Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SiGe RF IC
IN A 8-PIN LEAD-LESS MINIMOLD
Document No. PU10538EJ01V0DS (1st edition)
Date Published October 2004 CP(K)
NPN SiGe RF ANALOG INTEGRATED CIRCUIT
PA901TU
DESCRIPTION
The
PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and
other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency,
high gain, low power consumption.
The device is packaged in surface mount 8-pin lead-less minimold plastic package.
The device is fabricated with our SiGe HBT process UHS2-HV technology.
FEATURES
• Output Power : Pout = 19 dBm @ Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz
• Low Power : IC = 90 mA @ Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz
• Single Power Supply Operation : VCE = 3.6 V
• Built-in bias circuit
• 8-pin lead-less minimold (2.0 2.2 0.5 mm)
APPLICATIONS
• 5.8 GHz cordless phone
• 5.8 GHz band DSRC (Dedicated Short Range Communication) system
• 5.8 GHz video transmitter
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
Marking
Supplying Form
PA901TU
PA901TU-A
50 pcs (Non reel)
8-pin lead-less
A901
• 8 mm wide embossed taping
PA901TU-T3
PA901TU-T3-A
5 kpcs/reel
minimold (Pb-Free)
• Pin 1, Pin 8 face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Data Sheet PU10538EJ01V0DS
PA901TU
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
4.5
V
Emitter to Base Voltage
VEBO
2
V
Collector Current of Q1
IC1
75
mA
Collector Current of Q2
IC2
250
mA
Bias Current
IBIAS
25
mA
Total Power Dissipation
Ptot Note
410
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Operating Ambient Temperature
TA
40 to +85
C
Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4)
THERMAL RESISTANCE (TA = +25C)
Parameter
Symbol
Test Conditions
Ratings
Unit
Channel to Ambient Resistance
Rth (j-a1) Note
150
C/W
Rth (j-a2)
Free Air
TBD
C/W
Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4)
RECOMMENDED OPERATING RANGE (All Parameter)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
VCE
3.6
4.5
V
Total Current
Itotal
90
300
mA
Input Power
Pin
3
+5
dBm
Data Sheet PU10538EJ01V0DS
3
PA901TU
ELECTRICAL CHARACTERISTICS (TA = +25C)
DC CHARACTERISTICS
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
60
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
120
nA
DC Current Gain
hFE Note
VCE = 3 V, IC = 6 mA
80
120
160
Current Ratio (IC (set) 1/IBIAS)
CR1
VCE = 3.6 V, VBE = VBIAS = 0.865 V
2
4.5
9
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
400
nA
DC Current Gain
hFE Note
VCE = 3 V, IC = 20 mA
80
120
160
Current Ratio (IC (set) 2/IBIAS)
CR2
VCE = 3.6 V, VBE = VBIAS = 0.865 V
8
10
13
(3) Bias Circuit
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Bias Circuit Current
IBIAS
VBIAS = 0.865 V
4
mA
Note Pulse measurement: PW 350
s, Duty Cycle 2%
IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
IC (set) 1 = CR1 IBIAS
= 4.5 IBIAS
(TYP.)
IC (set) 2 = CR2 IBIAS
= 4.5 IBIAS
(TYP.)
Data Sheet PU10538EJ01V0DS
PA901TU
ELECTRICAL CHARACTERISTICS (TA = +25C)
RF CHARACTERISTICS
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Insertion Power Gain (Q1)
S21e2
VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz
8.5
10.0
11.5
dB
Maximum Available Power Gain (Q1)
MAG1
VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz
13.5
15.0
dB
Output Power (Q1)
Pout1
VCE = 3.6 V, IC (set) = 12 mA,
f = 5.8 GHz, Pin = 3 dBm
10.2
11.2
dBm
Collector Current (Q1)
ICC1
VCE = 3.6 V, IC (set) = 12 mA,
f = 5.8 GHz, Pin = 3 dBm
20
mA
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Insertion Power Gain (Q2)
S21e2
VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz
2
3.5
5
dB
Maximum Available Power Gain (Q2)
MAG2
VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz
8.5
10.0
10.5
dB
Output Power (Q2)
Pout2
VCE = 3.6 V, IC (set) = 40 mA,
f = 5.8 GHz, Pin = 11 dBm
17.5
19.0
dBm
Collector Current (Q2)
ICC2
VCE = 3.6 V, IC (set) = 40 mA,
f = 5.8 GHz, Pin = 11 dBm
70
mA
(3) Q1 + Q2, 2 stage Amplifiers
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Output Power
Pout
VCE = 3.6 V, RBIAS = 680 ,
f = 5.8 GHz, Pin = 3 dBm Note
17.5
19.0
mA
Total Current
Itotal
VCE = 3.6 V, RBIAS = 680 ,
f = 5.8 GHz, Pin = 3 dBm Note
90
mA
Note by MEASUREMENT CIRCUIT 1
Data Sheet PU10538EJ01V0DS
5
PA901TU
MEASUREMENT CIRCUIT 1
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
IC (set) 1 = CR1 IBIAS
= 4.5 IBIAS (TYP.)
IC (set) 2 = CR2 IBIAS
= 4.5 IBIAS (TYP.)
Data Sheet PU10538EJ01V0DS
PA901TU
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Remarks
1. Substrate : 20 20 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18
m, gold flash
plating
2. Back side : GND pattern
3. : Through hole
USING THE EVALUATION BOARD
Symbol
Values
Symbol
Values
R1
680
C2
0.5 pF
R2
10
C3
0.5 pF
R3
10
C4
1.0 pF
R4
10
C5
0.75 pF
R5
10
C6
1.0 pF
L1
100 nH
C7
1.0 pF
L2
5.6 nH
C8
1.0 pF
L3
5.6 nH
C9
1.0 pF
L4
12 nH
C10
10 nF
C1
0.75 pF
C11
10 nF
Data Sheet PU10538EJ01V0DS
7
PA901TU
TYPICAL CHARACTERISTICS
(TA = +25C , VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
8 Data Sheet PU10538EJ01V0DS
PA901TU
PACKAGE DIMENSIONS
8-PIN LEAD-LESS MINIMOLD (UNIT: mm)
Remark ( ) : Reference value