PD - 95021 IRF7205PbF Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET(R) Power MOSFET l A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = -30V RDS(on) = 0.070 ID = -4.6A Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -4.6 -3.7 -15 2.5 0.020 20 -3.0 -55 to + 150 A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. Typ. Max. 50 Units C/W 2/18/04 IRF7205PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -30 -1.0 RDS(ON) Static Drain-to-Source On-Resistance V GS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance LS Internal Source Inductance 4.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 870 720 220 V(BR)DSS IGSS Typ. Max. Units Conditions V VGS = 0V, ID = -250A -0.024 V/C Reference to 25C, ID = -1mA 0.070 VGS = -10V, I D = -4.6A 0.130 VGS = -4.5V, ID = -2.0A -3.0 V VDS = VGS, I D = -250A 6.6 S VDS = -15V, ID = -4.6A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -15V, VGS = 0V, TJ = 70 C -100 VGS = -20V nA 100 VGS = 20V 27 40 ID = -4.6A 5.2 nC VDS = -15V 7.5 VGS = -10V 14 30 VDD = -15V 21 60 ID = -1.0A ns 97 150 RG = 6.0 71 100 RD = 10 2.5 D nH pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0MHz G S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol -2.5 showing the A G integral reverse -15 p-n junction diode. S -1.2 V TJ = 25C, IS = -1.25A, VGS = 0V 70 100 ns TJ = 25C, IF = -4.6A 100 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD -4.6A, di/dt 90A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec. max. junction temperature. TJ 150C IRF7205PbF C, IRF7205PbF 12 IRF7205PbF V DS V GS RD D.U.T. RG - + V DD -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7205PbF Current Regulator Same Type as D.U.T. QG 50K 12V -10V QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 12a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7205PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS [ ISD ] IRF7205PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 8X b 0.25 [.010] A MILLIMET ERS MAX A 5 INCHES MIN MAX .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER IRF7205PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04