(INTERSIL FEATURES * Tds (on) < 5 ohms Excellent Switching ton < 4ns toff < 6 ns Low Cutoff Current Ipcotf) < 200 pA ABSOLUTE MAXIMUM RATINGS @25C (unless otherwise noted) Maximum Temperatures Storage Temperature -66C to +200C Operating Junction Temperature +200C Lead Temperature (Soldering, 10 sec time limit) +260C Maximum Power Dissipation 2N5432-2N5434 N-Channel JFET ac PIN CHIP CONFIGURATION TOPOGRAPHY TO 52 50 D 0935 onze * 0036 0026 18 0250 0700 NOTE SUBSTRATE ( GATE a. ra a a ce. rn 0035 , 0035 $s 0025 * 0026 ORDERING INFORMATION Device Dissipation @ Free Air Temperature 300 mW . . on TO-52 WAFER DICE Linear Derating 2.3 mW/'C = . . 2N5432_ | 2N5432/W_{ 2N5432/D Maximum Voltages & Current V Gate to Source Voltage 95 V 2N5433_| 2N5433/W_| 2N5433/D GS - 434 | 2NS434/Ww | 2N5434/D Vegp Gate to Drain Voltage -25 V 2N5 N f 5434/ !G Gate Current 100 mA Ip Drain Current 400 mA ELECTRICAL CHARACTERISTICS (25C unless otherwise specified) 2N5432 2N5433 2N5434_ Ni CHARACTERISTIC MIN MAX | MIN MAX | MIN MAX UNIT TEST CONDITIONS =200 -200 -200 [pA _- : i: \Gss Gate Reverse Current 300 300 "300 nA Vas =-15 Vv, Vps =90 150C BVGSS Gate Source Breakdown Voltage -25 -25 -25 Vv Ig =-1HA, Vps=0 200 200 200 | pA _ __ : ID (oft) Drain Cutoff Current 200 300 00 nA Vos. =5V, VGs=-10V 750C VGS(off} Gate-Source Cutotf Voltage 4 ~-10 -3 -9 -1 -4 Vv Vos=5V, tp =3nA Saturation Drain Current - _ Ipss (Note 1) 150 100 30 mA | Vpsi= 15 V, VGs=0 TOS(on) Static Drain-Source ON Resistance 2 5 7 10 ohm = = VDS(on) Drain-Source ON Voltage 50. 70 100 mV Vag = 0. 1p = 10 ma Tds(on) Drain-Source ON Resistance 5 7 10 | ohm | Vgs.=90,1p 70 =1 kHz Ciss Common-Source input Capacitance 30 30 30 x = =e f= Crss Common Source Reverse Transfer 15 15 15 pF Vos. = 0, Vas =-10V 1 MHz Capacitance td Turn-ON Delay Time 4 4 4 Vop = 1.5 V, tr Rise Time 1 1 1 ns VGSlon) = 9, toff - Turn-OFF Delay Time 6 6 6 VGSloff) = -12 Vv. tf Fall Time 30 30 30 IDion) = 10 MA NOTE: 1. Pulse test required pulsewidth 300 ys, duty cycle < 3%. Yoo py, < YOD-VosicNn) be TpiON) o vin vouT Rg $ 502 INPUT PULSE RAISE TIME 0.25 ns FALL TIME 0.75 PULSE WIDTH 200 ns PULSE RATE 550 pps 1-80 SAMPLING SCOPE RISE TIME 0.4 ns INPUT RESISTANCE 10M INPUT CAPACITANCE 15 pF