2N6052-D - ON Semiconductor - Datasheet.Directory

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low frequency

switching applications.

•High DC Current Gain —

hFE = 3500 (Typ) @ IC = 5.0 Adc

•Collector–Emitter Sustaining Voltage — @ 100 mA

VCEO(sus) = 80 Vdc (Min) — 2N6058

100 Vdc (Min) — 2N6052, 2N6059

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Symbol

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2N6058

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2N6052

2N6059

ÎÎÎ

Î

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

12

20

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎÎÎÎ

0.2

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@TC = 25C

Derate above 25C

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

150

0.857

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

–65 to +200C

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Rating

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.17

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

160

00 25 50 75 100 125 150 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

120

100

140

175

80

40

20

60

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 2 1Publication Order Number:

2N6052/D

2N6052

2N6058

2N6059

*ON Semiconductor Preferred Device

DARLINGTON

12 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

150 WATTS

*

CASE 1–07

TO–204AA

(TO–3)

PNP

NPN

2N6052

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (2)

(IC = 100 mAdc, IB = 0) 2N6058

2N6052, 2N6059

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6058

(VCE = 50 Vdc, IB = 0) 2N6052, 2N6059

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

5.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 6.0 Adc, VCE = 3.0 Vdc)

(IC = 12 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

750

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

18,000

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 24 mAdc)

(IC = 12 Adc, IB = 120 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 12 Adc, IB = 120 mAdc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

—

ÎÎÎÎ

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 6.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.8

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common Emitter Small–Signal Short Circuit Forward

Current Transfer Ratio

(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

|hfe|

ÎÎÎ

Î

ÎÎÎ

4.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N6052

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6058/2N6059

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

500

300

ÎÎÎ

Î

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hfe

ÎÎÎ

Î

ÎÎÎ

300

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

*Indicates JEDEC Registered Data.

(2) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

Figure 2. Switching Times Test Circuit

10

0.2

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

5.0

0.1

0.5 1.0 3.0 20

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

1.0

2.0

2N6052

2N6059

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+8.0 V

V1

approx

-8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 µs

0

RB

51 D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 5.0 k ≈ 50

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

0.5

0.2

5.0 10

For NPN test circuit reverse diode and voltage polarities.

2N6052

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3

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RθJC(t) = r(t) RθJC

RθJC = 1.17°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE

PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.03 0.3 3.0 30 300

ACTIVE–REGION SAFE OPERATING AREA

Figure 5. 2N6058

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. 2N6052, 2N6059

VCE, COLLECTOR-EMITTER VOLTAGE

(VOLTS)

50

10

20

10

5.0

2.0

0.05 50 10070

IC, COLLECTOR CURRENT (AMP)

1.0

0.5

0.1

0.2

20 30

50

10

20

10

5.0

2.0

0.05 50 10070

IC, COLLECTOR CURRENT (AMP)

1.0

0.5

0.1

0.2

20 30

TJ = 200°C

SECOND BREAKDOWN LIM

ITED

0.1 ms

0.5 ms

1.0 ms

5.0 ms

d

c

0.1 ms

0.5 ms

TJ = 200°C

1.0 ms

5.0 ms

d

c

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5, 6, and 7 is based on TJ(pk) = 200C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

 200C; TJ(pk) may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

2N6052

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500

0.1

Figure 7. Small–Signal Current Gain

VR, REVERSE VOLTAGE (VOLTS)

50

1.0 2.0 1005.00.2 0.5

C, CAPACITANCE (pF)

300

100

70

TJ = 25°C

Cib

200

Cob

3000

1.0

Figure 8. Capacitance

f, FREQUENCY (kHz)

30 2.0 5.0 20 50 100010010 10 20 50

hfe, SMALL-SIGNAL CURRENT GAIN

2000

1000

500

200

100

50

200 500

2N6052

2N6058/2N6059

TC = 25°C

VCE = 3.0 V

IC = 5.0 A

2N6052

2N6058/2N6059

2N6052

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5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20,000

0.2

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.3 0.5 1.0 2.0 20

hFE, DC CURRENT GAIN

10

PNP

2N6052 NPN

2N6058, 2N6059

Figure 10. Collector Saturation Region

3.0

0.5

IB, BASE CURRENT (mA)

1.0 1.0 2.0 10 50

1.8

IC = 3.0 A

TJ = 25°C

6.0 A

2.2

2.6

5.0

3.0

0.2

IC, COLLECTOR CURRENT (AMP)

0.3 0.5 1.0 3.0 20

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. “On” Voltages

VBE @ VCE = 3.0 V

2.0

10,000

TJ = 150°C

25°C

-55°C

20

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 150°C

25°C

-55°C

1.4

9.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

V, VOLTAGE (VOLTS)

VBE @ VCE = 3.0 V

5000

3000

2000

1000

500

300

3.0 5.0

VCE = 3.0 V

40,000

0.2

400 0.3 0.5 1.0 2.0 2010

20,000

10,000

6,000

4,000

2,000

1,000

600

3.0 5.0

3.0

1.0

1.8

2.2

2.6

1.4

105.0

3.0

0.2 0.3 0.5 1.0 3.0 20

2.5

2.0

1.5

1.0

0.5 2.0 105.0

30

12 A

IC = 3.0 A 6.0 A 9.0 A 12 A

0.5 1.0 2.0 10 505.0 203.0 30

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

2N6052

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N6052

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Notes

2N6052

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8

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