BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V(BR)DSS RDS(ON) Package ID TA = +25C -50V 10 VGS = -5V SOT323 -130mA * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). e3 Weight: 0.006 grams (approximate) * * * * Applications * * * Mechanical Data General Purpose Interfacing Switch Power Management Functions Analog Switch * SOT-323 Drain D Gate G S Source TOP VIEW Ordering Information (Notes 3) Part Number BSS84W-7-F Notes: TOP VIEW Equivalent Circuit Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K84 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS84W Document number: DS30205 Rev. 12 - 2 2000 L 2001 M Mar 3 2002 N Apr 4 K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P May 5 2004 R 2005 S Jun 6 1 of 5 www.diodes.com 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D June 2012 (c) Diodes Incorporated BSS84W Maximum Ratings (@TA = 25C unless otherwise specified) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 4) Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current (Note 4) Continuous Continuous Symbol VDSS VDGR VGSS ID IDM Value -50 -50 20 -130 -1 Units V V V mA A Symbol Pd RJA Tj, TSTG Value 200 625 -55 to +150 Units mW C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage (@TA = 25C unless otherwise specified) Symbol Min Typ Max Unit Test Condition BVDSS -50 -75 -15 -60 -100 V A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (ON) gFS -0.8 .05 -1.6 6 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 5. Short duration pulse test used to minimize self-heating effect. BSS84W Document number: DS30205 Rev. 12 - 2 2 of 5 www.diodes.com June 2012 (c) Diodes Incorporated BSS84W -600 250 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) TA = 25C -500 200 -400 150 -300 100 -200 50 0 0 -100 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature -1 -2 -3 -5 -4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs.Drain-Source Voltage -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 ID , DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 -0.0 0 9 8 7 6 5 4 3 2 TA = 125C 1 0 -1 -2 -3 -5 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage TA = 25C 0 -2 -4 -5 -3 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 15 12 RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () VGS = -10V ID = -0.13A 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V VGS = -6V 10.0 5.0 VGS = -8V VGS = -10V 0 -50 0 -25 75 100 125 150 50 25 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature BSS84W Document number: DS30205 Rev. 12 - 2 3 of 5 www.diodes.com 0.0 -0.0 -0.6 -0.8 -0.4 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 1.0 June 2012 (c) Diodes Incorporated BSS84W Package Outline Dimensions A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0 8 All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C C E X BSS84W Document number: DS30205 Rev. 12 - 2 1.9 1.0 E 4 of 5 www.diodes.com June 2012 (c) Diodes Incorporated BSS84W IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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