BSP322P
SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C A
TC=70 °C
Pulsed drain current
ID,pulse TC=25 °C
Avalanche energy, single pulse
EAS ID=-1 A, RGS=25 WmJ
Gate source voltage
VGS V
Power dissipation
Ptot TC=25 °C W
Operating and storage temperature
Tj, Tstg °C
ESD Class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1
0.8
1.8
Value
57
4
55/150/56
-55 ... 150
±20
260 °C
1A (250V to 500V)
VDS
-100
V
RDS(on),max
800
mW
ID
-1
A
Product Summary
PG-SOT-223
Type
Package
Tape and Reel Information
Marking
Lead free
Packing
BSP322P
PG-SOT-223
H6327: 1000 pcs/reel
BSP322P
Yes
Non dry
Rev 1.05 page 1 2012-11-28
BSP322P
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA
minimal footprint,
steady state
- - 115 K/W
6 cm2 cooling area1),
steady state
- - 70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=-250 mA-100 - - V
Gate threshold voltage
VGS(th) VDS=VGS,ID=-380 µA -2.0 -1.5 -1.0
Zero gate voltage drain current
IDSS
VDS=-100 V, VGS=0 V,
Tj=25 °C
- -0.1 -1 µA
VDS=-100 V, VGS=0 V,
Tj=150 °C
- -10 -100
Gate-source leakage current
IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance
RDS(on) VGS=-10 V, ID=-1 A -600 800 mW
VGS=-4.5 V,
ID=-0.93 A
-808 1000
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=-0.8 A
0.7 1.4 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev 1.05 page 2 2012-11-28
BSP322P
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -280 372 pF
Output capacitance
Coss -70 94
Reverse transfer capacitance
Crss -34 51
Turn-on delay time
td(on) -4.6 6.9 ns
Rise time
tr-4.3 6.5
Turn-off delay time
td(off) -21.2 31.8
Fall time
tf-8.3 12.5
Gate Charge Characteristics2)
Gate to source charge
Qgs -0.8 1.0 nC
Gate to drain charge
Qgd -4.3 6.4
Gate charge total
Qg-12.4 16.5
Gate plateau voltage
Vplateau -2.9 - V
Reverse Diode
Diode continuous forward current IS- - -1.0 A
Diode pulse current
IS,pulse - - -4.0
Diode forward voltage
VSD
VGS=0 V, IF=-1 A,
Tj=25 °C
-0.84 1.2 V
Reverse recovery time
trr -47 -ns
Reverse recovery charge
Qrr -84 -nC
2) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=-25 V,
f=1 MHz
VDD=-50 V, VGS=-
10 V, ID=-1 A,
RG=6 W
VDD=-80 V, ID=-1 A,
VGS=0 to -10 V
VR=50 V, IF=|IS|,
diF/dt=100 A/µs
Rev 1.05 page 3 2012-11-28
BSP322P
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); |VGS|≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
100 µs
1 ms
10 ms
100 ms
DC
100
101
102
103
10-2
10-1
100
101
-ID [A]
-VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
102
10-1
100
101
102
ZthJS [K/W]
tp [s]
0
0.5
1
1.5
2
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.2
0.4
0.6
0.8
1
1.2
0 40 80 120 160
-ID [A]
TA [°C]
Rev 1.05 page 4 2012-11-28
BSP322P
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-3 V
-3.5 V
-4 V
-5 V
-7 V
-10 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 1 2 3 4
RDS(on) [W]
-ID [A]
25 °C
125 °C
0
1
2
3
4
0 1 2 3 4 5
-ID [A]
-VGS [V]
0
1
2
3
0 1 2 3 4
gfs [S]
-ID [A]
-3 V
-3.5 V
-4 V
-5 V
-7 V
-10 V
0
1
2
3
4
0 2 4 6 8 10
-ID [A]
-VDS [V]
Rev 1.05 page 5 2012-11-28
BSP322P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-1 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-380 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
0.5
1
1.5
2
-60 -20 20 60 100 140
RDS(on) [W]
Tj [°C]
Ciss
Coss
Crss
101
102
103
0 20 40 60 80 100
C [pF]
-VDS [V]
typ.
min.
max.
0
1
2
3
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj [°C]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.01
0.1
1
10
0 0.5 1 1.5
IF [A]
-VSD [V]
Rev 1.05 page 6 2012-11-28
BSP322P
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=-1 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
70
75
80
85
90
95
100
105
110
115
120
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
0.1
1
10
1 10 100 1000
-IAV [A]
tAV [µs]
20 V
50 V
80 V
0
2
4
6
8
10
12
0 5 10 15
-VGS [V]
-Qgate [nC]
Rev 1.05 page 7 2012-11-28
BSP322P
Package Outline: PG-SOT-223
Footprint: Packaging:
Dimensions in mm
Rev 1.05 page 8 2012-11-28
BSP322P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 1.05 page 9 2012-11-28
