CURRENT WITHIN THIS AREA =. o 0.07 (Te = 25C, VAK = 7.0 V) - 0.05 L 0.03 40 mA GATE CURRENT REQUIRED 002-4 TO TRIGGER ALL UNITS @ T = 25C QO MAXIMUM ALLOWABLE FORWARD GATE VOLTAGE Vgm = 10 VOLTS a 7 ool FRET 20 #30 40 50 60 70 80 90 10 Vg, GATE VOLTAGE {VOLTS) 01 DeEPeae7255 oo7a9a? 1 i O1E 78987) DB T+QS-1> FIGURE 6 EFFECT OF TEMPERATURE ON TYPICAL HOLDING CURRENT , OFF STATE VOLTAGE =7V 60-40-20 0 20 40 60 8b 6100s 120140 Ty, SUNCTION TEMPERATURE (C) DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE LOADS (f = 60 to 400 Hz, SINE WAVE) FIGURE 8 ON-STATE POWER DISSIPATION FIGURE 7 AVERAGE CURRENT DERATING (2 | LE a@= CONDUCTION ANGLE 100 S HALF-WAVE OPERATION | Pa ~ wu us 3 = eof N SS 2 & NY ON 22 a ike a INQ z< = NS | | zs Ee 80 KN N MN oz VKN \{e= CONDUCTION ANGLE Be 60 \ INQ == = 0 R = a= 39 a dc a3 > 70 $ = = 3 180 NY rE & 0 0 20 40 60 80 10 12 4 16 18 26 IT(AVp, AVERAGE ON-STATE CURRENT (AMP) 0 20 #40 60 80 0 12 14 16 18 = 20 IT{Av). AVERAGE ON-STATE CURRENT (AMP) 3-62 MOTOROLA THYRISTOR DEVICE DATA MOTOROLA SC LDIODES/OPTOF 6367255 2N5164 thru 2N5171 MOTGROLA SC (CDIODES/QPTO) OL de Bu3e7e5 O1E 78ses FIGURE 9 ON-STATE CHARACTERISTICS it, INSTANTANEQUS ON-STATE CURRENT (AMP) 0.26 0.6 1.0 1.5 2.0 T= 1000 Ty = 2590 25 3.0 vT. INSTANTANEOUS ON-STATE VOLTAGE (VOFTS) FIGURE 10 TYPICAL THERMAL RESISTANCE OF PLATES Units mounted in center of square sheets of 1/8-inch thick bright aluminum. Heat sinks held vertically in still air. (Heat sink area is twice area of one HEAT SINK AREA (SQUARE INCHES) 1.0 16.2.0 3.0 5.0 7.0 Rega. THERMAL RESISTANCE {C/W} FIGURE 11 MOUNTING DETAILS FOR PRESSFIT THYRISTORS Chamfer LP 01 Nom. 501 a titom | I~ 208 Dia. / Heat Sink 24 Heat Sink Mounting Additional Rivet Heat Sink Plate Intimate Complete . Contact Area Knurt Contact Thin Chassis Area Thin-Chassis Mounting MOTOROLA THYRISTOR DEVICE DATA 3-63 5 9078988 3 z= DT - 5 -/5 35 3.75 i