MMBT5401-G (PNP)
RoHS Device
General Purpose Transistor
QW-BTR18 Page 1
REV:B
Features
-Epitaxial planar die construction.
-Complementary NPN type available (MMBT5551-G).
-Ideal for medium power amplification and switching.
Diagram:
Dimensions in inches and (millimeter)
1
Base
2
Emitter
Collector
3
Parameter Value Unit
Maximum Ratings (at TA=25°C unless otherwise noted)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector dissipation
Junction and storage temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-160
-150
-5
-0.6
0.3
-55 ~ +150
V
V
V
A
W
OC
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.008(0.20) min
Symbol
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCB=-120V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-10mA, f=30MHz
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
-160
-150
-5
80
100
50
100
V
-0.1
-0.1
200
-0.5
-1
V
V
V
μA
μA
V
V
Mhz
Marking: 2L
Comchip Technology CO., LTD.
Symbol
RATING AND CHARACTERISTIC CURVES (MMBT5401-G)
Page 2
QW-BTR18
Fig.1 Max Power Dissipation vs.
Ambient Temperature
0
PD, Power Dissipation (mW)
Ta, Ambient Temperature (°C)
0 75 175
Fig.2 Collector Emitter Saturation Voltage
vs. Collector Current
0.01
VCE(sat), Collector to Emitter
Saturation Voltage (V)
IC, Collector Current (mA)
1 100
Fig.3 DC Current Gain vs. Collector Current
1
hFE, DC Current Gain (Normalized)
IC, Collector Current (mA)
1
10
10000
100
50 100
0.1
125
50
250
400
10
10
Fig.4 Base Emitter Voltage vs. Collector Current
0.1
VBE(ON), Base Emitter Voltage (V)
IC, Collector Current (mA)
0.1 1.0
0.5
1.0
10 100
10 1000
1000
25 150
100
150
200
300
350
1000
1.0
100
General Purpose Transistor
O
Ta=150 C
O
Ta=25 C
O
Ta=-50 C
O
Ta=150 C
O
Ta=25 C
O
Ta=-50 C
VCE=5V VCE=5V
O
Ta=150 C
O
Ta=25 C
O
Ta=-50 C
Fig.5 Gain Bandwidth Product vs. Collector Current
1
fT, Gain Bandwidth Product (Mhz)
IC, Collector Current (mA)
10
10
100
1000
1 100
VCE=10V
REV:B
Comchip Technology CO., LTD.
BCdD D2
D1
E F P P0P1
SOT-23
SYMBOL
A
W W1
(mm)
(inch) 0.122 0.004±0.112 0.004±0.055 0.004±0.061 0.004±7.008 0.04±1.969 MIN. 0.512 0.008±
SOT-23
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.002±0.315 0.012
±0.567 MAX.
3.10 ± 0.10 2.85 ± 0.10
4.00 ± 0.10
1.55 ± 0.10
3.50 ± 0.051.75 ± 0.10
50.0 MIN. 13.0 ± 0.201.40 ± 0.10
4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX.
178 ± 1
Page 3
QW-BTR18
General Purpose Transistor
REV:B
Comchip Technology CO., LTD.
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Part Number
MMBT5401-G
Marking Code
2L
Marking Code
2L
3
1 2
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
Page 4
QW-BTR18
General Purpose Transistor
REV:B
Comchip Technology CO., LTD.
A
C
B
D
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
