
6-164
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05L,
RFD16N05LSM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 50 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 50 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 16
45 A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
0.48 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250mA, VGS = 0V, Figure 10 50 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250mA, Figure 9 1 - 2 V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V
TC = 150oC-- 1 µA
--50µA
Gate to Source Leakage Current IGSS VGS =±10V, VDS = 0V - - 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 16A, VGS = 5V - - 0.047 Ω
ID = 16A, VGS = 4V - - 0.056 Ω
Turn-On Time t(ON) VDD = 25V, ID = 8A,
VGS = 5V, RGS = 12.5Ω
Figures 15, 16
- - 60 ns
Turn-On Delay Time td(ON) -14 - ns
Rise Time tr-30 - ns
Turn-Off Delay Time td(OFF) -42 - ns
Fall Time tf-14 - ns
Turn-Off Time t(OFF) - - 100 ns
Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 40V,
ID = 16A,
RL = 2.5Ω
Figures 17, 18
- - 80 nC
Gate Charge at 5V Qg(5) VGS = 0V to 5V - - 45 nC
Threshold Gate Charge Qg(TH) VGS = 0V to 1V - - 3 nC
Thermal Resistance Junction to Case RθJC - - 2.083 oC/W
Thermal Resistance Junction to Ambient RθJA - - 100 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 16A - - 1.5 V
Diode Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/µs - - 125 ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
RFD16N05L, RFD16N05LSM