Document Number: 88524 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Junction Rectifier
1N5624GP thru 1N5627GP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) JEDEC registered values
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 200 V to 800 V
IFSM 125 A
IR5.0 μA
VF0.95 V
TJ max. 175 °C
DO-201AD
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 70 °C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 125 A
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at TA = 70 °C IR(AV) 200 μA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88524
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum instantaneous
forward voltage 3.0 A
TA = 25 °C
VF (1)(2) 1.0
V
TA = 70 °C 0.95
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 150 °C 300 200
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 3.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ40 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Typical thermal resistance RJA (1) 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5626GP-E3/54 1.28 54 1400 13" diameter paper tape and reel
1N5626GP-E3/73 1.28 73 1000 Ammo pack packaging
1N5626GPHE3/54 (1) 1.28 54 1400 13" diameter paper tape and reel
1N5626GPHE3/73 (1) 1.28 73 1000 Ammo pack packaging
0
250 50 75 100 125 150 175
4.0
3.0
1.0
2.0
Ambient Temperature (°C)
Average Forward Rectied Current (A)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1000
100
10
110100
Number of Cycles at 60 Hz
Average Forward Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Document Number: 88524 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
10
100
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
10040 6020080
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Reverse Voltage (V)
Junction Capacitance (pF)
100101
100
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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