Parameter Min. Typ. Max. Unit
R
q
JA Thermal Resistance, Junction to Ambient 416 °C/W
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
Prelim. 8/00
2N7000CSM
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
VGS = 0V ID= 10
m
A
VDS = VGS ID= 0.25mA
VGS = ±20VVDS = 0V
VDS = 60V VGS = 0V
TCASE = 125°C
VDS
³
2VDS(ON) VGS = 4.5V
VGS = 10V
ID= 0.5A TCASE = 125°C
VGS = 4.5V ID= 75mA
VGS = 10V ID= 0.5A
VGS = 10V ID= 0.5A
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 30V VGEN = 10V
RL= 150
W
RG= 25
W
ID= 0.2A
60 70
0.8 3.0
-10
1
1
75 5
9
0.4
2.5
100
60
25
5
10
10
V
nA
m
A
mA
mA
W
V
ms
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80
m
s ,
d£
1%
Parameter Test Conditions Min. Typ. Max. Unit