VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES * Low profile, axial leaded outline * Very low forward voltage drop Cathode Anode * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance C-16 * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY * Designed and qualified for commercial level Package DO-201AD (C-16) IF(AV) 3A VR 40 V VF at IF 0.49 V IRM max. 20 mA at 125 C TJ max. 150 C Diode variation Single die EAS 6.0 mJ * Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-MBR340... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 3.0 A 40 V IFSM tp = 5 s sine 430 A VF 3 Apk, TJ = 25 C 0.6 V - 40 to 150 C TJ VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage VS-MBR340 VS-MBR340-M3 UNITS 40 40 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1 A, L = 12 mH 6.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current Revision: 19-Sep-11 50 % duty cycle at TC = 92 C, rectangular waveform 3.0 5 s sine or 3 s rect. pulse 430 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 80 Document Number: 93449 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1.0 A VFM (1) TJ = 25 C Typical junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) 0.6 9.4 A 0.85 1.0 A 0.37 TJ = 125 C 3.0 A Maximum reverse leakage current See fig. 2 9.4 A 0.72 TJ = 25 C 0.6 TJ = 100 C VR = Rated VR 8 20 CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C 190 LS Measured lead to lead 5 mm from package body Rated VR V 0.49 TJ = 125 C dV/dt UNITS 0.5 3.0 A Maximum forward voltage drop See fig. 1 VALUES mA pF 9.0 nH 10 000 V/s VALUES UNITS - 40 to 150 C 28 C/W Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style C-16 1.2 g 0.042 oz. MBR340 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package Revision: 19-Sep-11 Document Number: 93449 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR340, VS-MBR340-M3 Vishay Semiconductors 100 Allowable Lead Temperature (C) IF - Instantaneous Forward Current (A) www.vishay.com 10 1 TJ = 150 C TJ = 125 C TJ = 25 C 170 150 130 110 90 0 0.2 0.4 0.6 0.8 1 1.2 Square wave (D = 0.50) 80 % Rated VR applied 50 see note (1) 0 1.4 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 2 3 4 5 IF(AV) - Average Forward Current (A) 93449_05 Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current 100 2.5 TJ = 150 C 10 Average Power Loss (W) IR - Reverse Current (mA) 70 30 0.1 93449_01 TJ = 125 C 1 0.1 0.01 TJ = 25 C 2 1.5 0 10 20 30 1 0.5 0 40 VR - Reverse Voltage (V) 93449_02 0 100 10 0 93449_03 40 80 120 160 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage IFSM - Non-Repetitive Surge Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage T = 25 C 1 2 3 4 5 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics 9449_05 1000 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC RMS Limit 0.001 CT - Junction Capacitance (pF) DC 1000 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 10 93449_06 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 19-Sep-11 Document Number: 93449 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE VS- MBR Device code 1 2 3 40 TR -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating: 3 = 3 A 4 - Voltage rating: 40 = 40 V 5 - TR = Tape and reel package None = Bulk package 6 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-MBR340 500 500 PACKAGING DESCRIPTION Bulk VS-MBR340TR 1200 1200 Tape and reel VS-MBR340-M3 500 500 Bulk VS-MBR340TR-M3 1200 1200 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95242 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 19-Sep-11 Document Number: 93449 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-201AD (C-16) DIMENSIONS in millimeters (inches) O 5.8 (0.23) MAX. Cathode band 21.0 (0.83) MIN. (2 places) 10.0 (0.39) MAX. 21.0 (0.83) MIN. (2 places) 10.0 (0.39) MAX. O 1.40 (0.055) O 1.20 (0.047) (2 places) 2.54 (0.100) MAX. Flash (2 places) O 1.40 (0.055) O 1.20 (0.047) (2 places) O 5.8 (0.23) MAX. Revision: 29-Aug-11 Document Number: 95242 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000