PMF250XNEX - NXP SEMICONDUCTORS - Datasheet.Directory

PMF250XNE

30V N-channel Trench MOSFET

28 April 2016 Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323

(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•Low threshold voltage

•Very fast switching

•Trench MOSFET technology

•ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•Relay driver

•High-speed line driver

•Low-side loadswitch

•Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 30 V

VGS gate-source voltage

Tj = 25 °C

-12 - 12 V

IDdrain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 1 A

Static characteristics

RDSon drain-source on-state

resistance

VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C - 212 254 mΩ

[1] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for drain 6 cm2.

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 2 / 15

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

SC-70 (SOT323)

017aaa255

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMF250XNE SC-70 plastic surface-mounted package; 3 leads SOT323

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

PMF250XNE Z%W

[1] % = placeholder for manufacturing site code

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 3 / 15

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 30 V

VGS gate-source voltage

Tj = 25 °C

-12 12 V

VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 1 A

VGS = 4.5 V; Tamb = 25 °C [1] - 0.9 A

IDdrain current

VGS = 4.5 V; Tamb = 100 °C [1] - 0.5 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 4 A

[2] - 275 mWTamb = 25 °C

[1] - 342 mW

Ptot total power dissipation

Tsp = 25 °C - 1.1 W

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb = 25 °C [1] - 0.3 A

[1] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 4 / 15

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Fig. 2. Normalized continuous drain current as a

function of junction temperature

aaa-022729

VDS (V)

10-1 102

101

10-1

(A)

10-2

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

1 ms

10 ms

100 ms

100 µs

tp = 10 µs

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 397 457 K/Win free air

[2] - 318 366 K/W

Rth(j-a) thermal resistance

from junction to

ambient

t ≤ 5 s [2] - 256 294 K/W

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 5 / 15

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance

from junction to solder

point

- 102 117 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

017aaa378

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa379

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2 0.1

0.05

0.02

0.01

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V

VGSth gate-source threshold

voltage

ID = 250 µA; VDS=VGS; Tj = 25 °C 0.75 1 1.25 V

IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA

IGSS gate leakage current

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA

VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C - 212 254 mΩ

VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C - 346 416 mΩ

RDSon drain-source on-state

resistance

VGS = 2.5 V; ID = 0.8 A; Tj = 25 °C - 269 321 mΩ

gfs forward

transconductance

VDS = 10 V; ID = 0.9 A; Tj = 25 °C - 3.5 - S

Dynamic characteristics

QG(tot) total gate charge - 1.05 1.65 nC

QGS gate-source charge - 0.15 - nC

QGD gate-drain charge

VDS = 15 V; ID = 0.9 A; VGS = 4.5 V;

Tj = 25 °C

- 0.27 - nC

Ciss input capacitance - 81 - pF

Coss output capacitance - 13 - pF

Crss reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 8.5 - pF

td(on) turn-on delay time - 7 - ns

trrise time - 14 - ns

td(off) turn-off delay time - 17 - ns

tffall time

VDS = 15 V; ID = 0.9 A; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 6 - ns

Source-drain diode

VSD source-drain voltage IS = 0.3 A; VGS = 0 V; Tj = 25 °C - 0.7 1.2 V

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 7 / 15

VDS (V)

0 431 2

aaa-022730

(A)

2.0 V

VGS = 1.6 V

1.8 V

2.2 V

2.5 V

2.6 V4.5 V 3.0 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-022731

10-5

10-4

10-3

10-2

(A)

10-6

VGS (V)

0 2.01.50.5 1.0

min typ max

VDS = 5 V

Tj = 25 °C

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

VDS (V)

0 431 2

aaa-022732

0.4

0.8

1.2

RDSon

(Ω)

2.0 V

VGS = 4.5 V

1.8 V 2.2 V 2.5 V1.6 V

3.0 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

aaa-022733

VGS (V)

0 1284

0.4

0.6

0.2

0.8

1.0

RDSon

(Ω)

Tj = 150 °C

Tj = 25 °C

ID = 0.9 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 8 / 15

VGS (V)

0 321

aaa-022734

(A)

Tj = 150 °C

Tj = 25 °C

VDS > ID x RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

aaa-022735

1.0

0.5

1.5

2.0

Fig. 11. Normalized drain-source on-state resistance

as a function of ambient temperature; typical

values

Tj (°C)

-60 1801200 60

aaa-022736

1.0

0.5

1.5

2.0

VGS(th)

(V)

min

typ

max

ID = 250 μA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

ambient temperature

VDS (V)

10-1 102

101

aaa-022737

102

103

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 9 / 15

aaa-022738

QG (nC)

0 1.51.00.5

VGS

(V)

VDS = 15 V; ID = 0.9 A

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

VSD (V)

0 1.00.80.4 0.60.2

aaa-022739

0.1

0.2

0.3

(A)

Tj = 150 °C

Tj = 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

006aaa812

duty cycle δ =

Fig. 17. Duty cycle definition

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 10 / 15

12. Package outline

UNIT A1

max bpc D E e1HELpQ wv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15 0.65

1.3 2.2

2.0

0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

1 2

Plastic surface-mounted package; 3 leads SOT323

04-11-04

06-03-16

Fig. 18. Package outline SC-70 (SOT323)

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 11 / 15

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot323_fr

2.65

2.35 0.6

(3×)

0.5

(3×)

0.55

(3×)

1.325

1.85

1.3

Dimensions in mm

Fig. 19. Reflow soldering footprint for SC-70 (SOT323)

sot323_fw

3.65 2.1

1.425

(3×)

4.6

(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Fig. 20. Wave soldering footprint for SC-70 (SOT323)

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 12 / 15

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMF250XNE v.1 20160428 Product data sheet - -

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 13 / 15

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

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customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

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Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

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Notwithstanding any damages that customer might incur for any reason

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Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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inclusion and/or use of Nexperia products in such equipment or

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

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customer’s applications and products planned, as well as for the planned

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associated with their applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

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necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 14 / 15

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

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Non-automotive qualified products — Unless this data sheet expressly

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the product is not suitable for automotive use. It is neither qualified nor

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Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

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standard warranty and Nexperia’s

product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia PMF250XNE

30V N-channel Trench MOSFET

PMF250XNE All information provided in this document is subject to legal disclaimers.

Product data sheet 28 April 2016 15 / 15

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................4

10 Characteristics .......................................................6

11 Test information .....................................................9

12 Package outline ................................................... 10

13 Soldering .............................................................. 11

14 Revision history ................................................... 12

15 Legal information .................................................13

15.1 Data sheet status ............................................... 13

15.2 Definitions ...........................................................13

15.3 Disclaimers ......................................................... 13

15.4 Trademarks ........................................................ 14

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

28 April 2016