2N2904AL and 2N2905AL Qualified Levels: JAN, JANTX, JANTXV and JANS PNP SWITCHING SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904AL and 2N2905AL switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-39 package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surfacemount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N2904 through 2N2905 series. * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. TO-5 Package (See part nomenclature for all available options.) * RoHS compliant versions available (commercial grade only). Also available in: TO-39 (TO-205AD) package (long-leaded) 2N2904 & 2N2905A APPLICATIONS / BENEFITS * * General purpose transistors for high speed switching applications. Military and other high-reliability applications. MAXIMUM RATINGS Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Thermal Resistance Junction-to-Ambient RJA 195 o Thermal Resistance Junction-to-Case RJC 50 o IC 600 mA PT 0.8 3.0 W TJ and Tstg -65 to +200 C Collector Current Total Power Dissipation (1) @ TA = +25 C @ TC = +25 C (2) Operating & Storage Junction Temperature Range Notes: 1. For derating, see figures 1 and 2. 2. For thermal impedance, see figures 3 and 4. C/W C/W MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0186-1, Rev. 1 (121219) (c)2012 Microsemi Corporation Page 1 of 7 2N2904AL and 2N2905AL MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead plate or RoHS compliant matte/tin (commercial grade only) over nickel. MARKING: Part number, date code, manufacturer's ID. POLARITY: PNP (see package outline). WEIGHT: Approximately 1.14 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2904 A L (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Electrical Parameter Modifier Symbol Cobo ICEO ICEX IEBO hFE VCEO VCBO VEBO Long Leaded SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0186-1, Rev. 1 (121219) (c)2012 Microsemi Corporation Page 2 of 7 2N2904AL and 2N2905AL ELECTRICAL CHARACTERISTICS @ TA = +25 C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mA Symbol Min. V(BR)CEO 60 Max. Unit V Collector-Emitter Cutoff Voltage VCE = 60 V ICES 1.0 A Collector-Base Cutoff Current VCB = 60 V All Types ICBO1 10 A VCB = 50 V 2N2904AL, 2N2905AL ICBO2 10 nA VCB = 50 V @ TA = +150 C 2N2904AL, 2N2905AL ICBO3 10 A Collector-Base Cutoff Current VCB = 50 V ICBO 10 nA 10 A 50 10 nA A VCB = 60 V Emitter-Base Cutoff Current VEB = 3.5 V VEB = 5.0 V IEBO ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 0.1 mA, VCE = 10 V 2N2904AL 2N2905AL 40 75 IC = 1.0 mA, VCE = 10 V 2N2904AL 2N2905AL 40 100 IC = 10 mA, VCE = 10 V 2N2904AL 2N2905AL IC = 150 mA, VCE = 10 V 2N2904AL 2N2905AL 40 100 IC = 500 mA, VCE = 10 V 2N2904AL 2N2905AL 40 50 hFE 175 450 40 100 120 300 Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCE(sat) 0.4 1.6 V Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBE(sat) 1.3 2.6 V (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. T4-LDS-0186-1, Rev. 1 (121219) (c)2012 Microsemi Corporation Page 3 of 7 2N2904AL and 2N2905AL ELECTRICAL CHARACTERISTICS @ TA = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mA, VCE = 20 V, f = 100 MHz Output Capacitance VCB = 10 V, IE = 0, 100 kHz f 1.0MHz Iutput Capacitance VEB = 2.0 V, IC = 0, 100 kHz f 1.0MHz Symbol Min. Max. hfe 100 |hfe| 2.0 Cobo 8.0 Cibo 30 Unit pF pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-On Time t Turn-Off Time t T4-LDS-0186-1, Rev. 1 (121219) Max. Unit on 45 ns off 300 ns (c)2012 Microsemi Corporation Min. Page 4 of 7 2N2904AL and 2N2905AL DC Operation Maximum Rating (W) GRAPHS Ta (C) (Ambient) DC Operation Maximum Rating (W) FIGURE 1 Derating (RJA) PCB Tc (C) (Case) FIGURE 2 Derating (RJA) PCB T4-LDS-0186-1, Rev. 1 (121219) (c)2012 Microsemi Corporation Page 5 of 7 2N2904AL and 2N2905AL Theta (oC/W) GRAPHS (continued) Time (s) FIGURE 3 Theta (oC /W) Thermal impedance graph (RJA) Time (s) FIGURE 4 Thermal impedance graph (RJA) T4-LDS-0186-1, Rev. 1 (121219) (c)2012 Microsemi Corporation Page 6 of 7 2N2904AL and 2N2905AL PACKAGE DIMENSIONS CD CH HD LC Dimensions Millimeters Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 9.40 0.200 TP 5.08 TP LD 0.016 0.021 0.41 0.53 7, 8 LL LU 0.500 0.016 0.750 0.019 12.70 0.41 19.05 0.48 7, 8, 12 7, 8 1.27 7, 8 Symbol Inch L1 0.050 L2 0.250 6.35 P Q TL TW r 0.100 2.54 0.050 0.029 0.045 0.028 0.034 0.010 45 TP 1.27 0.74 1.14 0.71 0.86 0.25 45 TP Note 6 7, 8 5 4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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