SYHSEM! SEMICONDUCTOR P4SMA6.8A thru P4SMA220CA Surface Mount Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 220V Features @ Plastic package has Underwriters Laboratory Flammability Classification 947-0 @ Optimized for LAN protection applications @ Ideal for ESD protection of data lines in accordance with IEG 1000-4-2 (IECS01-2) @ Ideal for EFT protection of data lines in accordance with IEG 1000-4-4 (EC801-4) @ Low profile package with built-in strain relief for surface mounted applications @ Glass passivated junction @ Low incremental surge resistance, excellent clamping capability @ 400" peak pulse power capability with a 10/1000us wave- form, repetition rate (duty cycle}: 0.01% [S00V above 91V} @ Very Fastresponse time @ High temperature soldering guaranteed: 250C/10 seconds at terminals Mechanical Data @ Case: JEDEC DO-214AC molded plastic over passivated chip @ Terminals: Solder plated, solderable per MIL-S7TD-750, Method 2026 @ Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation @ Mounting Position: Any @ Weight 0.00207., 0.064g Devices for Bidirectional Applications DO-214AC (SMA) .084(1.63) 05 (127) A i 1442.65) 1 Ueeha. 40) ! 181(4.60) 7157(4.00) i 0882.25) OF 5(1, 99) | 1 0121.31) i OO, 13) t .ogg.20) i 004-10) .080(1.50) 0310.20) 20545.) 1BEN4.20) te Dimensions in inches and (millimeters) For bi-directional devices, use suffix CA (e.g. P4SMAIOCA). Electrical characteristics apply in both directions. Maximum Ratings and Characteristics (T,=26C unless othensise noted Paraneter Symbol Value Unit a power dissipation with a 1O/1000n8 wayetorrn (12) Py 400 ww Peak pulse current with a 10/1000us wavetonmn (Fig. 3) key See Next Table A Power dissipation on infinite heatsink, T,=60eS Pracane 1.0 Ww Peak fonvard sume current, 8.3mes single half sine-waye uni-directional onty @ Fem 40 A Thermal resistance junction te ambient air Phan 120 ott Thermal resistance junction to leads Pa 30 eh Operating junction and storage temperature range Tifa Pg -65 to +150 oS Notes: 1. Nor-repetitive current pulse, per Fig. 3 and derated aboveT ,=25 per Fig. 2. Rating is 300 above 81. 2, Mountedon o.2x 0.2" (6.0% 5.0mm copper pads to each terminal 3. Mounted on minimum recommended pad layout Electrical Characteristics Ratings at 26C ambient temperature unless otherwise specified. V.=3.5 atl =2654 (uni-directional only} P4SMA6.8A thru P4SMA220CA Maximum = : Biealktiown:voltage reverse Maximum Maximum Maximum Device marking Vie Test Stand-off leakage peak pulse | clamping temperature code (volis} current voltage at Vives current voltage at coefficient ; ; atl, Vises 1 1 Leng of View Device type UNI Bl Min. Max. (m} {Volts} tw} {A} , (Volts) (% fC)} P4SM Ag BA Svea Gy bC 6.45 A4 10 6.80 qoo0 361 10.5 0.057 P4 SM Ay GA FV5A FY SC FA3 7.88 40 640 600 a6.4 11.3 0.061 PASM Ad. 24 aves ayes FFG 8.61 10 7.02 200 33.1 121 0.085 P4SMAS. 14, SVIA WIG 6.66 9.66 1.0 778 50 29.9 134 0.066 P4 SA OA, 104, 10 9.50 10.5 1.9 655 10 27.6 14.5 O.0r3 P4 SM ATTA VA Wc 10.5 11.6 1.0 940 5.0 26.6 16.6 0.075 P4 SMA 24 124 120 4 12.6 1.9 qa2 1.9 24.0 1a O.0r8 P4 StAd BA 134 136 124 137 1.0 4141 1.0 22.0 18.2 0.081 Pd SmAT GA, 165A 7460 14.3 15.8 1.0 128 1.0 18.5 212 0.084 P4SMAd 6A, 164, 16G 16.2 16.8 1.0 13.6 1.0 17.8 22.6 0.086 P4 Sid oA, 184, 18c 17.4 18.9 1.0 163 1.0 76.9 26.2 0.086 P4 SM AOA 204 200 19.0 21.9 1.0 VF 1.9 144 are 0.990 PASM A224 224, 220 20.9 29.1 1.0 18.8 1.9 191 30.6 0,992 P4 SM Aad a 2d 246 22.8 26.2 1.0 20.5 1.9 12.0 33.2 0.094 Pa SAA af 276 oo 24 1.0 25.1 1.0 107 3.6 0.096 PASM AOA 30.4, 300 28.6 31.6 1.0 26.6 1.0 oF 414 0.097 P4SMASIA 334, 330 31.4 34.7 1.0 25.2 1.0 6.8 467 0.098 P4SMASGA 364, 366 S42 37.8 1.0 30.8 1.9 4.9 499 0.999 P4 SM ASBA 34 386 37.1 41.0 1.0 33.3 1.0 Fa 63.9 0.100 P4 SM Ad 3a, 434 436 409 462 1.0 346.8 1.9 a 69.3 0.1041 Pa Si AAA ATA 47 447 dod 1.0 40.2 1.0 fi2 64.6 0.104 PASM ASA b1A BIC 4656 63.6 1.0 43.6 1.0 oF Fo. o.102 P4SM ASA, 564, 56 53.2 56.8 1.0 47.8 1.0 6.2 77.0 0.103 P4 SM AgoA Gan 820 5a.9 65.1 1.0 64.0 1.9 47 86.0 0.104 P4 SM AG BA 6a, 66 64.6 714 1.0 68.1 1.9 43 92.0 0.104 P4 SM Ay oa, 7oA Foo 71.3 76.8 1.0 641 1.9 a9 1O4 0.105 P4 SM AB2A 2A 826 FF 86.1 1.0 Fo 1.9 3.6 113 0.105 PASM ATA STA sic 86.6 96.5 1.0 77.8 1.0 3.2 126 0.106 P4541 004, 1004, qooc $6.0 106 1.0 86.6 1.0 22 137 0.106 P4S0A11 04, 1104 110c 106 1146 1.9 40 1.9 2.9 162 0.107 P4 StAd 208, 1204 1200 1Vi4 126 1.0 102 1.0 1.8 146 0.107 P4 S41 304, 1304, 1300 14 VF 1.0 111 1.9 Vi 178 0.107 P4 S11 504, 1604, 7600 143 168 1.0 128 1.0 14 2uyr 0.106 P4 Sid 60,4, 1604 1600 162 168 1.0 136 1.0 1.4 219 0.108 PASM Al 704, 170A, Fac 162 179 1.0 146 1.0 13 234 0.108 P4 SA 804, 1804, 1800 71 189 1.9 164 1.9 2 246i 0.108 P4 SMA OOS, 20a, 200 190 210 1.0 171 1.0 11 2d 0.108 Pa SAS 204, 2204 22005 209 251 1.0 186 1.0 og 328 0.108 Notes: 1... mneasured after | applied for 30 dus, L=square wave pulse or equivalent PF) 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. Allterms and symbels are consistent with ANSIIEEE GA62.35 4. For bidirectional types with V_ 19 Volts and lass, the |, linrit is doubled RATINGS AND CHARACTERISTIC CURVES P4SMA6.8A thru P4SMA220CA (T, = 25C unless othensise notech Pppma Peak Pulse Power (kW) lppw Peak Pulse Current, % lasm Transient Thermal Impedance (;C/AWV) Fig. 1 Peak Pulse Power Rating Curve 100 ttt =i tf : : * Non-repetitive Pulse ty =e COO | Waveterm shown in Fig. 311] j Ta = 25C Hy PS {itty f itt poet hs 10 : Sth peed ae ihe a al AS TS | P4SMA 100A - SN itt Pasmas.ea [11 /TI] PasSma220A || PASMAQTA sete TT Tue | 4 7m +e a SHE rt r Hy =m i. Sa to +h 7 Tt + ++ op + | shen m4 . + Lt aL + ae Jf 4 SS + oh 0.2 x 0.2" (5.0 x 5.0mm). ) ht Copper Pad Areas | mh o1 Penne 1 Lol il 1 1 1 O1us 1.0u8 10ys 100us 1.0ms 10ms ty Pulse Width (sec.) Fig. 3 Pulse Waveform 150 l | | [AST tr t0us0e. Pulse Width (td) |__| is defined as the point Peak Value where the peak currant L= IpeM | decays to 50% of IpPM q T=29C 4 Halt Value IPP Ip PM 2 So | 10/1000usec. Wavetonm as defined by REA. wa td = 1 0 o 1.0 2.0 3.0 4.0 t Time (ims) Fig. 5 Typical Transient Thermal Impedance 1000 10: Seat 1 0.001 0.01 01 1 10 100 1000 tp Pulse Duration (sac) Fig. 2- Pulse Derating Curve 8 ~l wi Derating in Percentage, % 3 c 0.2 0.2" (5.0% 5.0mm) Copper Pad Areas ph uw Peak Pulse Power (Pre) or Current (Ipem) 0 25. 50 75 100 #125 #150 4175 200 Ta Ambient Temperature ( C) Fig. 4 Typical Junction Capacitance -_ 0,000: Fa 17,=25C_ x - +} Ee bts 40MHz ~ a tt tt Vsig = SOMVP-p 8 TT. |Measuredat | 8 +000 ~ Stand-Off _ oo {_e Vo M 3 a se t t t+ ++ & ft 1 tii _s~ Uni-Directional ce +} 14 NS 2 400 ; 3 Bi Directional FS | fr = , , wt 10 100 200 Vier) Breakdown Voltage (V) Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Ty = Ty max. 8.ams Single Hall Sine-Wave (JEDEC Method) = lrsw Peak Forward Surge Current (A) 8 [ + ~ 4 t tea t 8 + TH + + = 5 10 50 =: 100 Number of Cyclas at 60 Hz _