TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP42 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP41 Collector-base voltage (IE = 0) TIP41A V CBO TIP41C TIP41 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current TIP41A TIP41B TIP41C UNIT 80 E T E L O S B O TIP41B VALUE VCEO VEBO IC 100 120 V 140 40 60 80 100 V 5 V 6 A Peak collector current (see Note 1) ICM 10 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W 1/2LIC2 62.5 mJ Continuous base current Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB Ptot 3 2 Tj -65 to +150 TL 250 Tstg -65 to +150 A W C C C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.52 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = 20 V. DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP41 40 TIP41A 60 TIP41B 80 TIP41C 100 TYP MAX UNIT V VCE = 80 V VBE = 0 TIP41 0.4 Collector-emitter VCE = 100 V VBE = 0 TIP41A 0.4 cut-off current VCE = 120 V VBE = 0 TIP41B 0.4 VCE = 140 V VBE = 0 TIP41C 0.4 Collector cut-off VCE = 30 V IB = 0 TIP41/41A 0.7 current VCE = 60 V IB = 0 TIP41B/41C 0.7 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.3 A transfer ratio VCE = 4V IC = 3A 0.6 A IC = 6A (see Notes 5 and 6) 1.5 V 4V IC = 6A (see Notes 5 and 6) 2 V Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = 1 mA mA mA 30 (see Notes 5 and 6) 15 E T E L O S B O VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 75 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.92 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time VBE(off) = -4 V RL = 5 tp = 20 s, dc 2% 0.6 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCS633AD hFE - DC Current Gain VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 1*0 0*01 0*1 TCS633AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1*0 0*1 E T E L O S B O 1*0 0*01 0*001 10 IC - Collector Current - A 0*01 0*1 1*0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*2 TCS633AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 1*1 1*0 0*9 0*8 0*7 0*6 0*1 1*0 10 IC - Collector Current - A Figure 3. DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP41, TIP41A, TIP41B, TIP41C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AB tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 TIP41 TIP41A TIP41B TIP41C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.