TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/1 46T/147T Rev. C 1
August 2008
TIP145T/146T/147T
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T
Absolute Maximum Ratings * TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
BVCBO Collector-Base Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
BVCEO Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
BVEBO Emitter-Base Voltage - 5 V
IC Collector Curren t (DC ) - 10 A
ICP Collector Curren t (Pu lse ) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Junction Temperature Range - 65 ~ 150 °C
TO-220
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12 kΩ≅
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/1 46T/147T Rev. C 2
Electrical Characteristics * TC=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Conditions Min. Typ. Max Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145T
: TIP146T
: TIP147T
IC = - 30mA, IB = 0
- 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Current : TIP145T
: TIP146T
: TIP147T
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-off Current : TIP145T
: TIP146T
: TIP147T
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V, IC = - 5A
VCE = - 4V, IC = - 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA - 2
- 3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V
td Delay Time VCC = - 30V, IC = - 5A
IB1 = -20mA, IB2 = 20mA
RL = 6Ω
0.15 µs
tr Rise Time 0.55 µs
tstg Storage Time 2.5 µs
tf Fall Time 2.5 µs
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/1 46T/147T Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitt er Sat u ra ti o n Vo ltag e Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
IB = -2000µAIB = -1800µA
IB = -1600µA
IB = -1400µA
IB = -1200µA
IB = -1000µA
IB = -800µA
IB = -600µA
IB = -400µA
IC[A ], COLLECTOR CUR R ENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
100
1000
10000
100000 VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10 IC=-500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-10
-100
-1000 f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPACITANCE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP146T
TIP147T
TIP145T
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
PC[W], PO W E R DI SS IP A T IO N
TC[oC], CASE TEMPERATURE
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/1 46T/147T Rev. C 4
Mechanical Dimensions
TO220
TIP145T/146T/147T PNP Epitaxial Silicon Darlington TransistorTIP145T/146T/147T
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/1 46T/147T Rev. C 5
