fAMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Veeoius)= 40V(Min)- TIP33, TIP34 60V(Min)- TIP33A,TIP34A 80V(Min)- TIP338,TIP34B 100V(Min)- TIP33C,TIP34C * DC Current Gain hFE=40(Min)@I,= 1.0A * Current Gain-Bandwidth Product f,=3.0 MHz (Min)@ |,=0.5A MAXIMUM RATINGS NPN TIP33 TIP33A TIP33B TIP33C PNP TIP34 TIP34A TIP34B TIP34C 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 80 WATTS Characteristic Symbol| TIP33 | TIP33A | TIP33B | TIP33C | Unit TIP34 | TIP34A | TIP34B | TIP34C Collector-Emitter Voltage Veeo 40 60 80 100 Vv Collector-Base Voltage Vego 40 60 80 100 V Emitter-Base Voltage Veso 5.0 Vv Collector Current - Continuous le 10 A - Peak 15 Base Current ls 3.0 A Total Power Dissipation@T, = 25C Pp 80 Ww Derate above 25C 0.64 wrc Operating and Storage Junction Ty. Tst C Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rojec 1.56 C/W FIGURE -1 POWER DERATING ch Pp , POWER DISSIPATION(WATTS) o3 8 88SB8AS SB oO 25 50 6 Tc , TEMPERATURE(C) 100 125 150 PrP ao Je x |, 12a| FP Ai. Ln PIN 1.BASE 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 22.38 B 45.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 { 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 1850 | 21.50 M 4.68 5.36 N 2.40 2.80 oO 3.25 3.65 P 0.55 0.70TIP33, TIP33A, TIP33B, TIP33C NPN / TIP34, TIP34A, TIP34B, TIP34C PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symboi Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) TIP33,TIP34 Veeoisus) 40 Vv (I= 30 mA, I,= 9 ) TIP33A,TIP34A 60 TIP33B,TIP34B 80 TIP33C, TIP34C 100 Collector Cutoff Current lee mA (Vog= 30 V, p= 0) TIP33,TIP34, TIP33A,TIP34A 0.7 (Vog= 60 V, I= 0) TIP33B,T!P34B,TIP33C,TIP34C 0.7 ;Collector Cutoff Current lces mA (Ve_= 40 V, V.,= 0) TIP33,TIP34 0.4 (V._= 60 V, V_,= 0) TIP33A,TIP34A 0.4 (Veg= 80 V, Veg= 0) TIP338,TIP34B 0.4 (V.,= 100 V, V,,= 0) TIP33C,TIP34C 0.4 Emitter Cutoff Current lEBo mA (Vep 5.0 V, 1,= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Voge = 4.0 V, Ip = 1.0 A) 40 (Veg = 4.0 V, I, = 3.0 A) 20 100 Collector-Emitter Saturation Voltage Vee(sat) V (lh =3.0A, I, =0.3A) 1.0 (lp =10A, 1, =2.5A) 4.0 Base-Emitter On Voltage Veg on) Vv (Ip =3.0 A, Vog= 4.0 V) 1.6 (ig =10 A,Veg= 4.0 V) 3.0 i DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) f; MHz (lg =O.5A, Vee = 10V, fregy = 1 MHZ) 3.0 Small Signal Current Gain Ne (1g =O.5A, Veg = 10V, f= 1 kHz) 20 (1) Pulse Test: Puise width = 300 ps , Duty Cycle = 2.0% {2) f, =| he} frestTiIP33, TIP33A, T!P33B, TIP33C NPN / TIP34,TIP34A, TIP34B,TIP34C PNP A FIG-2 ACTIVE- REGION SAFE OPERATING AREA FORWARD BIAS There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-2 is base on T.=25 C:Tupg is variable depending on power level.Second breakdown pulse limi -ts a are valid for duty cycles to 10% but must be derated =when Ten T,225C, second breakdown limitations do not derate the ~ Thermally Limt same as thermal limitations. F=2FC(Sinde Puse} Ic , COLLECTOR CURRENT (Amp} 1 2 5 10 20 50 100 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) FIG-3 REVERSE BIAS SAFE OPERATING AREA REVERSE BIAS For inductive loads,high voltage and high current must be sustained simultaneously during turn-off,in most cases with the base-to-emifter junction reverse biased under these conditions the collector voltage must be held to 187 a safe level at or below a specfic value of coliector iS current.This can be accomplished by several mean such as active clamping, RC snubbing, load line shaping, etc. the L=200 H Icha25 safe level for these devices is specified as Reverse Bias 10 | Voeionp te 50 Safe Operating Area and represents the voltage-current t Tectoee condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the Tip33__| TIP33A_| TIP33B_ | TIP33C device is never subjected to an avalanche mode. FIG-3 THP34 TIP34A TIP348 TIP34C | gives the RBSOA characteristics. /| | 5.0) Ic, COLLECTOR CURRENT(AMP) Q 20 40 60 80 100 Vee, COLLECTOR-EMITTERVOLTAGE(VOLTS) FIG-4DC CURRENT GAIN 500 Voe=4.0V l t 200 Ty=25 C 100 50 20 bre , DC CURRENT GAIN 10 G1 02 03 0.5 1.0 20 3.0 5.0 10 lc , COLLECTOR CURRENT (AMP)