BSS84W
Document number: DS30205 Rev. 12 - 2 1 of 5
www.diodes.com June 2012
© Diodes Incorporated
BSS84W
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS R
DS(ON) Package ID
TA = +25°C
-50V 10Ω VGS = -5V SOT323 -130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (No te 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, "Green" Molding Compound, UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Weight: 0.006 grams (approximate)
Ordering Information (Notes 3)
Part Number Case Packaging
BSS84W-7-F SOT323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
SOT-323
TOP VIEW E
q
uivalent Circuit TOP VIEW
Source
Gate
Drain
GS
D
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K84
YM
BSS84W
Document number: DS30205 Rev. 12 - 2 2 of 5
www.diodes.com June 2012
© Diodes Incorporated
BSS84W
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage (Note 4) VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 4) Continuous ID -130 mA
Pulsed Drain Current (Note 4) IDM -1 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) Pd 200 mW
Thermal Resistance, Junction to Ambient R
θ
JA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -50 -75 ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS ⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯
±
10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
-0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ 6 10 Ω VGS = -5V, ID = -0.100A
Forward Transconductance gFS .05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time tD
(
OFF
)
⎯ 18 ⎯ ns
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
BSS84W
Document number: DS30205 Rev. 12 - 2 3 of 5
www.diodes.com June 2012
© Diodes Incorporated
BSS84W
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
0
0
-600
-500
-400
-300
-200
-100
0-2-1 -5
-4
-3
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(mA)
D
V , DRA IN-SOURCE VO LTAGE ( V)
Fig . 2 Dra in-Source C ur ren t vs. D r ain-Sou r ce Volt age
DS
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4
-1 -8-7-6
-5
I, D
R
AI
N
-
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source V oltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE -SOURCE (V)
Fig . 4 On - R esistance vs. Gate- Source Volt age
GS
T= 25C
A
°
T = 125 C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 025 50 125
100
75 150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESIST A NCE ( )
DS(ON)
Ω
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN-CURRENT (A)
F ig . 6 On - Resist ance vs. Dr ain-Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
R
,
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
BSS84W
Document number: DS30205 Rev. 12 - 2 4 of 5
www.diodes.com June 2012
© Diodes Incorporated
BSS84W
Package Outline Dimensions
Suggested Pad Layout
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
A
M
JL
D
BC
H
K
G
XE
Y
C
Z
BSS84W
Document number: DS30205 Rev. 12 - 2 5 of 5
www.diodes.com June 2012
© Diodes Incorporated
BSS84W
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