T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 1 of 7
2N2904AL and 2N2905AL
Available on
commercial
versions
PNP SWITCHING SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/290
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This family of 2N2904AL and 2N2905AL switching transistors are m i li tary qualified up t o the
JANS level for high-reliabilit y applications. These devices are also av ai l abl e i n a TO-39
package. Microse m i al so offers numerous other transistor products to meet higher and low er
power ratings with various switching speed requir em ents in both through-hole and surface-
mount packages.
TO-5 Package
Also available in :
TO-39 (TO-205AD)
package
(long-leaded)
2N2904 & 2N2905A
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N2904 through 2N2905 series.
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290.
(See part nomenc lature for al l av ai lable opti ons.)
• RoHS compliant versions av ailable (commercial grade o nly).
APPLICATIONS / BENEFITS
• General purpose transistors for high speed s witching applications.
• Military and ot her high-reliability applic ations.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689 -0803
MSC – Ireland
Gort Road Busi nes s Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 60 V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltag e
V
EBO
5.0
V
Thermal Resistance Juncti on-to-Ambient
R
ӨJA
195
oC/W
Thermal Resistance Juncti on-to-Case RӨJC 50
o
C/W
Collector Current
I
C
600
mA
Total Po wer Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C (2) PT 0.8
3.0 W
Operating & Storage Juncti on Temperature Range
T
J
and T
stg
-65 to +200
°C
Notes: 1. For derating, see figur es 1 and 2.
2. For thermal impedance, see figures 3 and 4.
T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 2 of 7
2N2904AL and 2N2905AL
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Tin/lead plate or RoHS compl i ant matte/tin (commercial grade o nly) over nickel.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: PNP (see package outline) .
• WEIGHT: Approximately 1.14 grams.
• See Package Dimensions on last page.
PART NOMENCL AT URE
JAN 2N2904 A L (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type n umber
(see Electric al C har act erist ics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Long Leaded
Electrical Parameter Modifier
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cuto ff current, base open.
ICEX
Collector cuto ff current, circ ui t between base a nd em i tter.
IEBO
Emitter cutoff current, collector open.
hFE
Common-emit ter static forward cu rrent transfer rat i o.
VCEO
Collector-emitter volt age, base open.
VCBO
Collector-emitter volt age, emitter open.
VEBO
Emitter-base voltage, colle ct or open.
T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 3 of 7
2N2904AL and 2N2905AL
ELECTRICAL CHARACT ERISTICS @ TA = +25 °C, unless otherwise not ed
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
V(BR)CEO
V
I
C
= 10 mA
60
Collector-Emitter Cutoff Voltage
V
CE
= 60 V
I
CES
1.0
µA
Collector-Base Cutoff Current
V
CB
= 60 V
All Types
I
CBO1
10
µA
V
CB
= 50 V
2N2904AL, 2N2905A L
I
CBO2
10
nA
V
CB
= 50 V @ T
A
= +150 ºC
2N2904AL, 2N2905A L
I
CBO3
10
µA
Collector-Base Cutoff Current
VCB = 50 V
ICBO
10
nA
VCB = 60 V 10 µA
Emitter-Base Cutoff Current
VEB = 3.5 V
V
EB
= 5.0 V IEBO
50
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current T ransfer Rati o
hFE
I
C
= 0.1 mA, V
CE
= 10 V
2N2904AL
2N2905AL
40
75
I
C
= 1.0 mA, V
CE
= 10 V
2N2904AL
2N2905AL
40
100
175
450
I
C
= 10 mA, V
CE
= 10 V
2N2904AL
2N2905AL
40
100
I
C
= 150 mA, V
CE
= 10 V
2N2904AL
2N2905AL
40
100
120
300
I
C
= 500 mA, V
CE
= 10 V
2N2904AL
2N2905AL
40
50
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
Base-Emitter Saturation Voltage
VBE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 4 of 7
2N2904AL and 2N2905AL
ELECTRICAL CHARACT ERISTICS @ TA = +25 °C, unless otherwise not ed (continued)
DYNAMIC CHA RACTERISTI CS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz
hfe
100
Small-Signal Short-Circuit Forward-Current
Transfer Ratio |hfe| 2.0
I
C
= 50 mA, V
CE
= 20 V, f = 100 MHz
Output Capacit ance
Cobo
pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
8.0
Iutput Capacitance
Cibo
pF
VEB = 2.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
30
SWITCHING CH A RACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time ton 45 ns
Turn-Off Time toff 300 ns
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2N2904AL and 2N2905AL
GRAPHS
Ta (°C) (Ambient )
FIGURE 1
Derating (RθJA) PCB
Tc (ºC) (Case)
FIGURE 2
Derating (RθJA) PCB
DC Operation Maxim um Rating (W)
DC Operation Maxim um Rating (W)
T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 6 of 7
2N2904AL and 2N2905AL
GRAPHS (continued)
Time (s)
FIGURE 3
Thermal impedance graph (RθJA)
Time (s)
FIGURE 4
Thermal impedan ce graph (RθJA)
Theta (oC/W)
Theta (oC /W)
T4-LDS-0186-1, Rev. 1 (121219) ©2012 Microsemi Corporation Page 7 of 7
2N2904AL and 2N2905AL
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimet ers are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a m ini mum length of . 011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body conto ur optional withi n zone defined by HD, CD, and Q.
6. Leads at gau ge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radi us of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD ap pli es between L2 an d LL m inimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three l eads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) app lies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. For “L” suffix d evices, dimension LL is 1.50 (38.1 0 mm) minimum, 1.75 (44.45 mm) maximum.
13. Lead 1 = emitter , lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD 0.016 0.021 0.41 0.53 7, 8
LL
0.500
0.750
12.70
19.05
7, 8, 12
LU
0.016
0.019
0.41
0.48
7, 8
L1 0.050 1.27 7, 8
L2 0.250 6.35 7, 8
P
0.100
2.54
Q
0.050
1.27
5
TL
0.029
0.045
0.74
1.14
4
TW
0.028
0.034
0.71
0.86
3
r
0.010
0.25
10
α 45° TP 45° TP 6