BC847ATTR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 26 2000 Nov 15

DISCRETE SEMICONDUCTORS

BC846T; BC847T series

NPN general purpose transistors

M3D173

2000 Nov 15 2

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switching and amplification, especially

in portable equipment.

DESCRIPTION

NPN general purpose transistor in an SC-75 (SOT416)

plastic package.

PNP complements: BC856T; BC857T series.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BC846AT 1A

BC846BT 1B

BC847AT 1E

BC847BT 1F

BC847CT 1G

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM348

Top view

Fig.1 Simplified outline (SC-75; SOT416) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC846AT; BC846BT −80 V

BC847AT; BC847BT; BC847CT −50 V

VCEO collector-emitter voltage open base

BC846AT; BC846BT −65 V

BC847AT; BC847BT; BC847CT −45 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −150 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2000 Nov 15 3

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 833 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =30V; I

E=0 −−15 nA

VCB =30V; I

E= 0; Tj= 150 °C−−5µA

EBO emitter cut-off current VEB =5V; I

C=0 −−100 nA

hFE DC current gain VCE =5V; I

C=2mA

BC846AT; BC847AT 110 −220

BC846BT; BC847BT 200 −450

BC847CT 420 −800

VCEsat collector-emitter saturation

voltage IC= 10 mA; IB= 0.5 mA; −−200 mV

IC= 100 mA; IB= 5 mA; note 1 −−400 mV

VBE base-emitter voltage IC= 2 mA; VCE = 5 V 580 −700 mV

IC= 10 mA; VCE =5V −−770 mV

Cccollector capacitance VCB = 10 V; f = 1 MHz; IE=i

e=0 −−1.5 pF

Ceemitter capacitance VEB = 0.5 V; f = 1 MHz; IC=i

c=0 −11 −pF

fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

F noise ﬁgure VCE =5V; I

C= 200 µA; RS=2kΩ;

f = 1 kHz; B = 200 Hz −−10 dB

2000 Nov 15 4

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

GRAPHICAL INFORMATION BC847AT

handbook, halfpage

MGT723

10−111010

2103

IC (mA)

400

300

200

100

hFE

(1)

(2)

(3)

Fig.2 DC current gain; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT724

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

103

102

MGT725

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT726

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Nov 15 5

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

GRAPHICAL INFORMATION BC847BT

handbook, halfpage

MGT727

10−111010

2103

IC (mA)

600

500

400

300

200

100

hFE (1)

(2)

(3)

Fig.6 DC current gain; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

1200

1000

800

600

400

200

MGT728

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

104

103

102

MGT729

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT730

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Nov 15 6

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

GRAPHICAL INFORMATION BC847CT

handbook, halfpage

MGT731

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

hFE

(1)

(2)

(3)

Fig.10 DC current gain; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

1200

1000

800

600

400

200

MGT732

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

104

103

102

MGT733

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT734

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Nov 15 7

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

PACKAGE OUTLINE

UNIT A1

max bpcDEe

pQw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1 0.30

0.15 0.25

0.10 1.8

1.4 0.9

0.7 0.5

11.75

1.45 0.2

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT416 SC-75

detail X

EAB

vMA

0 0.5 1 mm

scale

0.95

0.60

Plastic surface mounted package; 3 leads SOT416

97-02-28

2000 Nov 15 8

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Nov 15 9

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

NOTES

2000 Nov 15 10

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

NOTES

2000 Nov 15 11

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846T; BC847T series

NOTES

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Internet: http://www.semiconductors.philips.com

2000 70

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Printed in The Netherlands 613514/03/pp12 Date of release: 2000 Nov 15 Document order number: 9397 750 07524