DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC846T; BC847T series NPN general purpose transistors Product specification Supersedes data of 1999 Apr 26 2000 Nov 15 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series FEATURES PINNING * Low current (max. 100 mA) PIN * Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * General purpose switching and amplification, especially in portable equipment. DESCRIPTION NPN general purpose transistor in an SC-75 (SOT416) plastic package. PNP complements: BC856T; BC857T series. handbook, halfpage 3 3 1 MARKING 1 TYPE NUMBER Top view MARKING CODE BC846AT 1A BC846BT 1B BC847AT 1E BC847BT 1F BC847CT 1G 2 2 Fig.1 MAM348 Simplified outline (SC-75; SOT416) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC846AT; BC846BT - 80 V BC847AT; BC847BT; BC847CT - 50 V BC846AT; BC846BT - 65 V BC847AT; BC847BT; BC847CT - 45 V - 5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation - 150 mW open collector Tamb 25 C; note 1 Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 833 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MAX. UNIT - - 15 nA - - 5 A - - 100 nA BC846AT; BC847AT 110 - 220 BC846BT; BC847BT 200 - 450 emitter cut-off current VEB = 5 V; IC = 0 hFE DC current gain VCE = 5 V; IC = 2 mA 420 - 800 IC = 10 mA; IB = 0.5 mA; - - 200 mV IC = 100 mA; IB = 5 mA; note 1 - - 400 mV BC847CT VBE TYP. VCB = 30 V; IE = 0; Tj = 150 C collector-base cut-off current VCB = 30 V; IE = 0 IEBO VCEsat MIN. collector-emitter saturation voltage base-emitter voltage IC = 2 mA; VCE = 5 V 580 - 700 mV IC = 10 mA; VCE = 5 V - - 770 mV Cc collector capacitance VCB = 10 V; f = 1 MHz; IE = ie = 0 - - 1.5 pF Ce emitter capacitance VEB = 0.5 V; f = 1 MHz; IC = ic = 0 - 11 - pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 - - MHz F noise figure VCE = 5 V; IC = 200 A; RS = 2 k; f = 1 kHz; B = 200 Hz - - 10 dB Note 1. Pulse test: tp 300 s; 0.02. 2000 Nov 15 3 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series GRAPHICAL INFORMATION BC847AT MGT723 400 MGT724 1200 BE (mV) 1000 handbook, halfpage handbook, halfpage V hFE (1) 300 (1) 800 (2) (2) 200 600 (3) 400 (3) 100 200 0 10-1 1 10 102 0 10-1 103 1 10 I C (mA) 102 103 I C (mA) VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.3 Fig.2 DC current gain; typical values. MGT725 103 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. MGT726 1200 VBEsat (mV) 1000 handbook, halfpage VCEsat (mV) (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 10-1 1 10 102 0 10-1 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 1 10 102 103 I C (mA) I C (mA) 4 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series GRAPHICAL INFORMATION BC847BT MGT727 600 MGT728 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE (1) 500 (1) 400 800 (2) (2) 300 600 200 400 (3) 100 0 10-1 1 10 (3) 200 102 0 10-2 103 10-1 1 10 I C (mA) 102 103 I C (mA) VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (3) Tamb = 150 C. Fig.7 Fig.6 DC current gain; typical values. MGT729 104 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. VCEsat (mV) 1200 VBEsat (mV) 1000 103 800 MGT730 handbook, halfpage (1) (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10-1 1 10 102 0 10-1 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 1 10 102 103 I C (mA) I C (mA) 5 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series GRAPHICAL INFORMATION BC847CT MGT731 1200 MGT732 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE 1000 (1) 800 (1) 800 (2) (2) 600 400 600 (3) 400 (3) 200 200 0 10-1 1 10 102 0 10-2 103 10-1 1 10 I C (mA) 102 103 I C (mA) VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (3) Tamb = 150 C. Fig.11 Base-emitter voltage as a function of collector current; typical values. Fig.10 DC current gain; typical values. MGT733 104 handbook, halfpage VCEsat (mV) 1200 BEsat (mV) 1000 103 800 MGT734 handbook, halfpage V (1) (2) 600 (3) 102 400 (1) 200 (3) (2) 10 10-1 1 10 102 0 10-1 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. 10 102 103 IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. 2000 Nov 15 1 I C (mA) I C (mA) Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 6 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2000 Nov 15 REFERENCES IEC JEDEC EIAJ SC-75 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Nov 15 8 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series NOTES 2000 Nov 15 9 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series NOTES 2000 Nov 15 10 Philips Semiconductors Product specification NPN general purpose transistors BC846T; BC847T series NOTES 2000 Nov 15 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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