BAT 64...W
Semiconductor Group Sep-07-19981
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
1
3
VSO05561
2
BAT 64-05W BAT 64-06WBAT 64-04
W
BAT 64
W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAT 64W
BAT 64-04W
BAT 64-05W
BAT 64-06W
63s
64s
65s
66s
Q62702-A1159
Q62702-A1160
Q62702-A1161
Q62702-A1162
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
SOT-3233 = C
3 = C1/A
2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage 40 V
V
R
Forward current
I
FmA250
120
I
FAV
Average forward current (50/60Hz, sinus)
Surge forward current (t< 100µs) 800
I
FSM
Total power dissipation BAT 64W,
T
S≤120°C
P
tot 250 mW
Total power dissipat. BAT64-04/06W,
T
S≤111°C 250
P
tot
Total power dissipation BAR 64-05W,
T
S≤104°C
P
tot 250
150 °C
T
j
Junction temperature
Storage temperature
T
st
g
-55...+150
Semiconductor Group 1 1998-11-01
BAT 64...W
Semiconductor Group Sep-07-19982
Thermal Resistance
Junction - ambient 1) BAT 64W ≤255 K/W
R
thJA
Junction - ambient 1) BAT 64-04/06W ≤290
R
thJA
Junction - ambient 1) BAT 64-05W ≤455
R
thJA
R
thJS
Junction - soldering point BAT 64W ≤120
Junction - soldering point BAT 64-04/06W
R
thJS ≤155
Junction - soldering point BAT 64-05W
R
thJS ≤185
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Electrical Characteristics at
T
A = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
max.typ.min.
DC characteristics
2-- µA
I
R
Reverse current
V
R = 30 V
200--
I
R
Reverse current
V
R = 30 V,
T
A = 85 °C
320
385
440
570
Forward voltage
I
F = 1 mA
I
F = 10 mA
I
F = 30 mA
I
F = 100 mA
-
-
-
-
V
F
350
430
520
750
mV
AC characteristics
Diode capacitance
V
R = 1 V,
f
= 1 MHz
C
T- 4 6 pF
Semiconductor Group 2 1998-11-01
BAT 64...W
Semiconductor Group Sep-07-19983
Forward current
I
F =
f
(
V
F)
T
A = Parameter
10
10
10
0 0.5 1
BAT 64... EHB00057
V
F
Ι
F
V
10
10
2
1
0
-1
-2
mA
A
T
= -40
25
85
125
C
C
C
C
Reverse current
I
R =
f
(
V
R)
T
A = Parameter
10
10
10
0102030
BAT 64... EHB00058
V
R
Ι
R
V
10
µA
10
10
A
T
= 125
85
25
2
1
0
-1
-2
-3
C
C
C
Semiconductor Group 3 1998-11-01
BAT 64...W
Semiconductor Group Sep-07-19984
Forward current
I
F =
f
(
T
A*;
T
S)
*Package mounted on epoxy
BAT 64W
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
BAT 64W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p
BAT 64W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 1998-11-01
BAT 64...W
Semiconductor Group Sep-07-19985
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAT 64-04/06W
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
BAT 64-04/06
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p
BAT 64-04/06W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 1998-11-01
BAT 64...W
Semiconductor Group Sep-07-19986
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAT 64-05W
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mA
300
I
F
T
S
T
A
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p
BAT 64-05W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS =
f
(
t
p)
BAT 64-05W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group 6 1998-11-01