Si photodiode array
S4111/S4114 series
16, 35, 46 element Si photodiode array for UV
to NIR
www.hamamatsu.com 1
Multichannel spectrophotometers
Color analyzers
Light spectrum analyzers
Light position detection
Large active area
Low cross-talk
S4111 series: Enhanced infrared sensitivity,
low dark current
S4114 series: IR sensitivity suppressed type,
low terminal capacitance,
high-speed response
General ratings / Absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Features Applications
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode ar-
rays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from
UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, S4111/S4114 se-
ries are able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal pu-
rity. Special fi lters can be attached as the input window (custom order products).
Type No Window
material
Package
Active area
(per 1 element)
Between
elements
measure
Between
elements
pitch
Number
of
elements
Absolute maximum ratings
Reverse
voltage
VR max
Operating
temperature
Topr
Storage
temperature
Tstg
(mm)
Size
(mm)
Effective area
(mm2) (mm) (mm) (V) (°C) (°C)
S4111-16R Resin potting 18 pin DIP
1.45 × 0.9
1.305
0.1 1.0
16
15 -20 to +60 -20 to +80
S4111-16Q
Quartz
S4111-35Q 40 pin DIP
4.4 × 0.9
3.96
35
S4111-46Q 48 pin DIP 46
S4114-35Q 40 pin DIP 35
S4114-46Q 48 pin DIP 46
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Type No.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo sensitivity
S
Dark
current
ID
Max.
Shunt
resistance
Rsh
VR=10 mV
Terminal
capacitance
Ct
Rise time
tr
RL=1 kΩ
λ=655 nm
NEP
λ=λp
λp
200 nm 633 nm
VR=10 mV
VR=10 V
Min
(GΩ)
Typ.
(GΩ)
VR=0 V
VR=10 V
VR=0 V
VR=10 V
VR=0 V
VR=10 V
(nm) (nm) (A/W) (A/W) (A/W) (pA) (pA) (pF) (pF) (μs) (μs)
(W/Hz1/2) (W/Hz1/2)
S4111-16R
340 to 1100
960 0.58
- 0.39 5 25 2.0 250 200 50 0.5 0.1
4.4 × 10
-16
1.7 × 10
-15
S4111-16Q
190 to 1100
0.08 0.43
S4111-35Q
0.08 0.43
10 50 1.0 30 550 120 1.2 0.3
1.3 × 10
-15
3.1 × 10
-15
S4111-46Q
S4114-35Q
190 to 1000
800 0.50 60 300 0.15 2 35 20 0.1 0.05
5.7 × 10
-15
8.0 × 10
-15
S4114-46Q
Si photodiode array S4111/S4114 series
2
Spectral response
Dark current vs. reverse voltage
Photo sensitivity temperature characteristics
Terminal capacitance vs. reverse voltage
Wavelength (nm)
Photo sensitivity (A/W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
190 400 600 800 1000 1200
(Typ. Ta=25 °C)
S4114 SERIES
S4111-16Q/-35Q/-46Q
S4111-16R
0.01 0.1 1 10 100
100 fA
10 fA
1 pA
10 pA
100 pA
Reverse voltage (V)
Dark current
S4114-35Q/-46Q
S4111-35Q/-46Q
S4111-16Q/-16R
(Typ. Ta=25 °C)
+1.4
+1.2
+1.0
+0.8
+0.6
+0.4
+0.2
-0.2
0
190 1100
Wavelength (nm)
800 1000600
400
Temperature coefficient (%/°C)
(Typ.)
S4111 SERIES
S4114 SERIES
0.1 1 10 100
10 pF
100 pF
1 nF
Reverse voltage (V)
Terminal capacitance
S4111-16Q/-16R
S4114-35Q/-46Q
S4111-35Q/-46Q
(Typ. Ta=25 °C)
KMPDB0112EB
KMPDB0114EA
KMPDB0113EA
KMPDB0115EA
Si photodiode array S4111/S4114 series
Example of cross-talk
Dimensional outline (unit: mm)
S4111 series
S4111-16Q
S4114 series
S4111-16R
1
10
Relative sensitivity (%)
Light position on active area (500 µm/div.)
(Ta=25 °C, λ=655 mm, VR=0 V)
0.1
100
22.86 ± 0.3
18.8
Index mark
7.87 ± 0.3
7.49 ± 0.2
1234567
7.62 ± 0.3
0.5 ± 0.2
6.5
Photosensitive
surface
98
18 17 16 15 14 13 12 1011
0.25
Active area
15.9
ch 1 ch 16
1.45
P 2.54 × 8 = 20.32
22.0
2.2 ± 0.3
0.5
2.54
(4.5)
0.46
Quartz window
0.9 ± 0.3
Photosensitive
surface
22.86 ± 0.3
18.8
Active area
15.9
Index mark
1.45
7.87 ± 0.3
7.49 ± 0.2
123456789
18 17 16 15 14 13 12 11 10
7.62 ± 0.3
0.5 ± 0.2
Photosensitive
surface
0.25
ch 1 ch 16
P 2.54 × 8 = 20.32
2.2 ± 0.3
2.54
(4.5)
0.46
0.9 ± 0.3
Photosensitive
surface
Resin
100
10
1
0.1
Relative sensitivity (%)
Light position on active area (500 µm/div.)
(Ta=25 °C, λ=655 mm, VR=0 V)
KMPDB0015EA
KMPDA0135EBKMPDA0136EB
KMPDB0018EB
3
Si photodiode array S4111/S4114 series
Details of elements (for all types)
S4111-35Q, S4114-35Q S4111-46Q, S4114-46Q
S4111-35Q 1.45
aType No.
S4114-35Q 1.35
ch 1
4.4
Active area
34.9
50.8 ± 0.6
15.5 ± 0.3
212239
2
1
20
19
ch 35
40
15.11 ± 0.25
Pin no.
15.24 ± 0.25*
a
0.25
Photosensitive
surface
P 2.54 × 19 = 48.26
2.8 ± 0.3
2.54
0.46
(4.5)
Photosensitive
surface
Quartz
window
a
b cc
S4111-16Q/16R 1.45 0.9 0.1
abc
4.4 0.9 0.1
S4111-35Q/46Q
S4114-35Q/46Q
S4111-46Q 1.65
aType No.
S4114-46Q 1.55
ch 1
4.4
Active area
45.9
65.0 ± 0.8
15.11 ± 0.25
ch 46
15.5 ± 0.3
252647
2
1
24
23
48
15.24 ± 0.25*
a
0.25
Photosensitive
surface
3.0 ± 0.3
P 2.54 × 23 = 58.42
2.54
0.46
(4.5)
Photosensitive
surface
Quartz
window
Index mark
KMPDA0019ED
KMPDA0112EA
KMPDA0021ED
4
Si photodiode array S4111/S4114 series
Pin No. 16-element
type
35-element
type
46-element
type
1KCKCKC
2222
3444
4666
5888
6101010
7121212
8141414
9161616
10 KC 18 18
11 15 NC 20
12 13 20 22
13 11 22 24
14 9 24 26
15 7 26 28
16 5 28 30
17 3 30 32
18 1 32 34
19 34 36
20 NC 38
21 KC 40
22 35 42
23 33 44
24 31 46
25 29 KC
26 27 45
27 25 43
28 23 41
29 21 39
30 19 37
31 17 35
32 15 33
33 13 31
34 11 29
35 9 27
36 7 25
37 5 23
38 3 21
39 1 19
40 NC 17
41 15
42 13
43 11
44 9
45 7
46 5
47 3
48 1
Pin connections Operating circuits
In the most generally used circuit, operational amplifiers are
con-nected to each channel to read the output in real time. The
output of an operational amplifi er is of low impedance and thus
can be easily multiplexed.
In the charge storage readout method, the charge stored in the
junction capacitance of each channel, which is proportional to
the incident light intensity, can be read out in sequence by a
multiplexer. With this method, reverse voltage must be applied
to the photodiodes, so S4111 and S4114 series are suitable.
One amplifi er is suffi cient but care should be taken regarding
noise, dynamic range, etc.
PHOTODIODE ARRAY MULTIPLEXER
PHOTODIODE ARRAY
ADDRESS
MULTIPLEXER
BIAS
KMPDC0001EA
KMPDC0002EA
HAMAMATSU also provides the C9004 driver circuit for Si photodiode arrays, that allows direct mounting of the S4111-16Q/R
on the circuit board.
5
Cat. No. KMPD1002E07 Oct. 2011 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of October, 2011.
Si photodiode array S4111/S4114 series
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