©2000 Fairchild Semiconductor International
FQP7N20L
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A2, December 2000
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.6mH, IAS = 6.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA200 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.17 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA
VDS = 160 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 3.25 A
VGS = 5 V, I D = 3.25 A -- 0.59
0.62 0.75
0.78 Ω
gFS Forward Transconductance VDS = 30 V, ID = 3.25 A -- 6.3 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 390 500 pF
Coss Output Capacitance -- 55 70 pF
Crss Reverse Transfer Capacitance -- 8.5 11 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100 V, ID = 6.5 A,
RG = 25 Ω
-- 12 35 ns
trTurn-On Rise Time -- 125 260 ns
td(off) Turn-Off De l a y Time -- 20 50 ns
tfTurn -Off Fa ll Time -- 65 140 n s
QgTotal Gate Ch arge VDS = 160 V, ID = 6.5 A,
VGS = 5 V
-- 6.8 9.0 nC
Qgs Gate-Source Charge -- 1.6 -- nC
Qgd Gate-Drain Charge -- 3.4 -- nC
Drain-Source Di ode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 26 A
VSD Drain-Source Diode Forward V oltage VGS = 0 V, I S = 6.5 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 6.5 A,
dIF / dt = 100 A/µs
-- 110 -- ns
Qrr Reverse Recovery Charge -- 0.44 -- µC