IRF7205TRPBF - International Rectifier

HEXFET® Power MOSFET

PD - 95021

lAdavanced Process Technology

lUltra Low On-Resistance

lP-Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

lDynamic dv/dt Rating

lFast Switching

lLead-Free

Description

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7205PbF

SO-8

VDSS = -30V

RDS(on) = 0.070Ω

ID = -4.6A

2/18/04

Top View

Parameter Min. Typ. Max. Units

RθJA Maximum Junction-to-Ambient    50 °C/W

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -4.6

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -3.7

IDM Pulsed Drain Current -15

PD @TC = 25°C Power Dissipation 2.5

Linear Derating Factor 0.020 W/°C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt -3.0 V/nS

TJ, TSTG Junction and Storage Temperature Range -55 to + 150

Absolute Maximum Ratings

Thermal Resistance Ratings

°C

IRF7205PbF

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -30   V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  -0.024  V/°C Reference to 25°C, ID = -1mA

  0.070 VGS = -10V, ID = -4.6A 

  0.130 VGS = -4.5V, ID = -2.0A 

VGS(th) Gate Threshold Voltage -1.0  -3.0 V VDS = VGS, ID = -250µA

gfs Forward Transconductance  6.6  S VDS = -15V, ID = -4.6A 

  -1.0 VDS = -24V, VGS = 0V

  -5.0 VDS = -15V, VGS = 0V, TJ = 70 °C

Gate-to-Source Forward Leakage   -100 VGS = -20V

Gate-to-Source Reverse Leakage   100 VGS = 20V

QgTotal Gate Charge  27 40 ID = -4.6A

Qgs Gate-to-Source Charge  5.2  nC VDS = -15V

Qgd Gate-to-Drain ("Miller") Charge  7.5  VGS = -10V 

td(on) Turn-On Delay Time  14 30 VDD = -15V

trRise Time  21 60 ID = -1.0A

td(off) Turn-Off Delay Time  97 150 RG = 6.0Ω

tfFall Time  71 100 RD = 10Ω 

Between lead,6mm(0.25in.)

from package and center

of die contact

Ciss Input Capacitance  870  VGS = 0V

Coss Output Capacitance  720  pF VDS = -10V

Crss Reverse Transfer Capacitance  220   = 1.0MHz

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage   -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V 

trr Reverse Recovery Time  70 100 ns TJ = 25°C, IF = -4.6A

Qrr Reverse RecoveryCharge  100 180 nC di/dt = 100A/µs 

ton Forward Turn-On Time

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

  -15

  -2.5

IGSS

IDSS Drain-to-Source Leakage Current

LSInternal Source Inductance  4.0 

LDInternal Drain Inductance  2.5 

µA

Ω

RDS(ON) Static Drain-to-Source On-Resistance

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 10sec.

IRF7205PbF

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

D.U.T.

90%

10%

d(on)

d(off)

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7205PbF

Fig 12b. Gate Charge Test Circuit

Fig 12a. Basic Gate Charge Waveform

QGS QGD

Charge

-10V

D.U.T. VDS

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

IRF7205PbF

Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 13. For P-Channel HEXFETS

IRF7205PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS I C

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L INE CONF OR MS T O JE DE C OU T L I NE MS -012AA.

NOT E S :

1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.

2. CONTROLLING DIME NS ION: MIL LIMETE R

3. DI ME NS IONS ARE S H OWN I N MIL L IME T E R S [I NCH E S ].

5 DIMENS ION DOES NOT INCL UDE MOLD PROT RUSIONS .

6 DIMENS ION DOES NOT INCL UDE MOLD PROT RUSIONS .

MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010].

7 DIMENS ION IS T HE LE NGT H OF L EAD FOR S OLDERING T O

A SUBS T RAT E.

MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006].

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

DAT E CODE (YWW)

XXXX

INT ERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAS T DIGIT OF T HE YE AR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: THIS IS AN IRF7101 (MOSFE T )

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

A = AS S E MB L Y S IT E CODE

IRF7205PbF

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/04