AS7C4098A February 2006 (R) 5.0 V 256 K x 16 CMOS SRAM Features * Pin compatible with AS7C4098 * Industrial and commercial temperature * Organization: 262,144 words x 16 bits * Center power and ground pins * High speed * Easy memory expansion with CE, OE inputs * TTL- and CMOS-compatible, three-state I/O * 44-pin JEDEC standard packages - 400-mil SOJ - TSOP 2 * ESD protection 2000 volts * Latch-up current 200 mA - 10/12/15/20 ns address access time - 5/6 ns output enable access time * Low power consumption: ACTIVE - 990mW/max @ 10 ns * Low power consumption: STANDBY - 55mW/max CMOS * Individual byte read/write controls I/O buffer WE UB OE LB CE Pin arrangement for SOJ and TSOP 2 44-pin (400 mil) SOJ TSOP2 VCC 1024 x 256 x 16 Array (4,194,304) A0 A1 A2 A3 A4 CE I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 GND Control circuit Column decoder A5 A9 A10 A11 A14 A15 A16 A17 A0 A1 A2 A3 A4 A6 A7 A8 A12 A13 I/O1-I/O8 I/O9-I/O16 Row Decoder Logic block diagram 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 Selection guide -10 -12 -15 -20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 5 6 6 6 ns Maximum operating current 180 160 140 120 mA Maximum CMOS standby current 10 10 10 10 mA 2/21/06, v 1.2 Alliance Semiconductor P. 1 of 11 Copyright (c) Alliance Semiconductor. All rights reserved. AS7C4098A (R) Functional description The AS7C4098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/ O1-I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1-I/O8, and UB controls the higher bits, I/O9-I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 5.0V (AS7C4098A) supply. The device is available in the JEDEC standard 400-mL, 44-pin SOJ, TSOP 2 packages. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on VCC relative to GND Vt1 -0.50 +7.0 V Voltage on any pin relative to GND Vt2 -0.50 VCC +0.50 V Power dissipation PD - 1.5 W Storage temperature (plastic) Tstg -65 +150 C Ambient temperature with VCC applied Tbias -55 +125 C DC current into outputs (low) IOUT - 20 mA Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O1-I/O8 I/O9-I/O16 Mode H X X X X High Z High Z Standby (ISB, ISB1) L H H X X L X X H H High Z High Z Output disable (ICC) L H DOUT High Z L H L H L High Z DOUT L L DOUT DOUT L H DIN High Z H L High Z DIN L L DIN DIN L L X Read (ICC) Write (ICC) Key: X = Don't care, L = Low, H = High. 2/21/06, v 1.2 Alliance Semiconductor P. 2 of 11 AS7C4098A (R) Recommended operating conditions Parameter Symbol Min Typical Max Unit VCC (10/12/15/20) 4.5 5.0 5.5 V VIH* VIL** 2.2 - VCC + 0.5 V -0.5 - 0.8 V commercial TA 0 - 70 C industrial TA -40 - 85 C Supply voltage Input voltage Ambient operating temperature * VIH max = VCC + 1.5V for pulse width less than 5 nS. **V min = -1.0V for pulse width less than 5 nS. IL DC operating characteristics (over the operating range)1 -10 Parameter Symbol Input leakage current Test conditions -12 -15 -20 Min Max Min Max Min Max Min Max Unit Notes |ILI| VCC = Max VIN = GND to VCC - 1 - 1 - 1 - 1 A Output leakage current |ILO| VCC = Max CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC - 1 - 1 - 1 - 1 A Operating power supply current ICC VCC = Max CE < VIL, f = fmax, IOUT = 0 mA - 180 - 160 - 140 - 120 mA ISB VCC = Max CE > VIH, f = Max - 60 - 55 - 50 - 45 mA ISB1 VCC = Max CE VCC - 0.2V, VIN VCC - 0.2V or VIN 0.2V, f = 0 - 10 - 10 - 10 - 10 mA IOL = 6 mA, VCC = Min - 0.4 - 0.4 - 0.4 - 0.4 IOL = 8 mA, VCC = Min - 0.5 - 0.5 - 0.5 - 0.5 IOH = -4 mA, VCC = Min 2.4 - 2.4 - 2.4 - 2.4 - Standby power supply current VOL Output voltage VOH V 4 V 4 Capacitance (f = 1MHz, Ta = 25 C, VCC = NOMINAL)4 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE, WE, OE, UB, LB VIN = 0V 6 pF I/O capacitance CI/O I/O VIN = VOUT = 0V 8 pF 2/21/06, v 1.2 Alliance Semiconductor P. 3 of 11 AS7C4098A (R) Read cycle (over the operating range)2,8 -10 Parameter -12 -15 -20 Symbol Min Max Min Max Min Max Min Max Unit Notes Read cycle time tRC 10 - 12 - 15 - 20 - ns Address access time tAA - 10 - 12 - 15 - 20 ns Chip enable (CE) access time tACE - 10 - 12 - 15 - 20 ns Output enable (OE) access time tOE - 5 - 6 - 6 - 6 ns Output hold from address change tOH 3 - 3 - 3 - 3 - ns 4 CE Low to output in low Z tCLZ 3 - 3 - 3 - 3 - ns 3, 4 CE High to output in high Z tCHZ - 5 - 6 - 7 - 9 ns 3, 4 OE Low to output in low Z tOLZ 0 - 0 - 0 - 0 - ns 3, 4 OE High to output in high Z tOHZ - 5 - 6 - 7 - 9 ns 3, 4 LB, UB access time tBA - 5 - 6 - 7 - 8 ns LB, UB Low to output in low Z tBLZ 0 - 0 - 0 - 0 - ns LB, UB High to output in high Z tBHZ - 5 - 6 - 7 - 9 ns Power up time tPU 0 - 0 - 0 - 0 - ns 4 Power down time tPD - 10 - 12 - 15 - 20 ns 4 Key to switching waveforms Rising input Falling input Undefined/don't care Read waveform 1 (address controlled)5,6,8 tRC Address tOH DataOUT 2/21/06, v 1.2 tAA Previous data valid tOH Data valid Alliance Semiconductor P. 4 of 11 AS7C4098A (R) Read waveform 2 (CE, OE, UB, LB controlled)5,7,8 tRC Address tAA OE tOHZ tOE tOLZ tOH CE tACE tCLZ tCHZ LB, UB tBA tBLZ tBHZ DataOUT Data valid Write cycle (over the operating range)9 -10 Parameter Symbol Min -12 -15 -20 Max Min Max Min Max Min Max Unit Note Write cycle time tWC 10 - 12 - 15 - 20 - ns Chip enable (CE) to write end tCW 7 - 8 - 10 - 12 - ns Address setup to write end tAW 7 - 8 - 10 - 12 - ns Address setup time tAS 0 - 0 - 0 - 0 - ns Write pulse width (OE = High) tWP1 7 - 8 - 10 - 12 - ns Write pulse width (OE = Low) tWP2 10 - 12 - 15 - 20 - ns Write recovery time tWR 0 - 0 - 0 - 0 - ns Address hold from end of write tAH 0 - 0 - 0 - 0 - ns Data valid to write end tDW 5 - 6 7 - 9 - ns Data hold time tDH 0 - 0 - 0 - 0 - ns 3, 4 Write enable to output in High-Z tWZ 2 5 2 6 2 7 2 9 ns 3, 4 Output active from write end tOW 3 - 3 - 3 - 3 - ns 3, 4 Byte enable Low to write end tBW 7 - 8 - 10 - 12 - ns 3, 4 2/21/06, v 1.2 Alliance Semiconductor P. 5 of 11 AS7C4098A (R) Write waveform 1(WE controlled)9 tWC tAH tWR Address tCW CE tBW LB, UB tAS tAW tWP WE tDW DataIN Data valid tWZ DataOUT tDH tOW Data undefined High Z Write waveform 2 (CE controlled)9 tWC tAH tWR Address tAS CE tCW tAW tBW LB, UB WE tWP tDW Data valid DataIN 2/21/06, v 1.2 tDH Alliance Semiconductor P. 6 of 11 AS7C4098A (R) Write waveform 3 9 tWC tAH tWR Address tAS tCW CE tAW tBW LB, UB tWP WE tDW DataIN Data valid tDH tWZ DataOUT High Z Data undefined High Z AC test conditions - Output load: see Figure B. Input pulse level: GND to VCC - 0.5V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V. VCC - 0.5V GND 90% 90% 10% 10% 2 ns Figure A: Input pulse DOUT 255 +5.0V 480 Thevenin equivalent: C10 GND Figure B:5.0V Output load 168 DOUT +1.728V Notes 1 2 3 4 5 6 7 8 9 10 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured 500mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. All write cycle timings are referenced from the last valid address to the first transitioning address. C = 30 pF, except on High Z and Low Z parameters, where C = 5 pF. 2/21/06, v 1.2 Alliance Semiconductor P. 7 of 11 AS7C4098A (R) Package dimensions c 44 434241403938373635343332313029282726252423 e He 44-pin TSOP 2 1 2 3 4 5 6 7 8 9 101112131415161718 19202122 d A2 A A1 l 0-5 E b e E1E2 Pin 1 c B A A1 2/21/06, v 1.2 A A1 A2 B b c D E E1 E2 e 44-pin SOJ 400 mils Min(mils) Max(mils) 0.128 0.148 0.025 0.105 0.115 0.026 0.032 0.015 0.020 0.007 0.013 1.120 1.130 0.370 NOM 0.395 0.405 0.435 0.445 0.050 NOM D 44-pin SOJ b A A1 A2 b c d e He E l 44-pin TSOP 2 Min (mm) Max (mm) 1.2 0.05 0.15 0.95 1.05 0.30 0.45 0.21 0.12 18.31 18.52 10.06 10.26 11.68 11.94 0.80 (typical) 0.40 0.60 Seating Plane A2 E Alliance Semiconductor P. 8 of 11 AS7C4098A (R) Ordering Codes Package SOJ TSOP 2 Version 10 ns 12 ns 15 ns 20 ns 5.0V commercial AS7C4098A-10JC AS7C4098A-12JC AS7C4098A-15JC AS7C4098A-20JC 5.0V industrial AS7C4098A-10JI AS7C4098A-12JI AS7C4098A-15JI AS7C4098A-20JI 5.0V commercial AS7C4098A-10TC AS7C4098A-12TC AS7C4098A-15TC AS7C4098A-20TC 5.0V industrial AS7C4098A-12TI AS7C4098A-15TI AS7C4098A-20TI AS7C4098A-10TI Note: Add suffix `N' to the above part numbers for Lead Free Parts. (EX: AS7C4098A - 10TCN) Part numbering system AS7C SRAM prefix 2/21/06, v 1.2 4098A -XX Device Access number time J or T X X Packages: J: SOJ 400 mil T: TSOP 2 Temperature ranges: C: Commercial, 0C to 70C I: Industrial, -40C to 85C N = Lead Free Parts Alliance Semiconductor P. 9 of 11 AS7C4098A (R) Revision History Rev. No. v1.0 v1.1 v1.2 History Initial release 11/08/04 Included ICC, ISB & ISB1 parameters Corrected the following: TOE, VIH, VOL & tWZ Removed the title "PRELIMINARY INFORMATION" 2/21/06, v 1.2 Revised Date Alliance Semiconductor 05/27/05 02/21/06 P. 10 of 11 (R) AS7C4098A (R) Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 Copyright (c) Alliance Semiconductor All Rights Reserved Part Number: AS7C4098A Document Version: v 1.2 www.alsc.com (c) Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. 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